Research progress on local field characterization of mercury cadmium telluride infrared photodetectors (invited)
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摘要: 碲镉汞材料 (HgCdTe) 是第三代红外探测系统中使用的重要探测材料,其发展水平能基本反映当前红外探测器最优性能指标。近年来,天文、遥感和民用设备对探测器性能提出了更高的要求,这对HgCdTe红外探测器的设计和制备提出了新的挑战。HgCdTe红外探测器更精细的设计和加工技术为提高HgCdTe红外探测器性能提供解决思路。抑制器件的有害局域场、调控器件的有益局域场可以实现器件性能进一步的突破。但是,如何对HgCdTe光电器件局域场进行表征与分析,澄清HgCdTe光电器件中局域场相关的噪声及暗电流起源,是推动器件性能突破需解决的重要关键科学与技术问题。文中将总结HgCdTe红外光电探测器局域场表征与分析的研究进展,为新一代HgCdTe红外光电探测器发展提供基础支撑。Abstract: Mercury cadmium telluride (HgCdTe) material is an important detection material used in third-generation infrared detection systems, and its development level can reflect the optimal performance indicators of current infrared detectors. In recent years, astronomical, remote sensing, and civil equipment have put forward higher requirements for detector performance, which has brought new challenges to the design and preparation of HgCdTe infrared detectors. The finer design and processing technology of HgCdTe infrared detectors provide solutions for improving the performance of HgCdTe infrared detectors. Suppressing the harmful local field of the device and regulating the beneficial local field of the device can achieve further breakthroughs in device performance. However, how to characterize and analyse the local field of HgCdTe optoelectronic devices and clarify the origin of dark current and related noise in HgCdTe optoelectronic devices have become key scientific and technical issues to be solved to promote device performance breakthroughs. This paper summarizes the research progress of local field characterization and analysis of HgCdTe infrared photodetectors and provides basic support for the development of a new generation of HgCdTe infrared photodetectors.
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图 2 (a)激光通过物镜聚焦后保持位置不变,样品随着压电驱动平台进行移动实现激光扫描[33]; (b)样品固定不动,激光由压电驱动反射镜片反射到样品表面进行扫描[34] ; (c)激光束诱导产生电流原理图和典型SPCM曲线[35]
Figure 2. (a) The laser is focused through the objective lens and remains in position, and the sample moves with the piezo-driven stage to achieve laser scanning[33]; (b) The sample is held stationary and the laser is reflected by a piezoelectrically driven reflector lens onto the sample surface for scanning [34]; (c) Schematic diagram and typical SPCM curve of laser beam induced current[35]
图 3 B+离子注入中波HgCdTe器件SPCM分析下的SPCM实验曲线。(a) 300 K ;(b) 87 K;(c) 87 K,300 K时器件的p-n-on-p结转换模型示意图;(d)中波和长波p型HgCdTe 样品材料霍尔系数随温度变化的测量曲线;(e) 300 K时,离子注入区域不同缺陷浓度下的SPCM仿真曲线;(f) 87 K时,掺杂浓度不均匀的SPCM仿真曲线[39]
Figure 3. SPCM analysis of B+ ion-implanted mid-wavelength HgCdTe devices SPCM curve at (a) 300 K and (b) 87 K, respectively; (c) schematic of the p-n-on-p junction transition model of the device at 87 K, 300 K; (d) Measured curves of Hall coefficients of mid-wavelength and long-wavelength p-type HgCdTe materials vs temperature; (e) SPCM simulation curve at 300 K for different defect concentrations in the ion injection region; (f) SPCM simulation curve at 87 K for non-uniform doping concentration[39]
图 4 激光打孔成结HgCdTe器件SPCM分析。(a) 300 K 下的SPCM实验曲线;(b) 87 K 下的SPCM实验曲线;(c) 低温和室温下样品器件的p-n结转换模型;(d) 霍尔系数的温度依赖性;(e) 300 K激光打孔成结SPCM模拟和实验结果曲线;(f) 87 K激光打孔成结SPCM模拟和实验结果曲线[35]
Figure 4. SPCM analysis of laser punched junction-forming HgCdTe devices. (a) Experimental SPCM curve at 300 K; (b) Experimental SPCM curve at 87 K; (c) Model of p-n junction transition for sample devices at low and room temperatures; (d) Temperature dependence of Hall coefficient; (e) 300 K laser perforated junction SPCM simulation and experimental results curves; (f) 87 K laser perforated junction SPCM simulation and experimental results curves[35]
图 6 干法刻蚀HgCdTe器件SPCM分析。(a) 81 K下测量的不同刻蚀温度p-HgCdTe样品的SPCM曲线;(b)损伤结深度(左)和SPCM信号峰峰值(右)作为刻蚀温度的函数;(c)不同刻蚀温度下第一周期的实验信号分布;(d)模拟具有不同电子浓度器件的SPCM信号分布;(e)扫描具有不同电子浓度的第一个刻蚀凹槽,模拟电场作为激光束位置的函数[55]
Figure 6. SPCM analysis of dry etched HgCdTe devices. (a) SPCM curves of p-type HgCdTe samples with different etching temperatures measured at 81 K; (b) Damage junction depth (left) and SPCM signal peaks (right) as a function of etching temperature; (c) Experimental signal distribution for the first cycle at different etching temperatures; (d) Simulation of SPCM signal distribution for devices with different electron concentrations; (e) Scan of the first etched notch with different electron concentrations and simulated electric field as a function of laser beam position[55]
图 7 (a)保护环结构的电场分布[56];(b) pBp-APD结构在−7 V的载流子密度、电场和电势模拟图[57];(c)变组分APD器件的吸收区带隙[58];(d)异质结 P-i-N 探测器架构[59];(e)基于局域场理论的APD增益特性分析[20];(f)局域光场结构 HgCdTe 光电二极管示意图[60]
Figure 7. (a) Electric field distribution of the protection ring structure [56]; (b) Simulated plots of carrier density, electric field and potential at −7 V for the pBp-APD structure[57]; (c) Band gap in the absorption region of the variable component APD device[58]; (d) heterojunction P-i-N diode architecture [59]; (e) APD gain characterization based on local field theory [20]; (f) Schematic of the local field structure HgCdTe photodiode[60]
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