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具有光学多参量调控能力的光学超构表面可以任意构造近场和远场光波,已经成为基础研究和应用研究的理想平台。相对于传统光学元件,超构表面具有超轻、超薄及多功能集成的优势,且全电介质型超构表面效率高、加工与CMOS工艺兼容,这使得超构表面有望成为继折射光学元件和衍射光学元件的第三代新型光学元件,革新整个光学领域的面貌。然而,要真正实现光学超构表面从实验室走向实际应用,高分辨率、高精度、高深宽比、难加工材料、大面积、低成本的微纳结构的加工是关键。所以,文中总结了超构表面发展大概十年时间内的各类微纳加工方法及其在光学超构表面的应用,包括适用于小批量原理验证的直写类加工技术,如电子束、离子束、光子束直写,以及模板转移技术,包括投影式光刻、纳米压印等技术,还有一些新兴的纳米加工技术,如探针扫描和自组装技术。笔者等将这些方法的加工尺度、精度、适用波段和技术特点总结在表1中,这些加工方法各有优劣,其应用让光学超构表面得到迅速发展,但是距离超构表面的真正走向实际工程应用,仍然有很多问题需要解决。笔者等总结了以下几点光学超构表面加工方面的挑战和未来的发展趋势。
表 1 超构表面加工方法及其工艺特点总结
Table 1. Summary of fabrication methods of metasurfaces and their process characteristics
Process Feature size Applicable band Precision Process characteristics Direct
writing technologyElectron beam lithography <10 nm UV to infrared ~1 nm High resolution, high degree of freedom, low efficiency for large-scale or complicated pattern, subsequent pattern transfer process required Focused ion beam etching ~20 nm Visible to infrared <100 nm High resolution, high degree of freedom, no material selectivity, ultralow efficiency Laser direct writing ~1 μm Visible to terahertz <1 μm High degree of freedom, resolution is limited by the optical diffraction limit, subsequent pattern transfer process required Ultrafast direct laser etching <200 nm <100 nm No material selectivity, minimal thermal effect, low-damage-threshold Two-photon (multiphoton) lithography <200 nm <100 nm Higher resolution than single photon lithography, high spatial selectivity, three-dimensional structures processing Scanning probe lithography <10 nm Visible to infrared <10 nm Simple process, low efficiency Template transfer technology Immersion lithography <100 nm Visible to infrared <100 nm High resolution, high alignment accuracy, high equipment cost, high requirements of processing Plasmonic lithography ~100 nm Visible to infrared <100 nm High-resolution, high processing efficiency, short working life, poor fidelity Hot embossing Depend on the master - - Relatively simple process, time consuming which is not suitable for mass production UV-curable nanoimprint lithography Nanoscale High efficiency, material selectivity Laser assisted direct imprint ~10 nm High-resolution, low heat release during processing, short processing time Micro-contact printing <100 nm Low cost, suitable for large-area or simple pattern processing Self-assembly lithography nm - μm - ~1 nm Low cost, suitable for large-area or simple pattern processing, simple process (1)目前的光学超构表面加工大部分集中在新原理、新功能的验证,但是加工的器件性能和仿真差距很大。这是由于目前的加工中很少考虑材料本征特性误差、尺寸误差、形状误差、超构单元倒塌缺失等一系列加工误差引起的性能下降。如果要实现超构表面真正走向应用,则需要系统研究加工误差与器件性能之间的定量关系,建立微纳加工误差评价体系和标准以指导超构表面产业化生产;需要研究各类加工方法中导致误差的原因以及如何优化工艺控制加工误差以实现高质量光学超构表面的加工。
(2)目前的直写加工技术仅适用于科研领域小面积验证和模板制备,而真正应用则需要如投影式曝光或纳米压印的大面积模板转移技术。而半导体产业先进的投影式曝光技术使用门槛和成本都很高,自由度和定制化能力不强,所以适用于有超大市场需求的单一产品的加工。纳米压印设备成本相对较低,且更适用于高自由度、定制化的光学元件加工。因此,一方面,目前超构表面元件发展初期的应用更适合利用纳米压印技术在玻璃晶圆上进行压印加工,以加工各类不同的光学元件满足不同场景的替代,但需要解决大面积模板制备和高折射率压印胶材料问题。另一方面,也需要探索超构表面能够取代传统光学元件并具有大批量需求的应用场景,以驱动半导体玻璃晶圆加工产业链整合升级,实现光学超构表面的批量化生产。
(3)目前的超构表面加工采用的是微纳加工一些共性设备和工艺,虽然可以满足大部分的超构表面加工要求,但是,随着超构表面的不断发展以及概念的拓展,各种新原理、新设计、新结构会不断涌现,已有的加工装备和工艺已经满足不了这些特殊的加工要求。因此,在超构表面发展的同时,也要发展超构表面加工的专用装备和工艺,以实现与超构表面发展协同良性发展,促进超构表面真正走向产业应用。
Progress of micro-nano fabrication technologies for optical metasurfaces
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摘要: 超构表面由二维平面内精心排布的亚波长单元组成,为设计超紧凑型光学元件提供了新的范式,在微型化光学系统方面显示出了极大的潜力。在不到十年时间里,超构表面由于具有超轻、超薄且能够操纵光波的各种参量以实现多功能集成的优势在多学科领域引起了广泛的关注。然而,在光学波段,高自由度、非周期、排列密集的超构单元对其加工制备提出了很多极端的参数要求,如极小尺度、极高精度、高深宽比、难加工材料、跨尺度等,这使得超构表面从实验室走向实际应用面临极大的挑战。文中总结了近些年用于超构表面各类微纳加工方法的各类方法的原理、特点和最新进展,包括小面积直写方法、大面积模板转移方法以及一些新兴的加工方法。最后,针对超构表面在加工方面的目前的挑战和未来的发展趋势进行了总结和展望。Abstract: The metasurface is composed of carefully arranged sub-wavelength units in a two-dimensional plane, which provides a new paradigm for designing ultra-compact optical elements and shows great potential in miniaturizing optical systems. In less than ten years, metasurfaces have caused extensive concern in multidisciplinary fields due to their advantages of being ultra-light, ultra-thin and capable of manipulating various parameters of light waves to achieve multi-functional integration. However, in the optical band, high-degree-of-freedom, aperiodic, and densely arranged metaunits put forward many extreme parameter requirements for fabrication, such as extremely small size, extremely high precision, high aspect ratio, difficult-to-process materials, cross-scale, etc. This poses a great challenge for metasurfaces from laboratory to practical applications. Here, the principles, characteristics and latest developments for micro-nano fabrication of metasurfaces in recent years were summarized, including small-area direct writing methods, large-area template transfer methods, and some emerging fabrication methods. Finally, the current challenges and future development trends of metasurface fabrication were summarized and prospected.
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Key words:
- metasurface /
- micro/nano fabrication /
- extreme manufacturing
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图 1 电子束曝光用于超构表面加工。用于金属超构表面制备的(a)剥离工艺流程及其加工的(b)透射型金属超构表面和(c)反射型金属超构表面;用于电介质超构表面制备的(d)硬掩模刻蚀工艺流程及其加工的(e)硅超构表面、(f) GaN消色差超构透镜、(g) TiO2全息超构表面;用于电介质超构表面制备的(h)共形填充工艺流程及其加工的(i) TiO2超构透镜和(j) Nb2O5超构表面
Figure 1. Fabrication of metasurfaces by electron beam lithography (EBL). (a) Lift-off process for metallic metasurfaces fabrication and its processed (b) transmissive metallic metasurface and (c) reflective metallic metasurface; (d) Hard-mask etching process for dielectric metasurfaces fabrication and its processed (e) Si metasurface, (f) GaN achromatic metalens and (g) TiO2 holographic metasurface; (h) Conformal filling process for dielectric metasurfaces fabrication and its processed (i) TiO2 metalens and (j) Nb2O5 metasurface
图 2 聚焦离子束刻蚀用于超构表面加工。聚焦离子束刻蚀加工的金属孔状结构用于(a)全息超构表面、(b)近场光场操控以及(c)结构色调控;(d)聚焦离子束刻蚀加工的金属纳米柱状超构表面用于涡旋光聚焦;(e)聚焦离子束刻蚀加工准三维结构超构表面;聚焦离子束刻蚀加工非金属超构表面,如(f)GST相变材料超构表面、(g)钙钛矿超构表面以及(h)金属介质多材料叠层结构
Figure 2. Fabrication of metasurfaces by focused ion beam (FIB) etching. The metallic nano-hole structures fabricated by FIB is used for (a) holographic metasurface, (b) near-field light field control and (c) structural color modulation; (d) Metallic nanopillar-type metasurface etched by FIB for vortex optical focusing; (e) Metasurface of quasi-3D structure fabricated by FIB. Non-metallic metasurface fabricated by FIB, such as (f) GST phase change material metasurface, (g) perovskite metasurface and (h) metal-dielectric multi-material laminated structure
图 3 激光直写加工用于超构表面制备。(a)基于激光直写加工的偏振可控的光涡旋调制的全介质超构表面;(b)单步激光直写加工过程示意图;(c)基于超快飞秒激光直写技术的傅里叶全息图;(d)利用飞秒激光的狭缝空间调控技术在金薄膜上制造了两种椭圆孔径的太赫兹超构表面;(e)利用飞秒激光制作二维钙钛矿透镜;(f)基于二维钙钛矿纳米片上制作的性能易调整新型平面透镜照片和表征SEM图像;(g)基于双光子聚合3D打印加工的具有不同对称性的直接和倒置光子结构的表征SEM图像;(h)基于双光子聚合3D打印加工接近完美的红外光谱吸收超构表面的加工原理图和表征SEM图像;(i)基于双光子聚合3D打印加工计算机生成全息投影的工艺流程图及其全息示意图;(j)基于双光子聚合3D打印加工的达曼光栅在远场中生成N×N点阵列的示意图
Figure 3. Fabrication of metasurfaces by direct laser writing (DLW). (a) Polarization-controllable optical vortex modulation all-dielectric metasurface based on DLW; (b) Schematic diagram of single-step ultrafast laser interference direct writing etching process; (c) Fourier hologram based on ultrafast femtosecond laser etching technology; (d) Two terahertz metasurface with elliptic apertures fabricated by the femtosecond laser slit space control technology on the gold film; (e) 2D perovskite lens fabricated by femtosecond laser; (f) Physical image and SEM image of the new type flat lens whose performance is easy to control based on 2D perovskite nanosheets; (g) SEM images of direct and inverted photonic structure with different symmetry fabricated by two-photon polymerization 3D printing process; (h) Processing principle diagram and SEM image of the nearly perfect infrared spectrum absorption metasurface based on two-photon polymerization 3D printing process; (i) Process flow chart of computer-generated holographic projection based on two-photon polymerization 3D printing process and the schematic diagram of the hologram; (j) Schematic diagram of a Daman grating generating an N×N dot array in the far field based on two-photon polymerization 3D printing process
图 4 掩模光刻技术用于超构表面加工。(a)硅上直接光刻加工的超构表面的半波片的功能示意图,其单个结构的尺寸参数见插图(左),加工后的12 in硅晶片图片及位于中间白色线框位置的纳米柱结构的三幅SEM图像(右);(b)添加中间介质层后光刻的彩色显示超构表面示意图(左),硅晶片及一个单元中彩色显示图案(中)和不同尺寸参数的纳米结构SEM图像,左下为彩色显示的图案(右);(c)在透明的玻璃基底上添加不透明层进行光刻的工艺流程图(左),加工出的晶片及放大后的一个加工单元的图案(右);(d)用全玻璃制造的超构表面的光刻流程图(上),及加工后纳米柱结构的SEM图像及透镜示意图(下);(e)玻璃基底使用层转移技术加工的超构透镜示意图(左),单元结构示意图(右);(f)带有金属反射层的超构表面单元结构的SEM图像(左),光刻的结构示意图(右);(g)采用等离子体反射透镜的近场光刻结构示意图
Figure 4. Fabrication of metasurfaces by mask photolithography process. (a) Schematic of metasurface-based half-wave plate by processing directly on Si wafer (left), photograph of the fabricated 12-in Si metasurface wafer and three SEM images of Si pillar array inside the center white squares of the wafer(right); (b) Schematic of color display metasurface by adding a dielectric layer before the photolithography (left), silicon wafers and nanostructures of different sizes, the bottom left is the pattern of color display (right); (c) Flow diagram of photolithography on the transparent glass substrate (left), the fabricated wafer and the enlarged unit pattern(right); (d) Lithography process of the all-glass metasurface with opaque layer (up), the SEM images of the fabricated nanopillars and result of lens(down); (e) Schematic of the metalens by layer transfer technology on glass substrate (left), the schematic of unit structure (right); (f) SEM image of reflective metasurface with a metal layer (left), the schematic of structure of photolithography (right); (g) Schematic of the near-field lithography structure with the reflective plasmonic lens
图 5 纳米压印用于超构表面加工。(a)热固化方式的纳米压印的两种超构表面SEM图(左)对应的压印工艺示意图(右);(b)热固化纳米压印加剥离工艺制造超构表面的工艺流程图(左),加工出的超构表面的SEM图像(右);(c)采用紫外光固化方式的纳米压印流程示意图;(d)采用紫外光固化压印加工后热发射超构表面的加工后的SEM图像,上下分别为顶视图和横截面视图,左右分别为残胶去除前后的图像;(e)紫外光固化方式的纳米压印加工出的非对称传输超构表面的横截面的SEM示意图像;(f)印章式纳米压印的工艺流程图:纳米印章的制备和印章的压印及后续刻蚀;(g)激光辅助的纳米压印流程图,加工出的超构表面在电子扫描显微镜下的的SEM图像
Figure 5. Fabrication of metasurfaces by nanoimprint lithography. (a) SEM images of the two kinds of metasurface by thermal curing nanoimprint(left), schematic of the corresponding process(right); (b) Process of manufacturing with the thermal curing nanoimprint lithography and lift off (left) and the SEM image of the fabricated metasurface (right); (c) Schematic of the UV curing nanoimprint lithography process; (d) SEM image of the fabricated thermal emission metasurface by UV curing nanoimprint lithography. Top views and cross-sectional views are showed up and down and the images of before and after removing residual glue are showed left and right; (e) Cross-sectional SEM image of the asymmetric transmission metasurface processed by UV curing nanoimprint lithography; (f) Schematic of the stamp type nanoimprints: the preparation of the nanostamp, and the imprinting of the stamp and follow-up etching; (g) Process of the laser-assisted nanoimprint and the SEM image of the fabricated metasurface
图 6 其他新兴加工方法用于超构表面加工。(a)自组装的工艺示意图(上)、加工出的反射镜超构表面显微图(下);(b)探针扫描刻蚀方法加工出的超构表面在原子力显微镜下的图像,坐标轴分布为x、 y、z坐标。
Figure 6. Fabrication of metasurfaces by other emerging processing methods. (a) Schematic diagram of the self-assembly process (top) and the micrograph of the metasurface of the processed reflector (bottom); (b) Image of the metasurface processed by the scanning probe lithography under the atomic force microscope. The coordinate axes are x, y, z coordinates
表 1 超构表面加工方法及其工艺特点总结
Table 1. Summary of fabrication methods of metasurfaces and their process characteristics
Process Feature size Applicable band Precision Process characteristics Direct
writing technologyElectron beam lithography <10 nm UV to infrared ~1 nm High resolution, high degree of freedom, low efficiency for large-scale or complicated pattern, subsequent pattern transfer process required Focused ion beam etching ~20 nm Visible to infrared <100 nm High resolution, high degree of freedom, no material selectivity, ultralow efficiency Laser direct writing ~1 μm Visible to terahertz <1 μm High degree of freedom, resolution is limited by the optical diffraction limit, subsequent pattern transfer process required Ultrafast direct laser etching <200 nm <100 nm No material selectivity, minimal thermal effect, low-damage-threshold Two-photon (multiphoton) lithography <200 nm <100 nm Higher resolution than single photon lithography, high spatial selectivity, three-dimensional structures processing Scanning probe lithography <10 nm Visible to infrared <10 nm Simple process, low efficiency Template transfer technology Immersion lithography <100 nm Visible to infrared <100 nm High resolution, high alignment accuracy, high equipment cost, high requirements of processing Plasmonic lithography ~100 nm Visible to infrared <100 nm High-resolution, high processing efficiency, short working life, poor fidelity Hot embossing Depend on the master - - Relatively simple process, time consuming which is not suitable for mass production UV-curable nanoimprint lithography Nanoscale High efficiency, material selectivity Laser assisted direct imprint ~10 nm High-resolution, low heat release during processing, short processing time Micro-contact printing <100 nm Low cost, suitable for large-area or simple pattern processing Self-assembly lithography nm - μm - ~1 nm Low cost, suitable for large-area or simple pattern processing, simple process -
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