[1] Li N, Xiong D Y, Yang X F, et al. Dark currents of GaAs/AlGaAs quantum-well infrared photodetectors[J]. Appl PhysA, 2007(89): 701-705.
[2]
[3]
[4] Nutku F, Erol A, Gunes M, et al. I-V characterization of aquantum well infrared photodetector with stepped and gradedbarriers [J]. Superlattices and Microstructures, 2012 (52):585-593.
[5]
[6] Choi K K, Jhabvala M D, Forrai D P, et al. Electromagneticmodeling of quantum well infrared photodetectors [J]. IEEEJ Quantum Electron, 2012, 48(3): 384-393.
[7]
[8] Hu Xiaoying, Liu Weiguo, Chen Zhili. Dark currentcharacteristic analysis of GaAs/AlGaAs quantum well infraredphotodetectors based on MOVCD [J]. SemiconductorOptoelectronics，2012, 33(06): 809-812. (in Chinese)
[9]
[10] Lu Wei, Li Ning, Zhen Honglou, et al. A new group ofinfrared opto-electronics quantum well infrared photodetectors[J]. Science in China, 2009, 39(3): 336-343. (in Chinese)
[11] Jin Jupeng, Liu Dan, Wang Jianxin, et al. 320 256GaAs/AlGaAs long-wav elength quantum well infraredphotodetectorfocal plane array [J]. Infrared and LaserEngineering, 2012, 41(4): 833-837. (in Chinese)
[12]
[13]
[14] Guzman A, Sanchez-Rojas J L, Tijero J M G, et al. Growthand characterization of a bound-to-quasi- continuum QWIPwith Al-graded triangular confinement barriers [J]. IEEEPhotonice Technology Letters, 1999, 11(12): 1650-1652.
[15]
[16] Eric Costard, Bois P, Alfredo De Rossi, et al. QWIP detectorsand thermal imagers [J]. C R Physique (Comptes RendusPhysique), 2003(4): 1089-1102.
[17] Ribet-Mohamed I, Rouzo J L, Rommeluere S, et al.Advanced characterization of the radiometric performances ofquantum well infrared photodetectors [J]. Infrared Physics Technology, 2005, 47: 119-131.
[18]
[19] Li Xianjie, Liu Yingbin, Feng Zheng, et al. AlGaAs/GaAsquantum well infrared photodetector focal plane array basedon MOCVD technology [J]. Infrared and Laser Engineering,2007, 36(4): 435-438. (in Chinese)
[20]
[21] Shi Yanli. 320 256 GaAs/AlGaAs quantum well infraredphotodetector [J]. Infrered and Laser Engineering, 2008, 37(1): 42-44. (in Chinese)
[22]
[23] Hu Xiaoying, Liu Weiguo. Microstructure studies of GaAs/AlxGa1-xAs quantum well infrared photodetector [J]. HighPower Laser and Particals Beams, 2013, 25(6): 1405-1408.