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锗近红外光电探测器制备工艺研究进展

黄志伟 汪建元 黄巍 陈松岩 李成

黄志伟, 汪建元, 黄巍, 陈松岩, 李成. 锗近红外光电探测器制备工艺研究进展[J]. 红外与激光工程, 2020, 49(1): 0103004-0103004(8). doi: 10.3788/IRLA202049.0103004
引用本文: 黄志伟, 汪建元, 黄巍, 陈松岩, 李成. 锗近红外光电探测器制备工艺研究进展[J]. 红外与激光工程, 2020, 49(1): 0103004-0103004(8). doi: 10.3788/IRLA202049.0103004
Huang Zhiwei, Wang Jianyuan, Huang Wei, Chen Songyan, Li Cheng. Research progress of technologies for germanium near-infrared photodetectors[J]. Infrared and Laser Engineering, 2020, 49(1): 0103004-0103004(8). doi: 10.3788/IRLA202049.0103004
Citation: Huang Zhiwei, Wang Jianyuan, Huang Wei, Chen Songyan, Li Cheng. Research progress of technologies for germanium near-infrared photodetectors[J]. Infrared and Laser Engineering, 2020, 49(1): 0103004-0103004(8). doi: 10.3788/IRLA202049.0103004

锗近红外光电探测器制备工艺研究进展

doi: 10.3788/IRLA202049.0103004
基金项目: 

国家自然科学基金(61474094,61474081)

详细信息
    作者简介:

    黄志伟(1989-),男,讲师,博士,主要从事硅基光电探测器方面的研究。Email:252792371@qq.com

  • 中图分类号: TN215

Research progress of technologies for germanium near-infrared photodetectors

  • 摘要: Ge材料由于在近红外波段具有较大的吸收系数、高的载流子迁移率、以及与Si工艺相兼容等优势而被视为制备近红外光电探测器最理想的材料之一。针对Ge光电探测器制备过程中面临的挑战,文中综述了近年来笔者所在的课题组在Ge探测器材料、器件及工艺方面的研究进展。首先介绍了Si基Ge材料的制备工艺,利用低温缓冲层生长技术、Ge/Si键合技术、Ge浓缩技术等分别制备得到高晶体质量的Si基Ge材料。研究了Ge材料n型掺杂工艺,利用离子注入结合两步退火处理(低温预退火和激光退火)以及利用固态磷旋涂工艺等分别实现Ge材料n型高掺浅结制备。最后探究了金属/Ge接触势垒高度的调制方法,结合金属中间层和透明导电电极ITO制备得到性能良好的Ge肖特基光电探测器。
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    [11] Lin G, Liang D, Wang J, et al. Strain evolution in SiGe-on-insulator fabricated by a modified germanium condensation technique with gradually reduced condensation temperature[J]. Materials Science in Semiconductor Processing, 2019, 97:56-61.
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    [15] Zhang L, Hong H, Li C, et al. High-Sn fraction GeSn quantum dots for Si-based light source at 1.55μm[J]. Applied Physics Express, 2019, 12(5):055504.
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    [17] Wang C, Li C, Wei J, et al. High-performance Ge pn photodiode achieved with preannealing and excimer laser annealing[J]. IEEE Photonics Technology Letters, 2015, 27(14):1485-1488.
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    [21] Wu Z, Huang W, Li C, et al. Modulation of Schottky barrier height of metal/TaN/n-Ge junctions by varying TaN thickness[J]. IEEE Trans Electron Devices, 2012, 59(9):1328.
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    [24] Liu H, Wang P, Qi D, et al. Ohmic contact formation of metal/amorphous-Ge/n-Ge junctions with an anomalous modulation of Schottky barrier height[J]. Applied Physics Letters, 2014, 105(19):192103.
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    [26] Huang Z, Li C, Lin G, et al. Suppressing the formation of GeOx by doping Sn into Ge to modulate the Schottky barrier height of metal/n-Ge contact[J]. Applied Physics Express, 2016, 9(2):021301.
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  • 收稿日期:  2019-10-30
  • 修回日期:  2019-11-21

锗近红外光电探测器制备工艺研究进展

doi: 10.3788/IRLA202049.0103004
    作者简介:

    黄志伟(1989-),男,讲师,博士,主要从事硅基光电探测器方面的研究。Email:252792371@qq.com

基金项目:

国家自然科学基金(61474094,61474081)

  • 中图分类号: TN215

摘要: Ge材料由于在近红外波段具有较大的吸收系数、高的载流子迁移率、以及与Si工艺相兼容等优势而被视为制备近红外光电探测器最理想的材料之一。针对Ge光电探测器制备过程中面临的挑战,文中综述了近年来笔者所在的课题组在Ge探测器材料、器件及工艺方面的研究进展。首先介绍了Si基Ge材料的制备工艺,利用低温缓冲层生长技术、Ge/Si键合技术、Ge浓缩技术等分别制备得到高晶体质量的Si基Ge材料。研究了Ge材料n型掺杂工艺,利用离子注入结合两步退火处理(低温预退火和激光退火)以及利用固态磷旋涂工艺等分别实现Ge材料n型高掺浅结制备。最后探究了金属/Ge接触势垒高度的调制方法,结合金属中间层和透明导电电极ITO制备得到性能良好的Ge肖特基光电探测器。

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