Research progress of infrared single-photon detection with high gain (Invited )
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摘要: 超灵敏单光子探测是光量子信息和量子调控领域发展的关键技术,实现高效率、超灵敏、低功耗以及低成本的单光子探测具有重要的科学意义和应用价值。与可见光波段的Si基单光子探测器相比,红外响应单光子探测器目前在成本和性能方面都存在较大差距,探索基于新材料和新机制的红外单光子探测技术是光电探测领域发展的迫切需求。近年来,低维材料由于其独特的物化性质,为研制高增益、室温工作和宽波段响应的探测器提供了新的可能,高性能低维材料光电探测技术也成为了当前红外探测领域的研究热点。文中首先回顾了传统雪崩类半导体红外光电探测器的基本原理,在此基础上,介绍了基于新型低维材料的雪崩机制光电探测技术的最新进展,之后讨论了光诱导栅压效应型光电探测器件的新型光增益放大机制,并描述了在该工作机制下相关低维材料红外探测器的基本结构和性能表现。最后展望了高增益红外单光子探测技术的未来发展方向和面临的挑战。Abstract: Ultra-sensitive single-photon detection is a key technology for the development of optical quantum information and quantum manipulation. It is of important scientific significance and application value to realize high-efficiency, high-sensitivity, low-power and low-cost single-photon photodetectors. There is still a large gap between visible single-photon detector based on silicon and infrared ones in terms of the cost and performance. Exploring the technology of infrared single-photon detection with novel materials and mechanism has become the urgent needs in the field of photodetection. In recent years, low-dimensional materials have offered a new possibility for realizing high-gain, room-temperature and broad-band photodetectors due to their unique physical and chemical properties. The research on the low-dimensional materials based photodetectors with good performance has also become a hot topic in the field of infrared photodetection. In this review, the basic principles of traditional avalanche infrared photodetectors were introduced firstly. On this basis, the latest development of avalanche devices based on novel low-dimensional materials was summarized. Then the new gain amplification mechanism of the photodetector based on photogating effect was discussed and the structure as well as the performance of the devices were reviewed. Finally, the future developing directions and challenges of the infrared single-photon detection technology were prospected.
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Key words:
- single photon /
- avalanche effect /
- low-dimensional materials /
- infrared photodetector
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图 3 (a) InGaAs-GaAs雪崩探测器在不同温度下的暗计数,插图为器件结构示意图,器件由InGaAs吸收层、GaAs倍增层和InGaP钝化壳层组成;(b)纳米线生长过程中的扫描电镜图像,比例尺为500 nm[21]
Figure 3. (a) Measured DCR at different temperatures of InGaAs-GaAs avalanche photodetector. The inset shows the schematic drawing of device composed of InGaAs absorption layer, GaAs avalanche layer, and InGaP passivation shell; (b) SEM images of nanowire growth after each layer. Scale bar 500 nm[21]
图 4 (a)基于BP的雪崩光电探测器结构;(b)不同电场强度下器件产生的光电流与波长的关系;(c)不同电场强度下器件工作机制,电场强度大于临界电场时,由于雪崩效应发生载流子倍增[26]
Figure 4. (a) Schematic of BP avalanche photodetector; (b) Photocurrent vs wavelength for different electric fields; (c) Operation principles of BP device at different electric fields. When E>Ecrit, carrier multiplication occurs due to the avalanche effect[26]
图 5 基于photogating效应的晶体管光电响应增益机制[33]
Figure 5. Schematic of photogating effect of the phototransistor with high gain
图 6 (a)室温高增益InAs纳米线光电探测器结构示意图和(b) photogating物理机制[35];(c)碲烯中红外高增益光电探测器原子力显微镜图像和不同波长下的光电流[37]
Figure 6. (a) Schematic diagram and (b) photogating mechanism of InAs nanowire photodetector with high gain at room temperature[35]; (c) AFM image of mid-infrared tellurene high-gain photodetector and the photocurrent at different incident wavelengths[37]
图 7 胶体PbS量子点和石墨烯复合结构光电晶体管(a)光学显微镜图片和(b)结构示意图,其中ITO、PbS和石墨烯在垂直方向形成光电二极管结构;(c)器件的响应度和外量子效率[44];Si量子点-石墨烯复合结构(d)光电响应机制示意图以及器件的(e)响应度和(f)宽光谱光电增益[45]
Figure 7. (a) Optical microscope image and (b) schematic of the phototransistor consisted of colloidal PbS QDs and graphene, in which ITO-PbS-graphene form photodiode in the vertical direction; (c) responsivity and EQE performance of the device[44]; (d) Schematic of photoresponse mechanism, (e) responsivity and (f) gain of the hybrid photoransistor based on Si QDs and graphene[45]
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