Abstract: Mercury cadmium telluride (HgCdTe) material is an important detection material used in third-generation infrared detection systems, and its development level can reflect the optimal performance indicators of current infrared detectors. In recent years, astronomical, remote sensing, and civil equipment have put forward higher requirements for detector performance, which has brought new challenges to the design and preparation of HgCdTe infrared detectors. The finer design and processing technology of HgCdTe infrared detectors provide solutions for improving the performance of HgCdTe infrared detectors. Suppressing the harmful local field of the device and regulating the beneficial local field of the device can achieve further breakthroughs in device performance. However, how to characterize and analyse the local field of HgCdTe optoelectronic devices and clarify the origin of dark current and related noise in HgCdTe optoelectronic devices have become key scientific and technical issues to be solved to promote device performance breakthroughs. This paper summarizes the research progress of local field characterization and analysis of HgCdTe infrared photodetectors and provides basic support for the development of a new generation of HgCdTe infrared photodetectors.