Response of pulse laser irradition solar cell and effect of photoelectric conversion

Chen Yifu; Chang Hao; Zhou Weijing; Yu Chenghao

doi:10.3788/IRLA20200262

Volume 49 Issue S1

Sep. 2020

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Chen Yifu, Chang Hao, Zhou Weijing, Yu Chenghao. Response of pulse laser irradition solar cell and effect of photoelectric conversion[J]. Infrared and Laser Engineering, 2020, 49(S1): 20200262. doi: 10.3788/IRLA20200262

Citation:

Chen Yifu, Chang Hao, Zhou Weijing, Yu Chenghao. Response of pulse laser irradition solar cell and effect of photoelectric conversion[J]. Infrared and Laser Engineering, 2020, 49(S1): 20200262. doi: 10.3788/IRLA20200262

Response of pulse laser irradition solar cell and effect of photoelectric conversion

doi: 10.3788/IRLA20200262

State Key Laboratory of Laser Propulsion & Application, Department of Aerospace Science and Technology, Space Engineering University, Beijing 101416, China

Received Date: 2020-05-01
Rev Recd Date: 2020-06-14
Publish Date: 2020-09-22

Abstract

Based on the established laser thermal conduction model and photoelectric conversion physical model of single-junction GaAs solar cells, the effects of pulse laser irradiation temperature and photoelectric conversion on single-junction GaAs solar cells were simulated and studied. Two different types, 532 nm and 808 nm, were studied. Under different irradiation energy and incident angle, the solar cell temperature, voltage-current characteristics, photoelectric conversion efficiency and other properties were changed by the pulsed laser with different wavelengths. The simulation results show that the smaller the angle between the incident laser and the normal direction of the solar cell, the greater the electric power of the solar cell output under the same laser irradiation intensity, 532 nm and 808 nm wavelength lasers have little difference in temperature caused by GaAs battery irradiation. 808 nm wavelength laser has a larger absorption coefficient for GaAs materials than 532 nm wavelength laser. Solar cells can absorb more energy and have a higher response. Single-junction GaAs cells irradiated with 808 nm wavelength laser can output more electrical power and bring greater photoelectric conversion efficiency.
- laser irradiation,
- photoelectric conversion,
- temperature,
- voltage-current characteristics

References

[1]	Qiu Dongdon, Wang Rui, Cheng Xiang'ai, et al. Damage effect of monocrystanine silicon solar cells under ultrashort pulse laser irradiations[J]. Infrared and Laser Engineering, 2012, 41(1):112-115. (in Chinese)邱冬冬, 王睿, 程湘爱, 等. 超短脉冲激光对单晶硅太阳能电池的损伤效应[J]. 红外与激光工程, 2012, 41(1):112-115.
[2]	Hu Chuanxin, Hu Jiahui, Huang Jiqiang, et al. Nanosecond laser and mechanism primary analysis of Sicell optoeletric conversion efficiency[J]. Infrared and Laser Engineering, 2012, 41(12):3226-3229. (in Chinese)胡传炘, 胡家晖, 黄继强, 等. 纳秒激光与硅电池片光电转换效率变化及机理初步分析[J]. 红外与激光工程, 2012, 41(12):3226-3229.
[3]	Zhang Chao, Zhang Qingmao, Guo Liang, et al. Texturing process with 355 nm laser for amorphous silicon film solar cell[J]. Chinese Journal of Lasers, 2013, 40(7):0707004. (in Chinese)张超, 张庆茂, 郭亮, 等. 非晶硅薄膜太阳能电池的紫外激光制绒工艺[J]. 中国激光, 2013, 40(7):0707004.
[4]	Matsuoka Y. Normal laser damage of silicon solar cells without phase change[J]. Applied Physics Letters, 1974, 25(10):574.
[5]	Richard Mason. Feasibility of laser power transmission to a high-altitude unmanned aerial vehicle[R]. Santa Monica:RAND Project Air Force, 2011.
[6]	Meiss J, Holzmueller F, Gresser R, et al. Near-infrared absorbing semitransparent organic solar cells[J]. Applied Physics Letters, 2011, 99(19):252.
[7]	Zhang Chao, Zhang Qingmao, Guo Liang, et al. Ablating process with 355 nm laser for amOrphous silicon thin-film solar cell[J]. High Power Laser and Particle Beams, 2012, 24(11):2751-2756. (in Chinese)张超, 张庆茂, 郭亮, 等. 非晶硅薄膜太阳能电池的紫外激光刻蚀工艺[J]. 强激光与粒子束, 2012, 24(11):2751-2756.
[8]	Zhu Rongzhen, Wang Rui, Jiang Tian, et al. Research of laser irradiation effect on monocrystalline silicon solar cellsand single junction GaAs solar cells[J]. Journal of Infrared and Millimeter Waves, 2015, 34(4):97-103. (in Chinese)朱荣臻, 王睿, 江天, 等. 单晶Si、单结GaAs太阳能电池的激光损伤特性对比研究[J]. 红外与毫米波学报, 2015, 34(4):97-103.
[9]	Li Xiangyang, Wu Shichen, Li Zhongxiao. Laser wireless power transmission technology and its development trend[J]. Spacecraft Engineering, 2015, 24(1):1-7. (in Chinese)李向阳, 吴世臣, 李钟晓. 激光无线能量传输技术应用及其发展趋势[J]. 航天器工程, 2015, 24(1):1-7.
[10]	Tian Xiuqin, Xiao Si, Tao Shaohua, et al. Damage threshold research of monocrys-talline silicon solar cells under femtose-cond laser illumination[J]. Infrared and Laser Engineering, 2014, 43(3):676-680. (in Chinese)田秀芹, 肖思, 陶少华, 等. 飞秒超短脉冲激光对硅太阳能电池的损伤阈值研究[J].红外与激光工程, 2014, 43(3):676-680.
[11]	Sun Hao, Zhou Dayong, Zhang Hongchao, et al. Simulation of single-junction GaAs photovoltaic cell output characteristics by continuous wave laser irradiation[J]. Infrared and Laser Engineering, 2017, 46(10):1003006. (in Chinese)孙浩, 周大勇, 张宏超, 等. 连续激光供能单结GaAs光电池输出特性仿真[J]. 红外与激光工程, 2017, 46(10):1003006.
[12]	Dou Pengcheng, Feng Guobin, Zhang Jianmin, et al. Mechanism of laser induced short circuit current increasing in triple-junction GaAs solar cell[J]. Infrared and Laser Engineering, 2017, 46(S1):S106069. (in Chinese)窦鹏程, 冯国斌, 张检民, 等. 激光诱导三结砷化镓太阳电池短路电流增大现象与机理[J]. 红外与激光工程, 2017, 46(S1):S106069.
[13]	Haijiao Zhou, Wenjun Sun, Zhong Meng, et al. Numerical analysis of pulse laser deformation on GaAs[C]//International Conference on Optoelectronics & Micro-electronics, IEEE, 2013.
[14]	Luis V Rodríguez-de Marcos, Larruquert J I, José A Méndez, et al. Self-consistent optical constants of SiO₂ and Ta₂O₅ films[J]. Optical Materials Express, 2016, 6(11):3622-3637.
[15]	Chen Zeshao, Ge Xinshi, Gu Yuqin. Technique and Determination of Thermo-Physical Properties[M]. Hefei:China University of Science and Technology Press, 1990. (in Chinese)陈则韶, 葛新石, 顾毓沁. 量热技术和热物性测定[M]. 合肥:中国科学技术大学出版社, 1990.
[16]	Li Yunpeng, Zhang Jianmin, Dou Pengcheng, et al. Thermal damage mechanism of single junction GaAs solar cells irra-diated by continuous wave laser[J]. Infrared and Laser Engineering, 2018, 47(5):0506001. (in Chinese)李云鹏, 张检民, 窦鹏程, 等. 单结GaAs太阳电池连续激光辐照热损伤机理[J]. 红外与激光工程, 2018, 47(5):0506001.

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通讯作者: 陈斌, bchen63@163.com

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沈阳化工大学材料科学与工程学院沈阳 110142

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Response of pulse laser irradition solar cell and effect of photoelectric conversion

State Key Laboratory of Laser Propulsion & Application, Department of Aerospace Science and Technology, Space Engineering University, Beijing 101416, China

Received Date: 2020-05-01

Rev Recd Date: 2020-06-14

Publish Date: 2020-09-22

Key words:

Abstract: Based on the established laser thermal conduction model and photoelectric conversion physical model of single-junction GaAs solar cells, the effects of pulse laser irradiation temperature and photoelectric conversion on single-junction GaAs solar cells were simulated and studied. Two different types, 532 nm and 808 nm, were studied. Under different irradiation energy and incident angle, the solar cell temperature, voltage-current characteristics, photoelectric conversion efficiency and other properties were changed by the pulsed laser with different wavelengths. The simulation results show that the smaller the angle between the incident laser and the normal direction of the solar cell, the greater the electric power of the solar cell output under the same laser irradiation intensity, 532 nm and 808 nm wavelength lasers have little difference in temperature caused by GaAs battery irradiation. 808 nm wavelength laser has a larger absorption coefficient for GaAs materials than 532 nm wavelength laser. Solar cells can absorb more energy and have a higher response. Single-junction GaAs cells irradiated with 808 nm wavelength laser can output more electrical power and bring greater photoelectric conversion efficiency.

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Reference (16)

[1]	Qiu Dongdon, Wang Rui, Cheng Xiang'ai, et al. Damage effect of monocrystanine silicon solar cells under ultrashort pulse laser irradiations[J]. Infrared and Laser Engineering, 2012, 41(1):112-115. (in Chinese)邱冬冬, 王睿, 程湘爱, 等. 超短脉冲激光对单晶硅太阳能电池的损伤效应[J]. 红外与激光工程, 2012, 41(1):112-115.
[2]	Hu Chuanxin, Hu Jiahui, Huang Jiqiang, et al. Nanosecond laser and mechanism primary analysis of Sicell optoeletric conversion efficiency[J]. Infrared and Laser Engineering, 2012, 41(12):3226-3229. (in Chinese)胡传炘, 胡家晖, 黄继强, 等. 纳秒激光与硅电池片光电转换效率变化及机理初步分析[J]. 红外与激光工程, 2012, 41(12):3226-3229.
[3]	Zhang Chao, Zhang Qingmao, Guo Liang, et al. Texturing process with 355 nm laser for amorphous silicon film solar cell[J]. Chinese Journal of Lasers, 2013, 40(7):0707004. (in Chinese)张超, 张庆茂, 郭亮, 等. 非晶硅薄膜太阳能电池的紫外激光制绒工艺[J]. 中国激光, 2013, 40(7):0707004.
[4]	Matsuoka Y. Normal laser damage of silicon solar cells without phase change[J]. Applied Physics Letters, 1974, 25(10):574.
[5]	Richard Mason. Feasibility of laser power transmission to a high-altitude unmanned aerial vehicle[R]. Santa Monica:RAND Project Air Force, 2011.
[6]	Meiss J, Holzmueller F, Gresser R, et al. Near-infrared absorbing semitransparent organic solar cells[J]. Applied Physics Letters, 2011, 99(19):252.
[7]	Zhang Chao, Zhang Qingmao, Guo Liang, et al. Ablating process with 355 nm laser for amOrphous silicon thin-film solar cell[J]. High Power Laser and Particle Beams, 2012, 24(11):2751-2756. (in Chinese)张超, 张庆茂, 郭亮, 等. 非晶硅薄膜太阳能电池的紫外激光刻蚀工艺[J]. 强激光与粒子束, 2012, 24(11):2751-2756.
[8]	Zhu Rongzhen, Wang Rui, Jiang Tian, et al. Research of laser irradiation effect on monocrystalline silicon solar cellsand single junction GaAs solar cells[J]. Journal of Infrared and Millimeter Waves, 2015, 34(4):97-103. (in Chinese)朱荣臻, 王睿, 江天, 等. 单晶Si、单结GaAs太阳能电池的激光损伤特性对比研究[J]. 红外与毫米波学报, 2015, 34(4):97-103.
[9]	Li Xiangyang, Wu Shichen, Li Zhongxiao. Laser wireless power transmission technology and its development trend[J]. Spacecraft Engineering, 2015, 24(1):1-7. (in Chinese)李向阳, 吴世臣, 李钟晓. 激光无线能量传输技术应用及其发展趋势[J]. 航天器工程, 2015, 24(1):1-7.
[10]	Tian Xiuqin, Xiao Si, Tao Shaohua, et al. Damage threshold research of monocrys-talline silicon solar cells under femtose-cond laser illumination[J]. Infrared and Laser Engineering, 2014, 43(3):676-680. (in Chinese)田秀芹, 肖思, 陶少华, 等. 飞秒超短脉冲激光对硅太阳能电池的损伤阈值研究[J].红外与激光工程, 2014, 43(3):676-680.
[11]	Sun Hao, Zhou Dayong, Zhang Hongchao, et al. Simulation of single-junction GaAs photovoltaic cell output characteristics by continuous wave laser irradiation[J]. Infrared and Laser Engineering, 2017, 46(10):1003006. (in Chinese)孙浩, 周大勇, 张宏超, 等. 连续激光供能单结GaAs光电池输出特性仿真[J]. 红外与激光工程, 2017, 46(10):1003006.
[12]	Dou Pengcheng, Feng Guobin, Zhang Jianmin, et al. Mechanism of laser induced short circuit current increasing in triple-junction GaAs solar cell[J]. Infrared and Laser Engineering, 2017, 46(S1):S106069. (in Chinese)窦鹏程, 冯国斌, 张检民, 等. 激光诱导三结砷化镓太阳电池短路电流增大现象与机理[J]. 红外与激光工程, 2017, 46(S1):S106069.
[13]	Haijiao Zhou, Wenjun Sun, Zhong Meng, et al. Numerical analysis of pulse laser deformation on GaAs[C]//International Conference on Optoelectronics & Micro-electronics, IEEE, 2013.
[14]	Luis V Rodríguez-de Marcos, Larruquert J I, José A Méndez, et al. Self-consistent optical constants of SiO₂ and Ta₂O₅ films[J]. Optical Materials Express, 2016, 6(11):3622-3637.
[15]	Chen Zeshao, Ge Xinshi, Gu Yuqin. Technique and Determination of Thermo-Physical Properties[M]. Hefei:China University of Science and Technology Press, 1990. (in Chinese)陈则韶, 葛新石, 顾毓沁. 量热技术和热物性测定[M]. 合肥:中国科学技术大学出版社, 1990.
[16]	Li Yunpeng, Zhang Jianmin, Dou Pengcheng, et al. Thermal damage mechanism of single junction GaAs solar cells irra-diated by continuous wave laser[J]. Infrared and Laser Engineering, 2018, 47(5):0506001. (in Chinese)李云鹏, 张检民, 窦鹏程, 等. 单结GaAs太阳电池连续激光辐照热损伤机理[J]. 红外与激光工程, 2018, 47(5):0506001.

Response of pulse laser irradition solar cell and effect of photoelectric conversion

doi: 10.3788/IRLA20200262

Abstract

References

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通讯作者: 陈斌, bchen63@163.com

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