[1] Tian Chaoqun, Wei Donghan, Liu Lei, et al. Etching of GaSb-based materials of mid-infrared semiconductor laser[J]. Infrared and Laser Engineering, 2013, 42(12): 3363-3366. (in Chinese)
[2]
[3]
[4] Barrios P, Gupta J, Lapointe J, et al. Single-longitudinal-mode InGaAsSb/AlGaAsSb lasers for gas sensing[J]. Rev Cub Fisica, 2010, 27(1):42-44.
[5] Xu Yun, Wang Yongbin, Zhang Yu, et al. High power 2-m room-temperature continuous-wave operation of GaSb-based strained quantum-well lasers[J]. Chin Phys B, 2013, 22(9): 439-441.
[6]
[7]
[8] Zhang Tiancheng, Ni Qinfei, Liu Xuezhen, et al. MBE growth of 2.3 m InGaAsSb/AlGaAsSb strained multiple quantum well diode lasers[J]. KEM, 2013, 32(7): 389-392.
[9]
[10] Shi Wei, Huang Lirong, Duan Ziguang, et al. Non-Uniform distribution of injected carriers in multiple quantumWel[J]. Acta Photonica Sinica, 2006, 35(9):1313-1316. (in Chinese)
[11] Alahyarizadeh G H, Hassan Z, Thahab S M, et al. Investigation of the performance characteristics of 500 nm to 510 nm green InGaN MQWs laser diodes[J]. Digest Journal of Nanomaterials and Biostructures, 2013, 8(2):529-540.
[12]
[13]
[14] Liang Xuemei. Configuration disquisitions of high power semiconductor lasers[D]. Changchun: Changchun Institute of Optics, Fine Mechanics and Physics, 2010. (in Chinese)
[15] Li Zhanguo. Study on epitaxial growtu of 2 m semiconductor laser materials and device fabrication[D]. Changchun: Changchun University of Science and Technology, 2010. (in Chinese)
[16]
[17]
[18] Jambunathan R, Singh J. Effects of non-uniform charge injection on gain, threshold current, and linewidth enhancement factor for a 1.55 mm InP-based multiple quantum well laser[J]. J Appl Phys, 1996, 80(12): 6875-6879.
[19] O'Brien K, a Sweeney S J, dams A R, et al. Recombination processes in mid-infrared InGaAsSb diode lasers emitting at 2.37 m[J]. Applied Physics Letters, 2006, 89(051104): 1-3.
[20]
[21] Jia Guozhi, Yao Jianghong, Liu Guoliang, et al. Effect of Auger recombination on the threshold current of strained quantum well laser[J]. Chinese Journal of Quantum Electronics, 2007, 24(1): 105-109. (in Chinese)
[22]
[23] Fischer A, Kiihne H, Richter H. New approach in equilibrium theory for strained layer relaxation[J]. Physical Review Letters, 1994, 73(20): 2712-2715.
[24]
[25]
[26] Zhang Ziyang, Zhang Baolin, Zhou Tianming, et al. Study on the interface of GaInAsSb/GaSb heterostructure with scanning transmission electron microscope[J]. Journal of Functional Materials, 2000, 31(5):505-507. (in Chinese)
[27]
[28] Lin Chun. Investigation of devices and physics for 2 m antimonide 1asers and photodiodes[D]. Shanghai: Chinese Academy of Science, 2001. (in Chinese)
[29] Zhang Y G, Li A Z, Zheng Y L, et al. MBE grown 2.0 mm InGaAsSb/AlGaAsSb MQW ridge waveguide laser diodes[J]. Journal of Crystal Growth, 2001, 227-228: 582-585.