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利用微纳结构实现对红外探测器光电性能的多维度调控及其机理研究是当前红外探测器研究的前沿,也是未来新一代红外探测器发展的重要方向。文中根据增强红外探测器的微纳结构特点和增强机理的不同,从介质型、表面金属型、三维等离子腔体型等方面概述了基于微纳结构增强的红外探测器的最新研究进展,阐述了微纳结构增强探测器性能的机理及主要方法,不同探测器的结构类型、原理以及关键指标总结如表1所示。
表 1 微纳结构增强型红外探测器分类和进展
Table 1. Classification and progress of micro-nano structure enhanced infrared detectors
Structure type Principle Wavelength
/μmResponsivity/(A/W) D*/cm·Hz1/2·W−1
DielectricSilicon substrate Increasing the effective propagation path by multiple reflections and scatterings 0.8-1.8[19-23] 0.91[19] 1.25×1011 [21] HgCdTe 1-5[24] 1-2[24] NETD:50 mK[24] Nanowires 1-1.65[26] 1.5[26] 2.52×1014 [26]
Surface metalMeta-surface SPP and LSP are excited at resonant wavelength to improve optical field density and enhance the absorption; 3-12[34-37] 7 [37] 7.4×1010 [37] LSP hot electrons 1.2~1.6[43] 8×10-6[43] 2.4×107 [46] SPP hot electrons 0.8-1.6[45] 9×10-2[45] 4.38 ×1011[45]
3D plasma cavitySemi-conductor cavity Strong local enhancement and near-field coupling effect in the absorption layer of multi-layer cavity 4-11[51] 2[51] 6.06 ×1010 [51] Quantum well cavity 11-14[52] 0.6[52] 8.52 ×109 [52] 2D material cavity 3-14[54-56] 0.32[55] —— 尽管近年来人们在微纳结构增强红外探测器性能方面开展了系列研究,并取得了阶段性进展,但微纳结构红外探测器件仍面临一些困难和挑战亟需克服。
(1)工艺的兼容性问题。微纳结构的制备在实验室可采用电子束光刻(EBL)和聚焦离子束光刻(FIB)等加工工艺,但复杂的结构在向传统半导体生产线导入时,由于材料、镀膜、光刻、刻蚀等工艺的兼容性问题,在产品化过程中面临较大挑战。
(2)性能的颠覆性不够。微结构红外探测器的响应波段、响应度、噪声、响应速度等性能指标之间依然存在相互制约关系,虽然特定的某个性能可以通过优化设计进行提升,但一般会引起综合性能的降低,导致器件性能的颠覆性和综合竞争力不足。
(3)自适应能力有待提升。微纳结构的材料和结构一旦确定,其功能往往也固定下来。现有的微纳结构增强型红外探测器或功能单一,或响应光谱受限,面临复杂应用场景时动态调节能力和适应性还达不到预期。
围绕上述问题,微纳结构增强型红外探测器件在未来发展中需要重点关注以下研究方向:
(1)与CMOS兼容的微结构探测器件结构设计方法与加工工艺。在原有数字CMOS工艺基础上研发适合微纳结构红外探测器的深亚微米CMOS工艺,优化工艺流程,提高探测器与运算电路集成的工艺兼容性,为基于商用CMOS工艺的微纳结构红外光电探测器的实现提供解决方案。
(2)同时具备宽波段、高灵敏度、低噪声和高响应速度等综合性能的微纳结构红外探测技术。在增强微纳结构与入射光场宽光谱上相互作用,提高光吸收效率和光谱响应带宽的基础上,同时抑制暗电流抑制,提升探测器响应速度和灵敏度,全面提升器件的综合性能。
(3)响应光谱等性能具有动态调控能力的自适应型器件。拓展微结构红外探测器件响应光谱频率的动态选择范围,并将电子逻辑处理、智能控制和运算存储等多种功能模块高度集成,增加探测器的灵活性和适用性,对于微结构红外探测器的设计和应用具有重要意义。
从实现途径上来说,主要是研发新工艺方法、引入新物理机理和采用新材料/新设计。在研发新工艺方法方面,可变电容、浅沟槽隔离和深n阱的引入将克服传统CMOS工艺的局限性,减少噪声耦合并隔离串扰,使亚微米CMOS工艺更兼容微纳结构红外探测器的加工;重掺型等离子结构全外延生长法的提出将为增强微纳结构与红外探测器的兼容性提供一种有效方式,有望实现了对探测器性能和成本的兼顾。在引入新物理机理方面,等离激元热电子注入、拓扑光子学和人工智能深度学习与微纳结构设计的相互结合将为综合性能颠覆性提升的微纳结构红外探测器的实现提供了新的可能。在采用新材料和新设计方面,压控、温控和相变等材料的引入则能实现对微纳结构探测器光谱响应的动态调控,智能处理芯片片内集成、读出电路三维垂直互联和高效能稀疏神经网络等技术的引入将有望实现感算一体的多功能微纳结构探测器,提升其在各种应用场景的适应性。
可以预见,随着未来探测器新材料、新结构、新机理的深入研究和系统集成工艺的不断进步,微纳结构增强型红外探测器将展现出极具前景的应用潜力,为高集成度、高性能和低成本的红外探测系统提供新的解决方案。
Research progress of micro-nano structures enhanced infrared detectors (Invited)
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摘要: 红外探测器在军事侦查、遥感、通信、精确制导和航空航天等领域发挥着关键作用,受到世界各国长期关注,具有重要的研究价值和应用前景。微纳结构与传统半导体探测器集成后能够有效提高光子耦合效率和等效光程,突破传统体材料的吸收极限,提高光电器件的量子效率并降低器件的暗电流,为高性能红外探测器的研究提供了全新的技术手段。文中围绕近年来各种不同类型的微纳结构增强型红外探测器的研究展开综述。首先,介绍了微纳结构增强型红外探测器的基本原理,根据微纳结构的材料和功能不同,进行了分类和对比;其次,分别从介质型、表面金属型和三维等离子腔型等方面对微纳结构在红外探测器上的研究进展进行了阐述;最后,对基于微纳结构增强型红外探器的发展趋势进行了总结和展望。Abstract: Infrared detectors play an important role in the areas of military investigation, remote sensing, communication, precision guidance and aerospace, which have been concerned by the world for a long time and have high research value and good application prospect. The integration of micro-nano structures and traditional semiconductor detector can effectively improve the photon coupling efficiency and equivalent optical path, exceed the absorption limit of traditional bulk materials, improve the quantum efficiency of photoelectric devices and reduce the dark current of devices, providing a new technical means for the research of high-performance infrared detectors. Various types of enhanced infrared photodetectors with micro-nano structures were reviewed in this paper. Firstly, the basic principle of performance enhancd infrared detectors with micro-nano structures were introduced. According to the different materials and functions of micro-nano structures, it was classified and compared; Secondly, the research progress of the above micro-nano structures in infrared detectors were systematically demonstrated from the aspects of dielectric type, surface metal type and 3D plasma cavity type. Finally, the development trend of infrared detector based on micro-nano structure enhancement was prospected.
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Key words:
- infrared detection /
- micro-nano structure /
- light trapping /
- local enhancement /
- plasma plasmon
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图 1 带有微孔阵列结构的硅基底红外探测器[19-21];(a)带有微孔阵列结构的锗硅光电器件的示意图[19];(b)锗硅器件在1 200~1 800 nm波段的外量子效率增强系数与响应度[19];(c)带有微孔阵列结构的硅单光子雪崩探测器的示意图[20];(d)不同尺寸硅单光子雪崩器件的外量子效率[20]共形石墨烯/硅纳米孔探测器的示意图[21];(f)测试得到的硅纳米孔、石墨烯/硅和共形石墨烯/硅纳米孔探测器的光电响应[21]
Figure 1. Infrared detectors with micro-holes on silicon substrates[19-21]; (a) Schematic diagram of Si-Ge optoelectronic device with micro-hole array structures[19]; (b) External quantum efficiency enhancement coefficient and responsivity in the 1 200-1 800 nm band of the Si-Ge device[19];(c) Schematic diagram of a silicon single-photon avalanche detector with micro-hole array structures[20]; (d) External quantum efficiency of devices of different sizes[20]; (e) Schematic diagram of conformal graphene/silicon nanopore detector[21] ; (f) Photoelectric response of silicon nanopore, graphene/silicon and conformal graphene/silicon nanopore detectors[21]
图 2 (a)集成微纳小孔结构的硅光电二极管的示意图[22];(b)光电二极管中集成的不同形状孔洞的SEM图,包括方孔、六角孔、圆柱形和漏斗形[22];(c)光电二极管有源区域的扫描电子显微镜图片[22];(d)集成微结构的硅光电探测器的示意图[23];(e)漏斗型和反向金字塔型陷光结构的顶部和横截面视图[23];(f)外量子效率与纳米孔数量的关系[23]
Figure 2. (a) A schematic diagram of a silicon photodiode integrated with a micro-holes[22]; (b) SEM images of holes of different shapes integrated in the photodiode, including square holes, hexagonal holes, cylindrical and funnel shapes[22]; (c) Scanning electron microscope picture of the active area of the photodiode[22]; (d) A schematic diagram of a silicon photodetector with integrated micro structures[23]; (e) Top and cross-sectional views of the funnel-shaped and inverted pyramid-shaped light trapping structures[23]; (f) Relationship between the external quantum efficiency and the number of nano-holes[23]
图 4 不同类型的纳米柱近红外光电探测器的结构及光电特性[26-29]。(a)硅纳米线/金纳米颗粒/石墨烯探测器的I-V曲线和器件结构[26];(b)硅纳米线阵列/钙钛矿光电探测器的示意图(横截面图和850 nm入射光零偏压下的时间响应曲线)[27];(c) PbSe2/GeNcs阵列异质结光电探测器的示意图(锗纳米锥阵列的横截面SEM图和I-V曲线图)[28];(d) ZnO/MoS2光电探测器的结构示意图(SEM图和时间-电流响应)[29]
Figure 4. Structure and photoelectric characteristics of different types of nanorods near infrared photodetectors[26-29]. (a) I-V curve of the SiNW/Au/Graphene detector and the device structure[26]; (b) Schematic diagram of the silicon nanowire array/perovskite photodetector(cross-sectional view and 850 nm incident light time response curve under zero bias)[27]; (c) Schematic diagram of PbSe2/GeNcs array heterojunction photodetector(cross-sectional SEM image of germanium nanocone array and I-V curve diagram)[28]; (d) Schematic diagram of the ZnO/MoS2 detector(SEM images and time-current response)[29]
图 5 不同类型的表面金属微纳结构增强的红外探测器的结构与性能[34-37]。(a)非对称型红外等离子体探测器的结构示意图(SEM图和电场强度增强系数)[34];(b)十字星型等离子体双色红外探测器的结构示意图(SEM图和反射率曲线)[35];(c)方孔型等离子体长波红外探测器的结构示意图(SEM图和吸收增强系数曲线)[36];(d)等离子腔量子阱红外探测器的结构示意图(SEM图和吸收增强光谱)[37]
Figure 5. Structures and performances of enhanced infrared detectors with different types of surface metal microstructures[34-37]. (a) Structure diagram of the aysmmetric infrared plasma detector(SEM image and electric field intensity enhancement coefficient)[34] ; (b) Schematic diagram of the two-color infrared detector with cross stars(SEM image and reflection curve)[35];(c) Schematic diagram of the square-hole plasma long-wave infrared detector(SEM image and curve of absorption enhancement factor)[36]; (d) Schematic diagram of the plasma cavity quantum well infrared detector(SEM image and absorption enhancement spectrum)[37]
图 6 几类金属超表面热电子红外探测器的结构及其性能[43-46]。(a)局域等离激元热电子注入型的光电探测器的结构示意图、SEM图和光电性能[43];(b)基于表面等离子体的等离激元热电子光电探测器的结构示意图和量子效率曲线[44]; (c)全硅热电子型光电探测器结构示意图和光谱响应[45]; (d)一种宽带热电子光电探测器的结构示意图和吸收率曲线[46]
Figure 6. Structures and performance of several types of hot-electron infrared detectors with metal meta-surface[43-46] . (a) Structure diagram, SEM image and photoelectrical properties of local plasmon thermal electron injection photodetector[43]; (b) Structure diagram and quantum efficiency curve of plasmon thermoelectron photodetector based on surface plasma[44]; (c) Schematic diagram and spectral response of all-silicon thermoelectronic photodetector[45]; (d) Structure diagram and absorption curve of a wide band thermo-electron photodetector[46]
图 8 二维材料的等离子腔吸收增强结构和性能[54-56]。(a)石墨烯的等离子腔结构示意图及吸收曲线[54];(b)集成石墨烯薄膜的混合光栅法布里-珀罗结构示意图及吸收曲线[55];(c)黑磷的金纳米结构离子腔示意图和吸收曲线[56]
Figure 8. Structures and performance of plasmonic cavity enhanced 2D materials infrared detectors with micro-structure [54-56]. (a) Schematic diagram of plasma cavity structure and absorption curve of graphene[54]; (b) Schematic diagram and absorption curve of hybrid grating Fabry-Perot structure integrated with graphene film[55]; (c) Schematic diagram of gold nanostructure plasmonic cavity and absorption curve of black phosphorus[56]
图 9 三种重掺半导体型等离子体探测器的结构和性能[61-63]。(a)重掺等离子腔探测器结构、电场分布及其EQE 曲线[61] ;(b) 超薄增强吸收长波红外探测器示意图(势垒层能带和吸收率曲线)[62]; (c) 单周期GMR 探测器示意图(横截面的扫描电子显微照片和探测率曲线)[63]
Figure 9. Structures and performance of three kinds of heavily doped semiconducting plasma detectors[61-63]. (a) Structures of heavily doped plasmonic detector, distribution of electrical field and curve of EQE[61]; (b) Schematic diagram of ultra-thin enhanced absorption long-wave infrared detector(band-structure schematics and the absorption curve)[62] ; (c) Schematic diagram of a single-cycle GMR detector (Scanning electron micrographs and detectability curves of cross-sections)[63]
表 1 微纳结构增强型红外探测器分类和进展
Table 1. Classification and progress of micro-nano structure enhanced infrared detectors
Structure type Principle Wavelength
/μmResponsivity/(A/W) D*/cm·Hz1/2·W−1
DielectricSilicon substrate Increasing the effective propagation path by multiple reflections and scatterings 0.8-1.8[19-23] 0.91[19] 1.25×1011 [21] HgCdTe 1-5[24] 1-2[24] NETD:50 mK[24] Nanowires 1-1.65[26] 1.5[26] 2.52×1014 [26]
Surface metalMeta-surface SPP and LSP are excited at resonant wavelength to improve optical field density and enhance the absorption; 3-12[34-37] 7 [37] 7.4×1010 [37] LSP hot electrons 1.2~1.6[43] 8×10-6[43] 2.4×107 [46] SPP hot electrons 0.8-1.6[45] 9×10-2[45] 4.38 ×1011[45]
3D plasma cavitySemi-conductor cavity Strong local enhancement and near-field coupling effect in the absorption layer of multi-layer cavity 4-11[51] 2[51] 6.06 ×1010 [51] Quantum well cavity 11-14[52] 0.6[52] 8.52 ×109 [52] 2D material cavity 3-14[54-56] 0.32[55] —— -
[1] Wang J, Fang H, Wang X, et al. Recent progress on localized field enhanced two-dimensional material photodetectors from ultraviolet-visible to infrared [J]. Small, 2017, 13(35): 1700894. doi: 10.1002/smll.201700894 [2] Guan X, Yu X, Periyanagounder D, et al. Recent progress in short-to long-wave infrared photodetection using 2D materials and heterostructures [J]. Advanced Optical Materials, 2021, 9: 2001708. doi: 10.1002/adom.202001708 [3] Hu X, Wu J, Wu M, et al. Recent developments of infrared photodetectors with low-dimensional inorganic nanostructures [J]. Nano Research, 2021,15(2): 1-13. [4] Jiang F, Shi M, Zhou J, et al. Integrated photonic structure enhanced infrared photodetectors [J]. Advanced Photonics Research, 2021, 2(9): 2000187. doi: 10.1002/adpr.202000187 [5] Zhang T, Wang S J, Zhang X Y, et al. Recent progress on nanostructure-based broadband absorbers and their solar energy thermal utilization [J]. Frontiers of Chemical Science and Engineering, 2021, 15(1): 35-48. doi: 10.1007/s11705-020-1937-6 [6] Zhuge F, Zheng Z, Luo P, et al. Nanostructured materials and architectures for advanced infrared photodetection [J]. Advanced Materials Technologies, 2017, 2(8): 1700005. doi: 10.1002/admt.201700005 [7] Anguita J V, Ahmad M, Haq S, et al. Ultra-broadband light trapping using nanotextured decoupled graphene multilayers [J]. Science Advances, 2016, 2(2): e1501238. doi: 10.1126/sciadv.1501238 [8] Wang H, Zhen H, Li S, et al. Self-rolling and light-trapping in flexible quantum well–embedded nanomembranes for wide-angle infrared photodetectors [J]. Science Advances, 2016, 2(8): e1600027. doi: 10.1126/sciadv.1600027 [9] Lin X, Ding Z Y, Wang W P, et al. Investigation on the operation enhancement of HgCdTe photon-trapping detector [J]. Laser & Infrared, 2017, 47(12): 1510-1515. (in Chinese) [10] Lee S C, Krishna S, Brueck S R J, et al. Light direction-dependent plasmonic enhancement in quantum dot infrared photodetectors [J]. Applied Physics Letters, 2010, 97(2): 21112. doi: 10.1063/1.3454776 [11] Oay A, Avt A, Vvk A, et al. Planar plasmonic nanocavity for efficient enhancement of photoluminescence of molecular emitters [J]. Optical Materials, 2019, 94: 348-355. doi: 10.1016/j.optmat.2019.06.015 [12] Lee S C, Krishna S, Brueck S R J, et al. Beyond the yablonovitch limit: Trapping light by frequency shift [J]. Applied Physics Letters, 2011, 98(7): 71107. doi: 10.1063/1.3554436 [13] Prajapati A, Chauhan A, Keizman D, et al. Approaching the Yablonovitch limit with free-floating arrays of subwavelength trumpet non-imaging light concentrators driven by extraordinary low transmission [J]. Nanoscale, 2019, 11(8): 3681-3688. doi: 10.1039/C8NR10381J [14] Yokogawa S, Oshiyama I, Ikeda H, et al. IR sensitivity enhancement of CMOS Image Sensor with diffractive light trapping pixels [J]. Sci Rep, 2017, 7(1): 3832. doi: 10.1038/s41598-017-04200-y [15] Fang Z. Plasmonic silicon quantum dots extend photodetection into mid-infrared range [J]. Science Bulletin, 2017, 62(21): 8-9. [16] Tong J, Tobing L, Luo Y, et al. Single plasmonic structure enhanced dual-band room temperature infrared photodetection [J]. Scientific Reports, 2018, 8(1): 1548. doi: 10.1038/s41598-018-20028-6 [17] Hu W D, Ge H, Xie R, et al. Skin effect photon-trapping enhancement in infrared photodiodes [J]. Optics Express, 2021, 29(15): 22823-22837. doi: 10.1364/OE.427714 [18] Ye Z H, Zhang P, Li Y, et al. Photon trapping photodiode design in HgCdTe mid-wavelength infrared focal plane array detectors [J]. Optical & Quantum Electronics, 2014, 46(10): 1385-1390. [19] Cansizoglu H, Bartolo-Perez C, Gao Y, et al. Surface-illuminated photon-trapping high-speed Ge-on-Si photodiodes with improved efficiency up to 1700 nm [J]. Photonics Research, 2018, 6(7): 734-742. doi: 10.1364/PRJ.6.000734 [20] Zang K, Jiang X, Huo Y, et al. Silicon single-photon avalanche diodes with nano-structured light trapping [J]. Nature Communications, 2017, 8(1): 628. doi: 10.1038/s41467-017-00733-y [21] Yang J, Tang L, Luo W, et al. Light trapping in conformal graphene/silicon nanoholes for high performance photodetectors [J]. ACS Applied Materials & Interfaces, 2019, 11(33): 30421-30429. [22] Gao Y, Cansizoglu H, Polat K G, et al. Photon-trapping microstructures enable high-speed high-efficiency silicon photodiodes [J]. Nature Photonics, 2017, 11(5): 301-308. doi: 10.1038/nphoton.2017.37 [23] Bartolo-Perez C, Qarony W, Ghandiparsi S, et al. Maximizing absorption in photon trapping ultra-fast silicon photodetectors [J]. Advanced Photonics Research, 2021, 2(6): 2000190. doi: 10.1002/adpr.202000190 [24] Wehner J, Smith E, Venzor G M, et al. HgCdTe photon trapping structure for broadband mid-wavelength infrared absorption [J]. Journal of Electronic Materials, 2011, 40(8): 1840-1846. doi: 10.1007/s11664-011-1703-0 [25] Schuster J, Bellotti E. Numerical simulation of crosstalk in reduced pitch HgCdTe photon-trapping structure pixel arrays [J]. Optics Express, 2013, 21(12): 14712-14727. doi: 10.1364/OE.21.014712 [26] Luo L B, Zeng L H, Chao X, et al. Light trapping and surface plasmon enhanced high-performance NIR photodetector [J]. Scientific Reports, 2014, 4(1): 3914. [27] Linbao L, Di W, Chao X, et al. PdSe2 multilayer on germanium nanocones array with light trapping effect for sensitive infrared photodetector and image sensing application [J]. Advanced Functional Materials, 2019, 29(22): 1900849. [28] Liu J Q, Yang G, Wu G, et al. Silicon/perovskite core-shell heterojunctions with light trapping effect for sensitive self-driven NIR photodetectors [J]. ACS Applied Materials & Interfaces, 2018, 10(33): 27850-27857. [29] Ning L, Jiang T H, Shao Z B, et al. Light-trapping enhanced ZnO-MoS2 core-shell nanopillar arrays for broadband ultraviolet-visible-near infrared photodetection [J]. Journal of Materials Chemistry C Materials for Optical & Electronic Devices, 2018, 6(26): 7077-7084. [30] Nordin L, Li K, Briggs A, et al. Enhanced emission from ultra-thin long wavelength infrared superlattices on epitaxial plasmonic materials [J]. Applied Physics Letters, 2020, 116(2): 021102. doi: 10.1063/1.5132311 [31] Yang J, Zhu Z, Zhang J, et al. Mie resonance induced broadband near-perfect absorption in nonstructured graphene loaded with periodical dielectric wires [J]. Optics Express, 2018, 26(16): 20174-20182. doi: 10.1364/OE.26.020174 [32] Meng J, Cadusch J J, Crozier K B. Plasmonic mid-infrared filter array-detector array chemical classifier based on machine learning [J]. ACS Photonics, 2021, 8(2): 648-657. doi: 10.1021/acsphotonics.0c01786 [33] Nolde J A, Kim M, Kim C S, et al. Resonant quantum efficiency enhancement of midwave infrared nBn photodetectors using one-dimensional plasmonic gratings [J]. Applied Physics Letters, 2015, 106(26): 261109. doi: 10.1063/1.4923404 [34] Cheng F, Yang X, Gao J. Ultrasensitive detection and characterization of molecules with infrared plasmonic metamaterials [J]. Scientific Reports, 2015, 5(1): 14327. doi: 10.1038/srep14327 [35] Mao F, Xie J, Xiao S, et al. Plasmonic light harvesting for multicolor infrared thermal detection [J]. Optics Express, 2013, 21(1): 295. doi: 10.1364/OE.21.000295 [36] Jessie R, Shenoi R V, Sanjay K, et al. Design of plasmonic photonic crystal resonant cavities for polarization sensitive infrared photodetectors [J]. Optics Express, 2010, 18(4): 3672-3686. doi: 10.1364/OE.18.003672 [37] Wei W, Bonakdar A, Mohseni H. Plasmonic enhanced quantum well infrared photodetector with high detectivity [J]. Applied Physics Letters, 2010, 96(16): 667. [38] Zheng B, Zhao H, Manjavacas A, et al. Distinguishing between plasmon-induced and photoexcited carriers in a device geometry [J]. Nature Communications, 2015, 6(1): 7797. doi: 10.1038/ncomms8797 [39] Xia F, Wang H, Xiao D, et al. Two-dimensional material nanophotonic [J]. Nature Photonics, 2014, 8(12): 899-907. doi: 10.1038/nphoton.2014.271 [40] Narang P, Sundararaman R, Atwater H A. Plasmonic hot carrier dynamics in solid-state and chemical systems for energy conversion [J]. Nanophotonics, 2016, 5(1): 96-111. doi: 10.1515/nanoph-2016-0007 [41] Brongersma M L, Halas N J, Nordlander P. Plasmon-induced hot carrier science and technology [J]. Nature Nanotechnology, 2015, 10(1): 25-34. doi: 10.1038/nnano.2014.311 [42] Wang W, Klots A, Prasai D, et al. Hot electron-based near-infrared photodetection using bilayer MoS2 [J]. Nano Letters, 2015, 15(11): 7440-7444. doi: 10.1021/acs.nanolett.5b02866 [43] Knight M W, Sobhani H, Nordlander P, et al. Photodetection with active optical antennas [J]. Science, 2011, 332(6030): 702-704. doi: 10.1126/science.1203056 [44] Chalabi H, Schoen D, Brongersma M L. Hot-electron photodetection with a plasmonic nanostripe antenna [J]. Nano Letters, 2014, 14(3): 1374-1380. doi: 10.1021/nl4044373 [45] Feng B, Zhu J, Bingrui L U, et al. Achieving infrared detection by all-Si plasmonic hot-electron detectors with high detectivity [J]. ACS Nano, 2019, 13(7): 8433-8441. [46] Li W, Valentine J. Metamaterial perfect absorber based hot electron photodetection [J]. Nano Letters, 2012, 14(6): 3510-3514. [47] Bouchon P, Koechlin C, Pardo F, et al. Wideband omni-directional infrared absorber with a patchwork of plasmonic nanoantennas [J]. Optics Letters, 2012, 37(6): 1038. doi: 10.1364/OL.37.001038 [48] Cui, Y X, Xu J, Fung K H, et al. A thin film broadband absorber based on multi-sized nanoantennas. [J]. Applied Physics Letters, 2011, 99(25): 253101. doi: 10.1063/1.3672002 [49] Feng R, Ding W, Liu L, et al. Dual-band infrared perfect absorber based on asymmetric T-shaped plasmonic array [J]. Optics Express, 2014, 22(S2): A335-A343. doi: 10.1364/OE.22.00A335 [50] Goldflam M, Kadlec E A, Olson B V, et al. Enhanced infrared detectors using resonant structures combined with thin type-II superlattice absorbers [J]. Applied Physics Letters, 2016, 109(25): 251103. doi: 10.1063/1.4972844 [51] Montoya J A, Tian Z B, Krishna S, et al. Ultra-thin infrared metamaterial detector for multicolor imaging applications [J]. Optics Express, 2017, 25(19): 23343. doi: 10.1364/OE.25.023343 [52] Jing Y L, Li Z F, Li Q, et al. Pixel-level plasmonic microcavity infrared photodetector [J]. Scientific Reports, 2016, 6(1): 25849. doi: 10.1038/srep25849 [53] Li J, Li J Z, Zhou H, et al. Plasmonic metamaterial absorbers upon strong coupling effects for small pixel infrared detector [J]. Optics Express, 2021, 29(15): 22907-22921. doi: 10.1364/OE.430156 [54] Guo S, Deng J, Zhou J, et al. Combined role of polarization matching and critical coupling in enhanced absorption of 2 D materials based on metamaterials [J]. Optics Express, 2021, 29(6): 9269-9282. doi: 10.1364/OE.419028 [55] Zhou K, Cheng Q, Lu L, et al. Dual-band tunable narrowband near-infrared light trapping control based on a hybrid grating-based Fabry–Perot structure [J]. Optics Express, 2020, 28(2): 1647-1656. doi: 10.1364/OE.383988 [56] Audhkhasi R, Povinelli M L. Gold-black phosphorus nano-structured absorbers for efficient light trapping in the mid-infrared [J]. Optics Express, 2020, 28(13): 19562-19570. doi: 10.1364/OE.398641 [57] Felts J R, Law S, Roberts C M, et al. Near-field infrared absorption of plasmonic semiconductor microparticles studied using atomic force microscope infrared spectroscopy [J]. Applied Physics Letters, 2013, 102(15): 152110. doi: 10.1063/1.4802211 [58] Law S, Liu R, Wasserman D. Doped semiconductors with band-edge plasma frequencies [J]. Journal of Vacuum Science & Technology B, 2014, 32(5): 052601. [59] Qian X, Vangala S, Wasserman D, et al. High-optical-quality nanosphere lithographically formed InGaAs quantum dots using molecular beam epitaxy assisted GaAs mass transport and overgrowth [J]. Journal of Vacuum Science & Technology B, 2010, 28(3): C3C9-C3C14. [60] Xu X, Kwon H, Finch S, et al. Reflecting metagrating-enhanced thin-film organic light emitting devices [J]. Applied Physics Letters, 2021, 118(5): 053302. doi: 10.1063/5.0034573 [61] Nordin L, Kamboj A, Petluru P, et al. All-epitaxial integration of long-wavelength infrared plasmonic materials and detectors for enhanced responsivity [J]. ACS Photonics, 2020, 7(8): 1950-1956. doi: 10.1021/acsphotonics.0c00659 [62] Wang S H, Yoon N, Kamboj A, et al. Ultra-thin enhanced-absorption long-wave infrared detectors [J]. Applied Physics Letters, 2018, 112(9): 091104. doi: 10.1063/1.5017704 [63] Kamboj A, Nordin L, Petluru P, et al. All-epitaxial guided-mode resonance mid-wave infrared detectors [J]. Applied Physics Letters, 2021, 118(20): 201102. doi: 10.1063/5.0047534