温度对Si-MCP电化学腐蚀过程中空穴输运的影响

刘昕男; 端木庆铎; 王国政; 孙洪涛

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温度对Si-MCP电化学腐蚀过程中空穴输运的影响

刘昕男, 端木庆铎, 王国政, 孙洪涛

文章导航 > 红外与激光工程 > 2015 > 44(9): 2774-2777

刘昕男, 端木庆铎, 王国政, 孙洪涛. 温度对Si-MCP电化学腐蚀过程中空穴输运的影响[J]. 红外与激光工程, 2015, 44(9): 2774-2777.

引用本文:

刘昕男, 端木庆铎, 王国政, 孙洪涛. 温度对Si-MCP电化学腐蚀过程中空穴输运的影响[J]. 红外与激光工程, 2015, 44(9): 2774-2777.

Liu Xinnan, Duanmu Qingduo, Wang Guozheng, Sun Hongtao. Influences of temperature on the transport properties of electrochemical etching for silicon microchannel[J]. Infrared and Laser Engineering, 2015, 44(9): 2774-2777.

Citation:

Liu Xinnan, Duanmu Qingduo, Wang Guozheng, Sun Hongtao. Influences of temperature on the transport properties of electrochemical etching for silicon microchannel[J]. Infrared and Laser Engineering, 2015, 44(9): 2774-2777.

温度对Si-MCP电化学腐蚀过程中空穴输运的影响

1.
长春理工大学理学院,吉林长春 130022

基金项目:

国家自然科学基金(61107027,61077024)

详细信息

作者简介:
刘昕男(1989-),男,硕士生,主要从事硅微通道电化学腐蚀机理方面的研究。Email:liuxinnan1989@126.com

中图分类号: TN223

Influences of temperature on the transport properties of electrochemical etching for silicon microchannel

1.
School of Science,Changchun University of Science and Technology,Changchun 130022,China

摘要: 在电化学腐蚀硅微通道这一工艺过程中,温度是其中一个很重要的影响因素。通过研究温度对电化学腐蚀硅微通道过程中空穴输运的影响,加深对电化学腐蚀硅微通道这一过程的认识。利用电化学光照辅助阳极氧化法以n型(100)晶向单晶硅为研究对象,设计实验,得到硅微通道阵列在不同温度条件下的I-V特性扫描曲线、孔道的形貌以及孔道的深度;根据晶体中的散射机制的相关原理,研究了温度与载流子迁移率和扩散系数之间的关系;根据实验,得到了暗电流与温度的关系。最后通过对上述实验结果的分析,得出温度越低由空穴输运产生的空穴电流密度就越低,同时暗电流的值也越低,在较低温度下通过电化学腐蚀法制备的硅微通道结构形貌较好。
- 硅微通道 /
- 电化学腐蚀 /
- 空穴输运 /
- 迁移率
Abstract: It is widely acknowledged that the temperature plays a crucial role in the process of electrochemical etching Si microchannel. Therefore, by studying the influences of temperature on the hole transportation during the electrochemical corrosion process, better understanding about the process of electrochemical etching Si microchannel can be expected. Using n-type monocrystalline silicon with (100) crystallographic orientation as the research subject, an electrochemical light assisted anode oxidation method was devised for getting the I-V curves, the morphology and the depth of microchannel at the different temperature. According to the relevant principles of the scattering mechanism in the crystal, the relationships between the temperature and the carrier mobility and the diffusion coefficient were also studied and the relationship between the temperature and the dark current was finally found. Based on the further analysis regarding to the above results, it is concluded that the lower temperature caused the less current density produced by the hole transportation and the lower value of dark current. Thus, the well-defined microchannels can be achieved by using the electrochemical corrosion method at low temperature.
- silicon microchannel /
- electrochemical etching /
- transport of hole /
- carrier mobility

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温度对Si-MCP电化学腐蚀过程中空穴输运的影响

1. 长春理工大学理学院,吉林长春 130022

作者简介:
刘昕男(1989-),男,硕士生,主要从事硅微通道电化学腐蚀机理方面的研究。Email:liuxinnan1989@126.com

收稿日期: 2015-01-13
修回日期: 2015-02-18
刊出日期: 2015-09-25

基金项目:

国家自然科学基金(61107027,61077024)

中图分类号: TN223

关键词:

摘要: 在电化学腐蚀硅微通道这一工艺过程中,温度是其中一个很重要的影响因素。通过研究温度对电化学腐蚀硅微通道过程中空穴输运的影响,加深对电化学腐蚀硅微通道这一过程的认识。利用电化学光照辅助阳极氧化法以n型(100)晶向单晶硅为研究对象,设计实验,得到硅微通道阵列在不同温度条件下的I-V特性扫描曲线、孔道的形貌以及孔道的深度;根据晶体中的散射机制的相关原理,研究了温度与载流子迁移率和扩散系数之间的关系;根据实验,得到了暗电流与温度的关系。最后通过对上述实验结果的分析,得出温度越低由空穴输运产生的空穴电流密度就越低,同时暗电流的值也越低,在较低温度下通过电化学腐蚀法制备的硅微通道结构形貌较好。

English Abstract

Influences of temperature on the transport properties of electrochemical etching for silicon microchannel

1. School of Science,Changchun University of Science and Technology,Changchun 130022,China

Received Date: 2015-01-13
Rev Recd Date: 2015-02-18
Publish Date: 2015-09-25

Keywords:

Abstract: It is widely acknowledged that the temperature plays a crucial role in the process of electrochemical etching Si microchannel. Therefore, by studying the influences of temperature on the hole transportation during the electrochemical corrosion process, better understanding about the process of electrochemical etching Si microchannel can be expected. Using n-type monocrystalline silicon with (100) crystallographic orientation as the research subject, an electrochemical light assisted anode oxidation method was devised for getting the I-V curves, the morphology and the depth of microchannel at the different temperature. According to the relevant principles of the scattering mechanism in the crystal, the relationships between the temperature and the carrier mobility and the diffusion coefficient were also studied and the relationship between the temperature and the dark current was finally found. Based on the further analysis regarding to the above results, it is concluded that the lower temperature caused the less current density produced by the hole transportation and the lower value of dark current. Thus, the well-defined microchannels can be achieved by using the electrochemical corrosion method at low temperature.