使用太赫兹快速探测器测量硅少数载流子寿命

张钊; 陈勰宇; 田震

doi:10.3788/IRLA201948.0919003

使用太赫兹快速探测器测量硅少数载流子寿命

doi: 10.3788/IRLA201948.0919003

1.
天津大学精密仪器与光电子工程学院光电信息技术教育部重点实验室太赫兹波研究中心,天津 300072

基金项目:

国家重点研发计划（2017YFA0701004）;国家自然科学基金（61722509，61675145，61735012）

详细信息

作者简介:
张钊(1994-),女,硕士生,主要从事太赫兹器件及系统方面的研究。Email:zz0608@tju.edu.cn

中图分类号: O473

Measurement of minority carrier lifetime in silicon by high speed terahertz detector

1.
Center for Terahertz Waves,College of Precision Instrument and Optoelectronics Engineering,and the Key Laboratory of Opto-electronics Information and Technology(Ministry of Education),Tianjin University,Tianjin 300072

摘要: 利用脉冲触发信号在半导体中产生非平衡态载流子的方式，提出一种使用太赫兹连续源和超快速响应探头测量半导体少数载流子寿命的方法，用于表征半导体的瞬态载流子动力学过程。根据上述设计原理及思路，以泵浦光作为周期性激励信号，搭建出一套工作时间窗口为纳秒到秒量级，时间精度在纳秒量级的非接触式半导体少数载流子寿命测量系统，具有装置简单、操作方便、成本低廉等优点。使用搭建的系统对不同掺杂类型、不同掺杂浓度、不同厚度单晶硅的非平衡态少数载流子寿命进行测量。最后，通过改变泵浦光单脉冲能量，对单晶硅光生载流子寿命进行测量，结果表明单晶硅少数载流子寿命随着泵光能量的增大而变长。该系统所实现的宽工作窗口、高时间精度太赫兹快速过程的探测，可应用于太赫兹领域的快速成像和快速生物响应探测。
- 太赫兹 /
- 光泵 /
- 单晶硅 /
- 少数载流子寿命
Abstract: Using pulse trigger signal to generate non-equilibrium carriers in semiconductor, a method for minority carrier lifetime mapping of semiconductor was proposed, with the aid of a terahertz continuous wave source and an ultrafast-response probe, which can apply for characterizing transient carrier dynamics in semiconductor. Based on the above-mentioned design principles, a non-contact minority carrier lifetime measuring system was set up by using the optical pump as the periodic excitation, whose time window was from nanosecond to second and temporal resolution was the order of nanosecond. The system owned various advantages, such as simple device, convenient operation and low cost. The non-equilibrium minority carrier lifetime of monocrystalline silicon with different doping types, different doping concentration, and different thickness were measured by using our system. Finally, the photo-generated carrier lifetime of the monocrystalline silicon was measured through changing the optical pump power. Result shows that the minority carrier lifetime of monocrystalline silicon increases with the enhancement of pump power. The wide-working-window and high-time-resolution detection of terahertz fast processes, which is realized by the proposed system, can be applied for the fast imaging and rapid bio-response detection at the terahertz range.
- terahertz /
- optical pump /
- monocrystalline silicon /
- minority carrier lifetime

[1]	Peng F, Su Y, Zhong Y, et al. Silicon nanomaterials platform for bioimaging, biosensing, and cancer therapy[J]. Accounts of Chemical Research, 2014, 47(2):612-623.
[2]	Reed G T, Mashanovich G, Gardes F Y, et al. Silicon optical modulators[J]. Nature Photonics, 2010, 4(8):518-526.
[3]	Soref R. Silicon photonics:a review of recent literature[J]. Silicon, 2010, 2(1):1-6.
[4]	Goodman A M. A method for the measurement of short minority carrier diffusion lengths in semiconductors[J]. Journal of Applied Physics, 1961, 32(12):2550-2552.
[5]	Bruno C J, Martnez Bogado M G, Pl J C, et al. Determination of the minority carrier lifetime in solar cells:a novel biased OCVD technique[J]. Physica Status Solidi A, 1999, 174(1):231-238.
[6]	Isenberg J, Riepe S, Glunz S W, et al. Carrier density imaging (CDI):a spatially resolved lifetime measurement suitable for in-line process-control[C]//29th IEEE Photovoltaic Specialists Conference (PVSC), 2002:266-269.
[7]	Isenberg J, Riepe S, Glunz S W, et al. Imaging method for laterally resolved measurement of minority carrier densities and lifetimes:Measurement principle and first applications[J]. Journal of Applied Physics, 2003, 93(7):4268-4275.
[8]	George P A, Strait J, Dawlaty J, et al. Ultrafast optical-pump terahertz-probe spectroscopy of the carrier relaxation and recombination dynamics in epitaxial graphene[J]. Nano Letters, 2008, 8(12):4248-4251.
[9]	Kar S, Su Y, Nair R, et al. Probing photoexcited carriers in a few-layer MoS2 laminate by time-resolved optical pump-terahertz probe spectroscopy[J]. ACS Nano, 2015, 9(12):12004-12010.
[10]	Parkinson P, Dodson C, Joyce H J, et al. Noncontact measurement of charge carrier lifetime and mobility in GaN nanowires[J]. Nano Letters, 2012, 12(9):4600-4604.
[11]	Strait J H, Wang H, Shivaraman S, et al. Very slow cooling dynamics of photoexcited carriers in graphene observed by optical-pump terahertz-probe spectroscopy[J]. Nano Letters, 2011, 11(11):4902-4906.
[12]	Magusara V K, Funkner S, Niehues G, et al. Low temperature-grown GaAs carrier lifetime evaluation by double optical pump terahertz time-domain emission spectroscopy[J]. Optics Express, 2016, 24(23):26175-26185.
[13]	Beard M C, Turner G M, Schmuttenmaer C A. Sub-picosecond carrier dynamics in low-temperaturegrown GaAs as measured by time-resolved THz spectroscopy[J]. Journal of Applied Physics, 2001, 90(12):5915-5923.
[14]	Neu J, Rahm M. Terahertz time domain spectroscopy for carrier lifetime mapping in the picosecond to microsecond regime[J]. Optics Express, 2015:23(10):12900-12909.
[15]	Underwood D F, Kippeny T, Rosenthal S J. Ultrafast carrier dynamics in CdSe nanocrystals determined by femtosecond fluorescence upconversion spectroscopy[J]. Journal of Physical Chemistry B, 2001, 105(2):436-443.
[16]	Ramanathan S, Patibandla S, Bandyopadhyay S, et al. Fluorescence spectroscopy of electrochemically self-assembled ZnSe and Mn:ZnSe nanowires[J]. Nanotechnology, 2008, 19(19):195601.
[17]	Yao G, Lu L, Gui M, et al. Investigation of ultrafast dynamics of CdTe quantum dots by femtosecond fluorescence up-conversion spectroscopy[J]. Chinese Physics B, 2012, 21(10):107801.

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使用太赫兹快速探测器测量硅少数载流子寿命

doi: 10.3788/IRLA201948.0919003

作者简介:
张钊(1994-),女,硕士生,主要从事太赫兹器件及系统方面的研究。Email:zz0608@tju.edu.cn

Measurement of minority carrier lifetime in silicon by high speed terahertz detector

计量

使用太赫兹快速探测器测量硅少数载流子寿命

doi: 10.3788/IRLA201948.0919003

1. 天津大学精密仪器与光电子工程学院光电信息技术教育部重点实验室太赫兹波研究中心,天津 300072

作者简介:
张钊(1994-),女,硕士生,主要从事太赫兹器件及系统方面的研究。Email:zz0608@tju.edu.cn

English Abstract

Measurement of minority carrier lifetime in silicon by high speed terahertz detector

1. Center for Terahertz Waves,College of Precision Instrument and Optoelectronics Engineering,and the Key Laboratory of Opto-electronics Information and Technology(Ministry of Education),Tianjin University,Tianjin 300072

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留言板

使用太赫兹快速探测器测量硅少数载流子寿命

doi: 10.3788/IRLA201948.0919003

作者简介: 张钊(1994-),女,硕士生,主要从事太赫兹器件及系统方面的研究。Email:zz0608@tju.edu.cn

Measurement of minority carrier lifetime in silicon by high speed terahertz detector

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出版历程

使用太赫兹快速探测器测量硅少数载流子寿命

doi: 10.3788/IRLA201948.0919003

1. 天津大学 精密仪器与光电子工程学院 光电信息技术教育部重点实验室太赫兹波研究中心,天津 300072

作者简介: 张钊(1994-),女,硕士生,主要从事太赫兹器件及系统方面的研究。Email:zz0608@tju.edu.cn

English Abstract

Measurement of minority carrier lifetime in silicon by high speed terahertz detector

1. Center for Terahertz Waves,College of Precision Instrument and Optoelectronics Engineering,and the Key Laboratory of Opto-electronics Information and Technology(Ministry of Education),Tianjin University,Tianjin 300072

全文HTML

目录

作者简介:
张钊(1994-),女,硕士生,主要从事太赫兹器件及系统方面的研究。Email:zz0608@tju.edu.cn

1. 天津大学精密仪器与光电子工程学院光电信息技术教育部重点实验室太赫兹波研究中心,天津 300072

作者简介:
张钊(1994-),女,硕士生,主要从事太赫兹器件及系统方面的研究。Email:zz0608@tju.edu.cn