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Bi3+离子在晶格中的掺入,可以增强薄膜的磁光法拉第效应[10];Gd的掺入,可以降低薄膜的饱和磁化强度[11]。生长YIG常用的GGG衬底晶格常数为12.84 Å (1 Å=10−10 m),Bi与Gd的引入会引起晶格失配[12-14],选用晶格常数更大的SGGG衬底可以减小晶格失配,有利于薄膜长厚,而不引起脱落或开裂。通过传统液相外延法,以PbO-B2O3作为助溶剂,配方分子式为(YBiGd)3Fe5O12,主要生长参数如表1所示,样品厚度可以通过调节生长温度与生长时间控制。样品生长完毕后,通过划片机切成10 mm×10 mm的样品以备测试,晶体物相结构通过高分辨率X射线衍射仪(HRXRD, D1 Evolution, JVS, 德国)测试,使用原子力显微镜(AFM, SEIKO SPA-300 HV)对膜表面质量进行分析,使用振动样品磁力计(VSM,BHV525,IWATSH,日本)进行磁性能分析,利用实验室自建的法拉第测试系统对膜的磁光特性进行分析。
表 1 样品膜的主要生长参数
Table 1. Main growth parameters of sample films
Sample numbe Growth rate/
μm·min−1Thickness/
μmTemperature/
℃Rotation rate/
r·min−1Growth time/
min1 0.6 1.8 899-898 60 3 2 0.65 19.5 895-894 60 30 3 0.6 60 879-878 60 100 4 0.75 120 877-876 60 160
Characterization of single crystal Bi:YIG for microwave and optical communication
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摘要: 通过液相外延方法制备出单晶Bi和Gd取代YIG薄膜,并研究了其微波铁磁共振特性与红外磁光性能。测试结果表明,样品结晶质量较好,无多余物相,平均表面粗糙度0.4 nm,比饱和磁化强度值25 emu/g,饱和外磁场650 Oe左右。在0~20 GHz的频率范围内,铁磁共振线宽ΔH小于8 Oe,且频率与共振线宽呈线性关系。在红外1550 nm波长下,饱和状态的比法拉第转角约为0.1 (°)/μm,两片叠加条件下可以实现±45°法拉第旋转。在1550 nm左右透过率接近90%,吸收系数低于16 cm−1。该材料在红外磁光器件、微波通信器件方面具有重要的应用价值。Abstract: Single crystal Bi and Gd substituted YIG films were prepared by liquid phase epitaxy method, and their microwave and magneto-optical properties were studied. The results show that the crystal quality of the sample is good, and the average surface roughness is 0.4 nm. The special saturation magnetization is 25 emu/g, and the saturation external magnetic field is about 650 Oe. In the range of 0-20 GHz, the Ferromagnetic Resonance Linewidth ΔH is less than 8 Oe, and the frequency is linear with the linewidth ΔH. At the wavelength of 1550 nm, the specific Faraday rotation angle of saturation state is about 0.1 (°)/μm, and the Faraday rotation of ±45° can be achieved with the superposition of two pieces of films. At 1550 nm, the transmittance is close to 90% and the absorption coefficient is lower than 16 cm−1. It has important application value in infrared magneto-optic and microwave communication.
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Key words:
- magnetic-optic devices /
- ferromagnetic resonance /
- communication /
- Faraday effect /
- light absorption
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表 1 样品膜的主要生长参数
Table 1. Main growth parameters of sample films
Sample numbe Growth rate/
μm·min−1Thickness/
μmTemperature/
℃Rotation rate/
r·min−1Growth time/
min1 0.6 1.8 899-898 60 3 2 0.65 19.5 895-894 60 30 3 0.6 60 879-878 60 100 4 0.75 120 877-876 60 160 -
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