Damage characteristics of the solar cells irradiated by nanosecond pulsed lasers and the effects on photoelectric conversion
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摘要: 针对纳秒脉冲激光辐照三结GaAs太阳能电池损伤特性及对光电转化影响开展研究。从损伤形貌、伏安特性、电致发光三个方面建立实验系统,分别从材料烧蚀形貌、电性能输出、内部损伤情况来分析电池光电性能逐渐下降特性。在分析了激光能量密度影响的基础上,进一步分析了激光辐照部位的影响,如电池栅线与非栅线部位。纳秒脉冲激光由于峰值功率较高,能对电池产生明显损伤,激光辐照电池的栅线部位损伤效果强于辐照非栅线部位,主要由于栅线电极的作用是用于光生载流子的收集,激光辐照熔断电池栅线,降低电池输出功率。研究结论对于提高太阳能电池空间防护能力具有指导意义。Abstract: Damage characteristics of triple-junction GaAs solar cells irradiated by nanosecond pulsed lasers and their effects on photoelectric conversion were studied. The experimental system was established including damage morphology, voltage-current characteristics, and electroluminescence. The gradual decline characteristics of the photovoltaic performance of the cell was analyzed from the material ablation morphology, electrical performance output, and internal damage. On the basis of analyzing the influences of laser energy density, the influence of laser irradiation regions, such as the grid line part and non-grid line part of the cell, was further analyzed. Nanosecond pulsed lasers can cause obvious damage to the cell due to its high peak power. The damage effect of the grid line part of the laser was stronger than that of the non-grid line part, mainly because the function of the grid line electrode was used to collect photo-generated carrier. When the laser radiation fused the cell grid lines, which was used to collect photogenerated carriers, the output power of the cell was reduced. The research conclusions are of great significance for improving the protection capability of the solar cells.
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图 4 纳秒激光辐照三结GaInP2/GaAs/Ge电池非栅线部位的形貌变化。(a) 电池的原始形貌;(b)~(i) 激光能量密度为3.3、9.2、19.4、33.6、66.5、105.5、129.5、163.5 J·cm−2时激光辐照的形貌变化
Figure 4. Morphology changes of the non-gate line part of the triple junction GaInP2/GaAs/Ge cell irradiated by nanosecond laser. (a) Original shape of the cell; (b)-(i) Morphology changes by laser irradiation when laser energy density is 3.3, 9.2, 19.4, 33.6, 66.5, 105.5, 129.5, 163.5 J·cm−2 respectively
图 5 纳秒激光辐照三结GaInP2/GaAs/Ge电池非栅线部位的电致发光变化。(a) 激光未辐照时的电致发光结果;(b)~(h) 激光能量密度为3.3、19.4、33.6、66.5、105.5、129.5、163.5 J·cm−2时的电致发光结果
Figure 5. Electroluminescence changes of the non-gate line part of the triple junction GaInP2/GaAs/Ge cell irradiated by nanosecond laser. (a) Electroluminescence results with no laser ablation; (b)-(h) Electroluminescence results by laser irradiation when laser energy density is 3.3, 19.4, 33.6, 66.5, 105.5, 129.5, 163.5 J·cm−2 respectively
图 10 纳秒激光辐照三结GaInP2/GaAs/Ge电池栅线部位的电致发光变化。(a) 激光未辐照时的电致发光结果;(b)~(d) 激光能量密度为 3.3、6.5、105.5 J·cm−2的电致发光结果
Figure 10. Electroluminescence changes of the gate line part of the triple junction GaInP2/GaAs/Ge cell irradiated by nanosecond laser. (a) Electroluminescence results with no laser ablation; (b)-(d) Electroluminescence results by laser irradiation when laser energy density is 3.3, 6.5, 105.5 J·cm−2 respectively
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