Yuan Pei, Wang Yue, Wu Yuanda, An Junming, Zhang Jiashun, Zhu Lianqing. Design and fabrication of an etching diffraction grating based on photonic crystal reflection mirrors[J]. Infrared and Laser Engineering, 2019, 48(9): 916005-0916005(6). doi: 10.3788/IRLA201948.0916005
| Citation:
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Yuan Pei, Wang Yue, Wu Yuanda, An Junming, Zhang Jiashun, Zhu Lianqing. Design and fabrication of an etching diffraction grating based on photonic crystal reflection mirrors[J]. Infrared and Laser Engineering, 2019, 48(9): 916005-0916005(6). doi: 10.3788/IRLA201948.0916005
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Design and fabrication of an etching diffraction grating based on photonic crystal reflection mirrors
- 1.
Beijing Laboratory of Optical Fiber Sensing and System,Beijing Information Science & Technology University,Beijing 100016,China;
- 2.
State Key Laboratory on Integrated Optoelectronics,Institute of Semiconductors,Chinese Academy of Sciences,Beijing 100083,China;
- 3.
Center of Materials Science and Optoelectronics Engineering,University of Chinese Academy of Sciences,Beijing 100049,China
- Received Date: 2019-04-11
- Rev Recd Date:
2019-05-21
- Publish Date:
2019-09-25
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Abstract
As wavelength division multiplexing/de-multiplexing devices, etching diffraction gratings (EDGs) are promising to be widely used in the optical communication systems. A new kind of EDG was designed and fabricated on silicon on insulator (SOI) platform with top silicon layer of 220 nm, which applied hexagonal-lattice air-hole photonic crystals as its reflection mirrors. Simulated results show that compared with the traditional EDGs based on stepped-grating reflection mirrors, the EDG based on photonic-crystal reflection mirrors could reduce the fabrication difficulty, decrease the insertion loss and realize the polarization maintenance theoretically. Afterwards, the EDG based on photonic-crystal reflection mirrors was fabricated with one step of deep ultraviolet lithography (DUVL) and one step of inductively coupled plasma (ICP) etching. The measured results show that the insertion loss of the device is 9.51-11.86 dB, and the crosstalk of it is 5.87-8.72 dB, which can be further improved by optimizing its fabrication process and optimizing the location of the output waveguides.
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