[1] |
Garbuzov D Z, Abeles J H, Morries N A, et al. 4 watt, high effciency, 0.81 m SQW-SCH AlGaAs/GaAs laser diodes with broadened waveguides//IEEE/OSA Conf lasers Optics Anaheim, 1996: 79-80. |
[2] |
|
[3] |
Chiu T H, Tsang W T, Ditzenberger J A, et al. Room temperature operation of InGaAsSb/AlGaAsSb double heterostructure laser near 2.2 m prepared by molecular beam epitaxy[J]. Appl Phys Lett, 1986, 49: 1051. |
[4] |
|
[5] |
Zhang Xiu, Bo Baoxue, Gao Xin et al. Research and design of the ridge waveguide semiconductor laser mode characteristics[J]. Journal of Changchun University of Science and Technology, 2011, 34(2): 56-58. (in Chinese) |
[6] |
|
[7] |
|
[8] |
Liu Guojun, Bo Baoxue, Qu Yi, et al. Technology development and research of high-power semiconductor lasers[J]. Infrared and Laser Engineering, 2007, 36(S): 4-36. (in Chinese) |
[9] |
Zhang Xiong, Li Aizhen, Zhang Yonggang, et al. 2 m AlGaAsSb/InGaAsSb multiple quantum well ridge waveguide semiconductor laser in room temperature[J]. Rare Metals, 2004, 28(3): 574-576. (in Chinese) |
[10] |
|
[11] |
|
[12] |
Guo Baozeng. The GaSb material characteristics preparation and application[J]. Semiconductor Optoelectronic, 1999, 20(2): 73-78. (in Chinese) |
[13] |
|
[14] |
Lin Chun. Antimonide lasers, detector materials, devices, and physical[D]. Shanghai: Shanghai Institute of Microsystem and Information Technology Research Institute, 2001. (in Chinese) |
[15] |
Tang Tian. Antimonide lasers, detectors MBE growth and physics research[D]. Shanghai: Shanghai Institute of Microsystem and Information Technology Research Institute, 2005. (in Chinese) |
[16] |
|
[17] |
|
[18] |
Li Aizhen. The research of molecular beam epitaxy of antimonide lasers, detector materials and device[J]. Materials Science, 2001, 15(2): 20-21. (in Chinese) |
[19] |
|
[20] |
Zhang Xiong. Investigation of devices and physics for antimonide lasers and photodiodes in mid-infrared[D].Shanghai: Shanghai Institute of Microsystem and Information Technology Research Institute, 2004. (in Chinese) |
[21] |
Wang Luwei. Development and application of semiconductor lasers[J]. Journal of Chengdu University, 2003, 22(3): 34-38. |