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2 μm GaSb基大功率半导体激光器研究进展

谢圣文 杨成奥 黄书山 袁野 邵福会 张一 尚金铭 张宇 徐应强 倪海桥 牛智川

谢圣文, 杨成奥, 黄书山, 袁野, 邵福会, 张一, 尚金铭, 张宇, 徐应强, 倪海桥, 牛智川. 2 μm GaSb基大功率半导体激光器研究进展[J]. 红外与激光工程, 2018, 47(5): 503003-0503003(9). doi: 10.3788/IRLA201847.0503003
引用本文: 谢圣文, 杨成奥, 黄书山, 袁野, 邵福会, 张一, 尚金铭, 张宇, 徐应强, 倪海桥, 牛智川. 2 μm GaSb基大功率半导体激光器研究进展[J]. 红外与激光工程, 2018, 47(5): 503003-0503003(9). doi: 10.3788/IRLA201847.0503003
Xie Shengwen, Yang Cheng'ao, Huang Shushan, Yuan Ye, Shao Fuhui, Zhang Yi, Shang Jinming, Zhang Yu, Xu Yingqiang, Ni Haiqiao, Niu Zhichuan. Research progress of 2 μm GaSb-based high power semiconductor laser[J]. Infrared and Laser Engineering, 2018, 47(5): 503003-0503003(9). doi: 10.3788/IRLA201847.0503003
Citation: Xie Shengwen, Yang Cheng'ao, Huang Shushan, Yuan Ye, Shao Fuhui, Zhang Yi, Shang Jinming, Zhang Yu, Xu Yingqiang, Ni Haiqiao, Niu Zhichuan. Research progress of 2 μm GaSb-based high power semiconductor laser[J]. Infrared and Laser Engineering, 2018, 47(5): 503003-0503003(9). doi: 10.3788/IRLA201847.0503003

2 μm GaSb基大功率半导体激光器研究进展

doi: 10.3788/IRLA201847.0503003
基金项目: 

国家自然科学基金(61790580,61435012);国家973计划(2014CB643903)

详细信息
    作者简介:

    谢圣文(1991-),博士生,主要从事GaSb基大功率激光器方面的研究。Email:xsw@semi.ac.cn

  • 中图分类号: TN248

Research progress of 2 μm GaSb-based high power semiconductor laser

  • 摘要: 2 m波段GaSb基大功率激光器在诸多领域具有广阔的应用前景,如气体探测、医疗美容、激光加工等。基于功率提升,综述和讨论了2 m波段GaSb基激光器结构的发展过程,介绍了目前国内外的研究状况,讨论和分析了GaSb基激光器提升功率、效率的主要技术问题。并详细介绍了该领域近年来在传统激光器中引入的两种新结构,分析了其技术优势。指出目前2 m波段GaSb基大功率激光器面临瓶颈,并讨论了其发展趋势。
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  • 收稿日期:  2018-03-07
  • 修回日期:  2018-04-10
  • 刊出日期:  2018-05-25

2 μm GaSb基大功率半导体激光器研究进展

doi: 10.3788/IRLA201847.0503003
    作者简介:

    谢圣文(1991-),博士生,主要从事GaSb基大功率激光器方面的研究。Email:xsw@semi.ac.cn

基金项目:

国家自然科学基金(61790580,61435012);国家973计划(2014CB643903)

  • 中图分类号: TN248

摘要: 2 m波段GaSb基大功率激光器在诸多领域具有广阔的应用前景,如气体探测、医疗美容、激光加工等。基于功率提升,综述和讨论了2 m波段GaSb基激光器结构的发展过程,介绍了目前国内外的研究状况,讨论和分析了GaSb基激光器提升功率、效率的主要技术问题。并详细介绍了该领域近年来在传统激光器中引入的两种新结构,分析了其技术优势。指出目前2 m波段GaSb基大功率激光器面临瓶颈,并讨论了其发展趋势。

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