Design and calculation of absorption layer thickness on InP/InGaAs transferred-electron photocathode
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摘要: 采用基于密度泛函理论的第一性原理平面波赝势法计算了InP/InGaAs转移电子光阴极吸收层材料的电学结构和光学性质,交换关联能采用杂化泛函HSE06来描述。首先对闪锌矿结构GaAs材料能带图进行计算验证,接着建立标准InGaAs材料体结构模型,并对模型进行了动力学的自洽优化,在优化后的基础上进行了非自洽的计算,得到标准InGaAs材料的复介电函数,然后根据Kramers-Kronig关系推出标准InGaAs材料光吸收系数。最后,结合转移电子光阴极量子效率模型,在给定P型标准InGaAs材料非平衡少子扩散长度分别是0.8、1.0、1.2、1.4、1.6和2.0 mm的条件下,得到对能量在0.780 260~0.820 273 eV区间内、间距为0.002 eV的不同光子能量优化的InP/InGaAs转移电子光阴极吸收层厚度。Abstract: The electonic structure and optical properties of standard InGaAs material, which formed the absorption layer of transferred-electron InP/InGaAs photocathode, were studied based on the density functional theory, the exchange and correlation potential energy was described by Heyd-Scuseria-Ernzerh(HSE06). First, the energy band structure of zinc blende GaAs was verified with this hybrid density functional, then the standard InGaAs bulk model was established, and dynamically optimized by self-consistent method before complex dielectric function was obtained, then the optical absorption coefficient was derivated from Kramers-Kronig relation. Finally, under the estimation of P-type standard InGaAs unequilibrium minority carriers effusion length were 0.8, 1.0, 1.2, 1.4, 1.6 and 2.0 m separately, combined with quantum efficiency formula of transferred-electron photocathode, the optimized absorption layer thickness of InP/InGaAs photocathode was derivated according to the photon energy between 0.780 260 eV and 0.820 273 eV with spacing 0.002 eV.
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[1] [2] Shi Yanli, Lv Yuzeng, Zhao Lusheng, et al. InxGa1-xAs low-light night vision devices[J]. Infrared and Laser Engineering, 2013, 42(12):3367-3372.(in Chinese) 史衍丽,吕玉增,赵鲁生,等. InxGa1-xAs高性能全固态数字化微光器件[J]. 红外与激光工程, 2013, 42(12):3367-3372. [3] Shi Yanli, Hu Rui, Zhang Weifeng, et al. Progess of InGaAs Solid-state Low-Light Device[J]. Infrared Technology, 2014, 36(2):81-88.(in Chinese) 史衍丽,胡锐,张卫锋,等. InGaAs固体微光器件研究进展[J]. 红外技术, 2014, 36(2):81-88. [4] [5] [6] Sinor Timothy W, Estrera Joseph P, Couch David G, et al. Night vision device, image intensifier and photomultiplier tube, transfer-electron photocathode for such, and method of making:united states patent, 6, 121, 612[P]. 2000-09-19. [7] [8] Sun Qiaoxia, Xu Xiangya, An Yingbo, et al. Numerical study on time response characteristics of InP/InGaAs/InP infrared photocathode[J]. Infrared and Laser Engineering, 2013, 42(12):3163-3167.(in Chinese) 孙巧霞,徐向晏,安迎波,等. InP/InGaAs/InP红外光电阴极时间响应特性的模拟研究[J]. 红外与激光工程, 2013, 42(12):3163-3167. [9] [10] Jia Zhenggen. Study of the InGaAs photocathode image intensifiers[J]. Infrared and Laser Engineering, 1999, 28(6):64-67.(in Chinese) 贾正根. InGaAs光电阴极像增强器研究[J]. 红外与激光工程, 1999, 28(6):64-67. [11] Parker T R, Fawcett A H, Phillips C C, et al. Gatable ultrafast field-assisted photoemission to form In0.5Ga0.5As heterostructures[J]. Appl Phys Lett, 1994, 65(21):2711-2713. [12] [13] Wang Wangping, Ma Jianyi. Material and fabrication process of near infrared response Ⅲ-Ⅴ compound semiconductor photocathode[J]. Optoelectronic Technology, 2013, 33(3):194-197.(in Chinese) 王旺平,马建一.近红外响应的Ⅲ-Ⅴ族半导体光电阴极材料及工艺[J]. 光电子技术, 2013, 33(3):194-197. [14] [15] Krukau Aliaksandr V, Vydrov Oleg A, Lzmaylov Artur F, et al. Influence of the exchange screening parameter on the performance of screened hybrid functionals[J]. J Chem Phys, 2006, 125:224106. [16] [17] [18] Joachim Paier, Martijn Marsman, Georg Kresse. Why does the B3LYP hybrid functional fail for metals[J]. J Chem Phys, 2007, 127:024103. [19] [20] Najwa Anua N, Ahmed R, Saeed M A, et al. DFT investigations of structural and electronic properties of gallium arsenide(GaAs)[C]//AIP Conference Proceedings, 2012, 1482:64. [21] [22] Goldberg Yu A , Shmidt Natalya M. Handbook series on semiconductor parameter[M]. Singapore:World Scientific Publishing Co Pte Ltd, 1999:55. [23] Zhao Jing. Research on optical and photoemission performances of transmission-mode GaAs photocathode[D]. Nanjing:Nanjing University of Science and Technoloy, 2013.(in Chinese) 赵静.透射式GaAs光电阴极的光学与光电发射性能研究[D]. 南京:南京理工大学, 2013. [24] [25] Jia Xinzhi. Semiconductor Photocathodes[M]. Beijing:Science Press, 2013:122.(in Chinese) 贾欣志.半导体光电阴极[M]. 北京:科学出版社, 2013:122. -
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