二极管非制冷红外探测器及其读出电路设计

祖秋艳; 王玮冰; 黄卓磊; 何鑫; 陈大鹏

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二极管非制冷红外探测器及其读出电路设计

祖秋艳, 王玮冰, 黄卓磊, 何鑫, 陈大鹏

文章导航 > 红外与激光工程 > 2013 > 42(7): 1680-1684

祖秋艳, 王玮冰, 黄卓磊, 何鑫, 陈大鹏. 二极管非制冷红外探测器及其读出电路设计[J]. 红外与激光工程, 2013, 42(7): 1680-1684.

引用本文:

祖秋艳, 王玮冰, 黄卓磊, 何鑫, 陈大鹏. 二极管非制冷红外探测器及其读出电路设计[J]. 红外与激光工程, 2013, 42(7): 1680-1684.

Zu Qiuyan, Wang Weibing, Huang Zhuolei, He Xin, Chen Dapeng. Uncooled diode infrared detector and design of its readout interface circuit[J]. Infrared and Laser Engineering, 2013, 42(7): 1680-1684.

Citation:

Zu Qiuyan, Wang Weibing, Huang Zhuolei, He Xin, Chen Dapeng. Uncooled diode infrared detector and design of its readout interface circuit[J]. Infrared and Laser Engineering, 2013, 42(7): 1680-1684.

二极管非制冷红外探测器及其读出电路设计

1.
中国科学院微电子研究所中国科学院微电子器件与集成技术重点实验室,北京 100029;
2.
江苏物联网研究发展中心,江苏无锡 214315

基金项目:

中国科学院微电子器件与集成技术重点实验室基金（Y2ZR16X001）

详细信息

作者简介:
祖秋艳（1987-），女，硕士，主要从事模拟集成电路设计方面的研究。Email：zuqiuyan@ime.ac.cn

中图分类号: TN43

Uncooled diode infrared detector and design of its readout interface circuit

1.
Key Laboratory of Microelectronics Devices &Integrated Technology,Institute of Microelectronics of Chinese Academy of Science,Beijing 100029,China;
2.
JiangSu R&D Center For Internet of Things,Wuxi 214315,China

摘要: 针对非制冷红外技术的低成本高性能应用，提出了基于SOI的二极管红外探测器及其读出电路的集成设计方案。阐述了二极管非制冷红外探测器的基本原理和工艺实现。对探测器的电学特性进行理论推导，得出读出电路的设计指标。采用连续时间自稳零电路结构实现探测器输出信号的低噪声低失调放大，采用级联滤波器以减弱开关非理想因素的影响，并采用片内电容采样保持，使得I/O引脚数较少，从而减小版图面积。采用spectre工具进行仿真，在CSMC 0.5 m 2P3M CMOS工艺下实现。结果表明：读出电路性能良好，闭环增益为65.8 dB，等效输入噪声谱密度为450 nV/Hz，等效输入失调电压100 V以内，功耗为5 mW，能实现探测器信号的准确读出。
- 二极管非制冷红外探测器 /
- 自稳零技术 /
- 低噪声 /
- 低失调 /
- 读出电路
Abstract: A design for integration of diode infrared detectors based on SOI and its readout interface circuit was presented for the low cost and high performance applications of uncooled infrared technology. Basic principle and fabrication technology of uncooled diode infrared detectors were elaborated. Through theoretical derivation of the electrical characteristics of detectors, circuit design specifications were given. The circuit used continuous time auto-zero technique to reduce offset voltage and suppress low frequency noise. It amplified the signals and cascaded a filter to decrease effects of non-ideal switches. Capacitors in chip were chosen to sample and hold, and as a result, the layout of the circuit had fewer I/O pads and smaller area. It was simulated using spectre tool and fabricated in CSMC 0.5 m 2P3M CMOS process. Experimental results show that this circuit has a good performance, achieving a closed-loop gain of 65.8 dB, equivalent input noise power spectral density of 450 nV/Hz, equivalent input offset voltage smaller than 100 V and power consumption of 5 mW, can accurately read out the outputs of detectors.
- uncooled diode infrared detector /
- auto-zero /
- low noise /
- low offset /
- readout interface circuit

[1]
[2]	Wang Weibing, Chen Dapeng, Ming Anjie, et al. Integration of uncooled diode infrared focal plane array[J]. Infrared and Laser Engineering, 2011, 40(6): 997-1000. (in Chinese) 王玮冰, 陈大鹏, 明安杰, 等. 二极管原理非制冷红外焦平面阵列的集成设计[J]. 红外与激光工程, 2011, 40(6): 997-1000.
[3]
[4]	He Wei, Chen Dapeng, Ming Anjie, et al. Diode infrared detectors based on SOI Si wafers[J]. Nanoelectronic Device Technology, 2009, 46(9): 525-529. (in Chinese) 何伟, 陈大鹏, 明安杰, 等. 基于SOI Si片的二极管红外探测器[J]. 微纳器件与技术, 2009, 46(9): 525-529.
[5]	Witte Johan F, Makinwa KOFI A A, Huijsing Johan H. A CMOS chopper offset-stabilized opamp[J]. IEEE J Solid-State Circuits, 2007, 42(7): 360-363.
[6]
[7]
[8]	Enz C C, Temes G C. Circuit techniques for reducing the effects of opamp imperfections: autozeroing, correlated double sampling, and chopper stabilization[J]. IEEE, 1996, 84(11): 1584-1614.
[9]	Behzad Razavi. Design of Analog CMOS Integrated Circuits[M]. Boston: McGraw-Hill, 2001: 376-389.
[10]
[11]	Daniel Dzahini, Hamid Ghazlane. Auto-zero stabilized CMOS amplifiers for very low voltage or current offset[C]//IEEE Nuclear Science Symposium, 2003(1): 6-10.
[12]
[13]	Finvers Ivars G, Haslett James W, Finvers Ivars G, et al. Noise analysis of a continuous-time auto-zeroed amplifier[J]. IEEE Trans on Circuits and Systems, 1996, 43(12): 791-800.

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二极管非制冷红外探测器及其读出电路设计

1. 中国科学院微电子研究所中国科学院微电子器件与集成技术重点实验室,北京 100029;

2. 江苏物联网研究发展中心,江苏无锡 214315

作者简介:
祖秋艳（1987-），女，硕士，主要从事模拟集成电路设计方面的研究。Email：zuqiuyan@ime.ac.cn

收稿日期: 2012-11-07
修回日期: 2012-12-10
刊出日期: 2013-07-25

基金项目:

中国科学院微电子器件与集成技术重点实验室基金（Y2ZR16X001）

中图分类号: TN43

关键词:

摘要: 针对非制冷红外技术的低成本高性能应用，提出了基于SOI的二极管红外探测器及其读出电路的集成设计方案。阐述了二极管非制冷红外探测器的基本原理和工艺实现。对探测器的电学特性进行理论推导，得出读出电路的设计指标。采用连续时间自稳零电路结构实现探测器输出信号的低噪声低失调放大，采用级联滤波器以减弱开关非理想因素的影响，并采用片内电容采样保持，使得I/O引脚数较少，从而减小版图面积。采用spectre工具进行仿真，在CSMC 0.5 m 2P3M CMOS工艺下实现。结果表明：读出电路性能良好，闭环增益为65.8 dB，等效输入噪声谱密度为450 nV/Hz，等效输入失调电压100 V以内，功耗为5 mW，能实现探测器信号的准确读出。

English Abstract

Uncooled diode infrared detector and design of its readout interface circuit

1. Key Laboratory of Microelectronics Devices &Integrated Technology,Institute of Microelectronics of Chinese Academy of Science,Beijing 100029,China;

2. JiangSu R&D Center For Internet of Things,Wuxi 214315,China

Received Date: 2012-11-07
Rev Recd Date: 2012-12-10
Publish Date: 2013-07-25

Keywords:

Abstract: A design for integration of diode infrared detectors based on SOI and its readout interface circuit was presented for the low cost and high performance applications of uncooled infrared technology. Basic principle and fabrication technology of uncooled diode infrared detectors were elaborated. Through theoretical derivation of the electrical characteristics of detectors, circuit design specifications were given. The circuit used continuous time auto-zero technique to reduce offset voltage and suppress low frequency noise. It amplified the signals and cascaded a filter to decrease effects of non-ideal switches. Capacitors in chip were chosen to sample and hold, and as a result, the layout of the circuit had fewer I/O pads and smaller area. It was simulated using spectre tool and fabricated in CSMC 0.5 m 2P3M CMOS process. Experimental results show that this circuit has a good performance, achieving a closed-loop gain of 65.8 dB, equivalent input noise power spectral density of 450 nV/Hz, equivalent input offset voltage smaller than 100 V and power consumption of 5 mW, can accurately read out the outputs of detectors.