Wei Jiatong, Chen Liwei, Hu Haifan, Liu Zhiyuan. An advanced integrated avalanche photodiode with Si and Ge material[J]. Infrared and Laser Engineering, 2016, 45(S1): 188-193. doi: 10.3788/IRLA201645.S120002
| Citation:
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Wei Jiatong, Chen Liwei, Hu Haifan, Liu Zhiyuan. An advanced integrated avalanche photodiode with Si and Ge material[J]. Infrared and Laser Engineering, 2016, 45(S1): 188-193. doi: 10.3788/IRLA201645.S120002
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An advanced integrated avalanche photodiode with Si and Ge material
- 1.
College of Information and Communication Engineering,Harbin Engineering University,Harbin 150001,China;
- 2.
Nuctech Company Limited,Beijing 100084,China;
- 3.
The 49 th Research Institute of China Electronics Technology Group Corporation,Harbin 150001,China
- Received Date: 2016-02-01
- Rev Recd Date:
2016-03-20
- Publish Date:
2016-05-25
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Abstract
An advanced avalanche photodiode(APD) was put forword which was integrated by the Si Separate Absorption, Charge, Multiplication(SACM) and Ge SACM APDs. This advanced APD has enlarged the detected wavelength range to 200-1 400 nm. Furthermore, the key parameters which were used to characterize the APD performance, such as the electric field distribution, the dark current and photocurrent, the gain, and the sensitivity of the APD were researched. The simulation results demonstrated that the breakdown voltage of the advanced APD is 145 V, the peak response is 22 A/W at 900 nm wavelength as cathode is 140 V, and the current gain of the advanced APD could get 50 at 400 nm wavelength before breakdown. The fabrication process was also discussed.
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