Simulation of charge collection efficiency for EBAPS with uniformly doped substrate

Song De; Shi Feng; Li Ye

doi:10.3788/IRLA201645.0203002

The charge collection efficiency of electron bombarded active pixel sensor(EBAPS) was simulated while the EBAPS with uniformly doped P type substrate. The photoelectron scatting trajectories in dead layer and electron multiplier layer were simulated based on the low-energy electron-solid interaction model and Monte Carlo method. Meanwhile the influence factors how affecting the energy loss rate were studied. According to semiconductor theory, the influence factors(B atoms doping concentration, film thickness and the incident electron energy) how affecting the charge collection efficiency were studied. The final charge collection efficiency's simulation results are consistent with the reported(4 keV, uniformly doping) measured results, which means the simulation result can provide theoretical guidance for the fabrication of high gain EBAPS.

Simulation of charge collection efficiency for EBAPS with uniformly doped substrate

1. Science and Technology on Low-Light-Level Night Vision Laboratory,Xi'an 710065,China;

2. School of Science,Changchun University of Science and Technology,Changchun 130022,China

Received Date: 2015-11-05

Rev Recd Date: 2015-12-14

Publish Date: 2016-02-25

Key words:

Abstract: The charge collection efficiency of electron bombarded active pixel sensor(EBAPS) was simulated while the EBAPS with uniformly doped P type substrate. The photoelectron scatting trajectories in dead layer and electron multiplier layer were simulated based on the low-energy electron-solid interaction model and Monte Carlo method. Meanwhile the influence factors how affecting the energy loss rate were studied. According to semiconductor theory, the influence factors(B atoms doping concentration, film thickness and the incident electron energy) how affecting the charge collection efficiency were studied. The final charge collection efficiency's simulation results are consistent with the reported(4 keV, uniformly doping) measured results, which means the simulation result can provide theoretical guidance for the fabrication of high gain EBAPS.

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Reference (13)

[1]	Mackay C D, Tubbs R N, Bell R, et al. Sub-electron read noise at MHz pixel rates(A)[C]//Proceedings of SPIE, 2001, 4306:289-298
[2]
[3]	Xin Fuxue. Optical fiber coupling technique of ICCD[J]. Infrared and Laser Engineering, 2001, 30(3):210-213.(in Chinese)
[4]
[5]	Benussi L, Fanti V, Frekers D, et al. A multichannel single-photon sensitive detector for high-energy physics:the megapixel EBCCD[J]. Nuclear Instruments and Methods in Physics Research A, 2000(442):154-158.
[6]
[7]	Barbier R, Cajgfinger T, Calabria P, et al. A single-photon sensitive ebCMOS camera:The LUSIPHER prototype[J]. Nuclear Instruments and Methods in Physics Research A, 2011, 648(1):266-274.
[8]
[9]
[10]	Song De, Piao Xue, Bai Xiaofeng, et al. Simulation research of electrostatic field of MCP input in proximity image intensifier[J]. Infrared and Laser Engineering, 2015, 44(10):2981-2986.(in Chinese)
[11]	Wang Yi, Yang Pingli, Zhu Weijie, et al. Study of parallel computing of a Monte Carlo programs[J]. Nuclear Electronics Detection Technology, 2001, 21(1):31-33.(in Chinese)
[12]
[13]	Browning R, Li T Z, Chui B, et al. Empirical forms for the electron/atom elastic scattering cross sections from 0.1 to 30 LeV[J]. Journal of Applied Physics, 1994, 76:2016-2022.

Simulation of charge collection efficiency for EBAPS with uniformly doped substrate

doi: 10.3788/IRLA201645.0203002

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