Frontiers and prospects of integrated microwave photonics (Invited)
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摘要:
微波光子学是一门融合了微波技术和光子技术的交叉学科,是研究光波和微波在媒质中的相互作用以及在光频域实现微波信号的产生、处理、传输及接收的微波光波融合系统。由于现有的微波光子系统大多由分立器件组成,在体积、功耗、稳定性、成本等方面仍有待提升,因此集成化是微波光子技术发展的必然趋势。文中探讨了微波光子集成技术面临的主要科学与技术问题,总结了该技术的发展现状和前沿研究进展,并对其未来发展前景进行了展望。
Abstract:Microwave photonics is an interdisciplinary subject of microwave engineering and photonics technology. It is a fused microwave and optical system that studies the interaction between optical and microwave signals in the medium and the generation, processing, transmission, and receiving of microwave signals in the optical domain. Integration is an inevitable trend of microwave photonics since the performances of current discrete devices-based microwave photonic systems are poor in terms of size, power consumption, stability and cost. The main scientific and technical issues of integrated microwave photonics were discussed, its development status and frontier research progresses were summarized, and an outlook of its future prospects was given.
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图 2 宽带低半波电压电光调制器。(a)传统铌酸锂调制器[22]; (b)薄膜铌酸锂调制器[23]; (c) 等离子体激元调制器[14, 21]; (d)高线性度InP和硅基电光调制器[24-26]
Figure 2. Electro-optic modulator with broad bandwidth and low half-wave voltage. (a) Traditional lithium niobate modulator[22]; (b) Thin-film lithium niobate modulator[23]; (c) Plasmonic modulator[14, 21]; (d) InP and silicon modulator with high linearity[24-26]
图 3 宽带高饱和光电探测器。(a) II-VI公司的光电探测器产品[27]; (b) InP光电探测器产品[28]; (c) InP on SOI光电探测器芯片[29]; (d) Ge on SOI光电探测器芯片[30]
Figure 3. Photodetector with high saturation power. (a) Product of photodetector by II-VI Incorporated[27]; (b) Chip of InP photodetector[28]; (c) Chip of InP on SOI photodetector[29]; (d) Chip of Ge on SOI photodetector[30]
图 4 基于路径选择延时切换的波束形成芯片。(a)氮化硅4通道5 bit延时芯片[31]; (b)二氧化硅8通道5.5 bit延时芯片[32]; (c)硅基8通道5 bit波束控制芯片[33]
Figure 4. Beamformer chips based on path selection to switch different delays. (a) Silicon nitride 5-bit delay chip with 4 channels[31]; (b) Silicon dioxide 5.5-bit delay chip with 8 channels[32]; (c) Silicon 5-bit beam control chip with 8 channels[33]
图 5 基于微环谐振腔色散调控的波束形成芯片。(a)氮化硅多波长可调延时芯片[34];(b) 氮化硅4通道可调延时芯片[35]; (c)硅基4通道波束控制芯片[36]
Figure 5. Beamformer chips based on dispersion tuning of microring resonators. (a) Silicon nitride multi-wavelength tunable delay chip[34]; (b) Silicon nitride tunable delay chip with 4 channels[35]; (c) Silicon beam control chip with 4 channels[36]
图 6 集成微波光子滤波器。(a)基于氮化硅微环的微波光子滤波器[37]; (b) 基于SBS效应的微波光子滤波器[38]; (c)基于级联氮化硅微环的微波光子滤波器[39]; (d) SOI单片集成微波光子滤波器[40]; (e) InP全单片集成微波光子滤波器[41]
Figure 6. Integrated microwave photonic filters. (a) Microwave photonic filter based on silicon nitride microring resonator[37]; (b) Microwave photonic filter based on SBS effect[38]; (c) Microwave photonic filter based on cascaded silicon nitride microring resonators[39]; (d) SOI integrated microwave photonic filter[40]; (e) Monolithically integrated InP microwave photonic filter[41]
图 7 集成微波光子信号产生芯片。(a) InP单片集成微波光子振荡器芯片[42]; (b) SOI集成微波光子振荡器芯片[43]; (c) SOI集成任意波形产生芯片[44]; (d) SOI线性调频信号产生芯片[45]
Figure 7. Integrated microwave photonic signal generation chips. (a) InP monolithically integrated microwave photonic oscillator chip[42]; (b) SOI integrated microwave photonic oscillator chip[43]; (c) SOI integrated arbitrary microwave waveform generation chip[44]; (d) SOI integrated chip for the generation of linearly chirped microwave signals[45]
图 10 可编程微波光子信号处理芯片。(a)基于可调MZI单元的集成可编程微波光子信号处理芯片[52]; (b)基于可调微盘的集成可编程微波光子信号处理芯片[53]
Figure 10. Programmable microwave photonic signal processing chips. (a) Programmable microwave photonic integrated signal processing chip based on tunable MZI units[52]; (b) Programmable microwave photonic integrated signal processing chip based on tunable microdisks[53]
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