Abstract: Due to the high energy, narrow distribution and breaking the bandgap limitation, plasmon induced hot electrons has been widely applied to extend the photoresponse spectra of the semiconductor, such as realizing the response spectrum of wideband semiconductor and silicon to visible and near-infrared range, respectively. Besides, the response spectrum can be adjusted by changing the plasmonic nanostructures, which has an important advantage for realizing silicon-based near-infrared photodectection.Firstly, the concept and mechanism of surface plasmon and plasmon enhanced internal photoemission were introduced. Then, the recent progress on near infrared hot electron photodetector based on silicon was summarized. The influence of the shape, size, distribution of plasmonic nanostructure on the generation and transportation of hot electrons were also summarized. Finally the challenges and potential future directions of surface plasmon enhanced near-infrared photodetector based on metal/Si Schottky heterojunction were discussed.