[1] Service R F. Will UV lasers beat the blues [J]. Science, 1997, 276: 895.
[2]
[3] Dabiran A M, Wowchak A M, Chow P P. Direct deposition of GaN-based photocathodes on microchannel plates [C]// SPIE, 2009, 7212, 721213-1-7.
[4]
[5]
[6] Zhang J, Zou J J, Wang X H. Comparison of the photoemission behaviour between negative electron affinity GaAs and GaN photocathodes [J]. Chin Phys B, 2011, 20(4): 048501-1-6 .
[7] Csorba P I. Recent advancements in the field of image intensification: the generation 3 wafer tube. [J] Appllied Optics, 1979, 18(14): 2440-2444.
[8]
[9]
[10] Pollen H K. Performance and reliability of third-generation image intensifiers[J]. AEEP, 1985, 4A(1): 61-69.
[11] Bender E J, Estrera J P. High reliability GaAg intensifer with unfilmed microchannel plate [C]//SPIE, 1999, 3729: 713-714.
[12]
[13]
[14] Duanmu Qingduo, Jiang Delong, Tian Jingquan, et al. MCP electron transmission film and characteristics of particles transmittance[J]. Acta Electronica Sinica, 2005, 33(5): 904- 907. (in Chinese)
[15] Li Ye, Fu Shencheng, Xiang Rong, et al. Simulation investigation on particle transmission characteristics of two different ion barrier films [J]. Journal of China Ordnance, 2008, 4: 268-271.
[16]
[17]
[18] Duanmu Qingduo, Li Ye, Lu Yaohua, et al. Electron multiplier of Si microchannel plate [J]. Acta Electronica Sinica, 2001, 29(12): 1680-1682. (in Chinese)
[19] Gao Xiumin, Cai Chunping. Secondary electron emission coefficient of MCP[J]. Journal of Applided Optics, 1998, 19 (4): 9-18. (in Chinese)
[20]
[21] Croitoru N, Seidman A, Yassin K. Secondary electron emission of ZnO sputtered films [J]. Physica Scripta, 1988, 37: 555-558.