Significance   In the dynamic landscape of semiconductor device fabrication, continual advancements strive to enhance the process. As the density of transistors per unit area increases and chip components become progressively smaller, the challenges in chip production grow in both intricacy and difficulty. Traditional methods like furnace annealing are becoming inadequate for the evolving demands of chip manufacturing. To address the intricacies posed by shrinking device sizes, annealing techniques and process parameters undergo constant refinement. Pulsed laser annealing emerges as a noteworthy solution, capable of precisely irradiating specific material areas in extremely brief intervals. This technique, harnessed by absorbing laser energy, rapidly elevates the material surface temperature to induce melting. The consequential reconstruction of the melt layer's crystal structure, coupled with redistributed doping in the crystal, serves the crucial purpose of eliminating defect-activated doping. The excimer laser, operating as a nanosecond pulsed ultraviolet laser, holds distinctive attributes that render it particularly meaningful in semiconductor manufacturing annealing technology. Its short wavelength, narrow pulse width, and minimal material penetration depth, especially in semiconductor materials like silicon, contribute to high absorption rates. Moreover, excimer lasers boast high resolution in focusing or projection, coupled with substantial single-pulse energy. This inherent flexibility allows for shaping the energy distribution of the pulse spot, offering adaptability to diverse requirements. These defining characteristics underscore the significance of excimer laser research in advancing semiconductor manufacturing annealing technologies.

  Progress  To optimize the annealing effect in semiconductor manufacturing, it is crucial to shorten the thermal annealing time window and carefully regulate peak temperatures. Controlling the temperature gradient from the material's surface to its interior is a pivotal consideration in annealing technology. Laser annealing is a superior alternative, offering more precise thermal budget control when compared to other methods, as illustrated in Fig.1. Additionally, the perspective of K. Huet et al. on laser thermal budget is presented. Researchers have explored the application of laser annealing in ion doping and epitaxial layer growth. The evolution of doping concentration across different substrates and dopants under excimer laser conditions has been thoroughly investigated. Brief insights into strain silicon technology and silicon on insulator technology are provided, showcasing their integration into semiconductor manufacturing for enhanced device performance. Excimer lasers have been employed by researchers to delve into devices utilizing strained silicon technology and silicon on insulator technology. In the continuous evolution of semiconductor manufacturing processes, there is ongoing innovation in the metal layer. Laser annealing treatment of the metal layer has garnered increased attention, with the reasons for this emphasis briefly explained. Notably, researchers have scrutinized the annealing of metal layers using excimer lasers. The paragraph concludes by briefly addressing the challenges associated with three-dimensional integrated circuit architecture (refer to Fig.27). Manufacturing three-dimensional integrated circuits poses difficulties, particularly in potential damage to the underlying metal and devices during upper-layer annealing. Excimer lasers have emerged as a research focus to address these challenges and optimize the annealing process for three-dimensional integrated circuits.

  Conclusions and Prospects   Excimer laser annealing stands out as a superior choice when compared to alternative annealing methods, particularly evident in the realm of semiconductor integrated circuit manufacturing. The distinct advantages of excimer laser annealing manifest in its exceptional ability to significantly reduce the thermal budget while enabling precise control over the annealing effect. This accuracy proves pivotal in semiconductor manufacturing processes. Moreover, excimer laser annealing brings noteworthy benefits to the table, including the facilitation of high-density doping with enhanced doping activation efficiency. Its unique capacity to distribute doping atoms more effectively and control junction depth contributes to its prominence in the semiconductor industry. The application of excimer laser annealing on metal layers introduces additional advantages. It effectively augments the grain size of the metal, curbing electron boundary scattering, thereby reducing resistivity. This not only enhances the reliability of the metal but also allows for superior thermal budget control. In the context of three-dimensional integrated circuits, excimer laser technology emerges as a transformative solution. It proves highly adept at reducing the thermal budget, a critical consideration in enhancing device stability within these intricate structures. Furthermore, its promising potential lies in addressing the challenges associated with annealing effects on the dopant distribution of the top layer. Excimer laser annealing, with its multifaceted advantages, thus emerges as a promising and versatile solution for optimizing semiconductor manufacturing processes, particularly in the context of three-dimensional integrated circuits.