王立晶, 赵柏秦, 杨仕轩. 大电流窄脉冲激光器驱动芯片设计[J]. 红外与激光工程, 2021, 50(11): 20210034. DOI: 10.3788/IRLA20210034
引用本文: 王立晶, 赵柏秦, 杨仕轩. 大电流窄脉冲激光器驱动芯片设计[J]. 红外与激光工程, 2021, 50(11): 20210034. DOI: 10.3788/IRLA20210034
Wang Lijing, Zhao Baiqin, Yang Shixuan. Design of high current narrow pulse laser driving chip[J]. Infrared and Laser Engineering, 2021, 50(11): 20210034. DOI: 10.3788/IRLA20210034
Citation: Wang Lijing, Zhao Baiqin, Yang Shixuan. Design of high current narrow pulse laser driving chip[J]. Infrared and Laser Engineering, 2021, 50(11): 20210034. DOI: 10.3788/IRLA20210034

大电流窄脉冲激光器驱动芯片设计

Design of high current narrow pulse laser driving chip

  • 摘要: 脉冲式半导体激光器的出光质量直接影响探测精度。针对激光探测系统小型化的需求,设计一款面积小、集成度高的激光器驱动芯片。该芯片使用新型3D堆叠式封装技术将栅极驱动管芯与功率场效应晶体管管芯集成,并在中间添加双面覆铜陶瓷基板实现两管芯互连。该封装形式既提高了芯片的散热能力,又增强了过流能力。首先对激光探测发射模块现状进行详细介绍,引出了激光器驱动芯片的设计思路与方法,并给出了具体的封装设计流程。对栅极驱动电路与版图进行设计,使用0.25 μm BCD工艺制造栅极驱动芯片。在完成激光器驱动芯片封装后,搭建外围电路进行测试,使该芯片驱动860 nm激光器,芯片供电电压为12 V时,输入电平为3.3 V、频率为10 kHz的PWM信号,芯片输出脉冲宽度为180 ns的窄脉冲,其上升、下降时间小于30 ns,峰值电流高达15 A,可以使激光器正常出光,满足探测需求。芯片具有超小面积,约为5 mm×5 mm,解决了传统激光器驱动电路采用多芯片模块造成探测系统内部空间拥挤的问题,为小型化提供新思路。

     

    Abstract: The light quality of the pulsed semiconductor laser directly affects the detection accuracy. Aiming at the miniaturization requirement of laser detection system, a laser driving chip with small area and high integration was designed. The chip integrated the gate driving die and the power field effect transistor die using 3D stacked packaging technology, and added a double-side copper-clad ceramic substrate in the middle to realize the interconnection of the two dies. This packaging form not only improved the heat dissipation capability of the chip, but also enhanced the overcurrent capability. First, the current status of the laser detection transmitter module was introduced in detail, the design ideas and methods of the laser driver chip were introduced, and the specific packaging design process was given. Then, the gate driving circuit and layout were designed, and the gate driving chip was fabricated with a 0.25 μm BCD process. The multi-chip packaging scheme was designed. By setting up a peripheral circuit for testing to make the chip drive the 860 nm laser, the chip can output a narrow pulse with a pulse width of 180 ns, rise and fall times were less than 30 ns, and reached a peak current as high as 15 A when the chip power supply voltage was 12 V, the input level was 3.3 V and the frequency is 10 kHz PWM signal. It can make the laser emit light normally and meet the detection requirement. The chip has an ultra-small area about 5 mm×5 mm, which solves the problem of congestion in the internal space of the detection system caused by the traditional laser drive circuit using multi-chip modules, and provides a new idea for miniaturization.

     

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