Volume 45 Issue 3
Apr.  2016
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Luo Donggen, Zou Peng, Chen Dihu, Wang Yi, Hong Jin. Effect of gamma ray irradiation on silicon photodiodes[J]. Infrared and Laser Engineering, 2016, 45(3): 320001-0320001(5). doi: 10.3788/IRLA201645.0320001
Citation: Luo Donggen, Zou Peng, Chen Dihu, Wang Yi, Hong Jin. Effect of gamma ray irradiation on silicon photodiodes[J]. Infrared and Laser Engineering, 2016, 45(3): 320001-0320001(5). doi: 10.3788/IRLA201645.0320001

Effect of gamma ray irradiation on silicon photodiodes

doi: 10.3788/IRLA201645.0320001
  • Received Date: 2015-07-05
  • Rev Recd Date: 2015-08-03
  • Publish Date: 2016-03-25
  • The study on effect of gamma() ray irradiation on silicon photodiodes for on-orbit calibration was carried out. Silicon photodiodes were irradiated by 20 krad(Si), 35 krad(Si) and 50 krad(Si) gamma doses resepctively. The darkness current and spectral responsivity were measured before and after irradiation. It's found that the darkness current and spectral responsivity have no dramatic change under less than 35 krad(Si) gamma doses. Under 50 krad(Si) gamma doses, the darkness current of the sample increases slightly, but the influence on the application of calibrator can be ignored. The results suggest that silicon photodiode under test can be used as a candidate device for on-orbit calibrator in visible spectral bands due to its good long-term stability and reliability in the space irradiation environment.
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Effect of gamma ray irradiation on silicon photodiodes

doi: 10.3788/IRLA201645.0320001
  • 1. Anhui Institute of Optics and Fine Mechanics,Chinese Academy of Sciences,Hefei 230031,China;
  • 2. University of Science & Technology of China,Hefei 230031,China

Abstract: The study on effect of gamma() ray irradiation on silicon photodiodes for on-orbit calibration was carried out. Silicon photodiodes were irradiated by 20 krad(Si), 35 krad(Si) and 50 krad(Si) gamma doses resepctively. The darkness current and spectral responsivity were measured before and after irradiation. It's found that the darkness current and spectral responsivity have no dramatic change under less than 35 krad(Si) gamma doses. Under 50 krad(Si) gamma doses, the darkness current of the sample increases slightly, but the influence on the application of calibrator can be ignored. The results suggest that silicon photodiode under test can be used as a candidate device for on-orbit calibrator in visible spectral bands due to its good long-term stability and reliability in the space irradiation environment.

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