Volume 49 Issue 1
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Shi Yanli, Zhu Hongxia, Yang Xueyan, Zeng Hui, Li Zaibo, Liu Chen, Wang Jian, Wang Wei. InP-based free running mode single photon avalanche photodiode[J]. Infrared and Laser Engineering, 2020, 49(1): 0103005-0103005(8). doi: 10.3788/IRLA202049.0103005
Citation: Shi Yanli, Zhu Hongxia, Yang Xueyan, Zeng Hui, Li Zaibo, Liu Chen, Wang Jian, Wang Wei. InP-based free running mode single photon avalanche photodiode[J]. Infrared and Laser Engineering, 2020, 49(1): 0103005-0103005(8). doi: 10.3788/IRLA202049.0103005
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InP-based free running mode single photon avalanche photodiode

doi: 10.3788/IRLA202049.0103005

  • 1. School of Physics and Astronomy, Yunnan University, Kunming 650091, China;

  • 2. Key Lab of Quantum Information of Yunnan Province, Yunnan University, Kunming 650091, China

  • Received Date: 2019-10-05
  • Rev Recd Date: 2019-11-15
  • Publish Date: 2020-01-28
  • The avalanche photodiode detector based on InGaAs/InP has a working response band range of 0.9-1.67 μm, which has high detection efficiency and single photonic sensitivity in Geiger mode. By configuring different bias circuits, it can work in gating and free running mode. At present, the gating mode is mainly used, and can be applied to quantum key distribution with known arrival time of photons. In laser ranging, lidar imaging and other applications, when the arrival time of photons is unknown, the device needs to work in free running mode. Through internal integration or on-chip integration of self-quenching devices, the detector itself has the function of self-quenching or self-recovery, does not need external quenching circuit, and can work in free running mode. This greatly expands the application field of InGaAs/InP single-photonic detector, and has the advantage of fabricating single-photonic detector array at the same time. In addition, the cutoff wavelength of the detector can be further extended to 2.4 μm by using InGaAs/GaAsSb II superlattice material as the absorption layer of the avalanche photodiode. In this paper, the Geiger mode APD was introduced, and the principle and performance of the current free running mode and the extended wavelength inp based single photonic detector were described in detail.
  • [1] Levine B F, Bethea C G, Campbell J C. Room-temperature 1.3-μm optical time domain reflectometer using a photon counting InGaAs/InP avalanche detector[J]. Applied Physics Letters, 1985, 46(4):333-335.
    [2] Zhang J, Itzler M A, Zbinden H, et al. Advances in InGaAs/InP single-photon detector systems for quantum commu-nication[J]. Light:Science & Applications, 2015, 4(5):e286
    [3] Stucki D, Ribordy GréGoire, Stefanov André, et al. Photon counting for quantum key distribution with peltier cooled InGaAs/InP APDs[J]. Journal of Modern Optics, 2001, 48(13):1967-1981.
    [4] Hänggi E, Renner R, Wolf S. Quantum cryptography based solely on Bell's theorem[J]. Physics, 2009:arxiv:quant-ph/0911.4171.
    [5] Ren M, Gu X, Liang Y, et al. Laser ranging at 1550 nm with 1 GHz sine-wave gated InGaAs/InP APD single-photon detector[J]. Optics Express, 2011, 19(14):13497-502.
    [6] Kapusta P, Wahl M, Erdmann R. Advanced Photon Counting:Applications, Methods, Instrumentation[M]. Berlin Heidelberg:Springer-Verlag, 2015.
    [7] Pawlikowska A M, Halimi A, Lamb R A, et al. Single-photon three-dimensional imaging at up to 10 kilometers range[J]. Optics Express, 2017, 25(10):11919.
    [8] Zhao K, Zhang A, Lo Y H, et al. InGaAs single photon avalanche detector with ultralow excess noise[J]. Applied Physics Letters, 2007, 91(8):081107
    [9] Itzler M A, Jiang X, Nyman B, et al. InP-based negative feedback avalanche diodes[C]//Proceedings of SPIE-The International Society for Optical Engineering, 2009, 7222(1):54-68.
    [10] Hu Weida, Li Qing, Wen Jie, et al. InGaAs/InP research status and progress of infrared avalanche photodetector[J]. Infrared Technolgoy, 2018, 40(3):201-208. (in Chinese)
    [11] Jiang W H, Gao X J, Fang Y Q, et al. Miniaturized high-frequency sine wave gating InGaAs/InP single-photon detector[J]. Review of Scientific Instruments, 2018, 89(12):123104.
    [12] Liu M, Bai X, Hu C, et al. Low dark count rate and high single-photon detection efficiency avalanche photodiode in geiger-mode operation[J]. IEEE Photonics Technology Letters, 2007, 19(6):378-380.
    [13] Liang Y, Fei Q, Liu Z, et al. Low-noise InGaAs/InP single-photon detector with widely tunable repetition rates[J]. Photonics Research, 2019(3):DOI: 10.1364/prj.7.0000a1.
    [14] Liang Y, Chen Y, Huang Z, et al. Room-temperature single-photon detection with 1.5-GHz Gated InGaAs/InP avalanche photodiode[J]. IEEE Photonics Technology Letters, 2016, 29(1):142-145.
    [15] Comandar L C, Bernd Fröhlich, Dynes J F, et al. GHz-gated InGaAs/InP single-photon detector with detection efficiency exceeding 55% at 1550 nm[J]. Journal of Applied Physics, 2014, 117(8):045005.
    [16] Prirnceton Lightwave. PGA series single photon counting avalanche[EB/OL]. Photodiodes. https://www.docin.com/p-1858751631.html, 2017-3-3/2019-10-13.
    [17] Kai Z. III-V single photon avalanche detector with built-in negative feedback for NIR photon detection[D]. San Diego:University of California, 2008.
    [18] Cheng, J. Self-quenched InGaAs single-photon detector[C]//Proceedings of SPIE, 2009, 7320:732010.
    [19] Zhao K, Zhang A, Farr W, et al. Ultra low noise InGaAs single photon detector with transient carrier buffer[C]//LEOS 2007-IEEE Lasers and Electro-Optics Society Annual Meeting Conference Proceedings, 2007:447-448.
    [20] You S, Cheng J, Lo Y H. Physics of single photon avalanche detectors with built-in self-quenching and self-recovering capabilities[J]. IEEE Journal of Quantum Electronics, 2012, 48(7):960-967.
    [21] Jiang X, Itzler M A, O'Donnell, Kevin, et al. Shortwave infrared negative feedback avalanche diodes and solid-state photomultipliers[J]. Optical Engineering, 2014, 53(8):081908.
    [22] Jiang Xudong, Mark A Itzler, Kevin O'Donnell, et al. InGaAs/InP negative-feedback avalanche diodes(NFADs) and solid state photomultipliers (SSPMs)[C]//Proc SPIE, Advanced Photon Counting Techniques VI, 2012, 8375: 83750U.
    [23] Bin Yang. Investigation and application of type II superlattice infrared optoelectronic materials[J]. China Basic Science, 2019, 21(1): 52-54, 64.
    [24] Chuan Jin, Jianxin Chen, Chengzhang Yu, et al. InGaAs/GaAsSb Class II superlattice shortwave infrared detection materials and device characteristics[C]//National Conference on Molecular Beam Epitaxial, 2015.
    [25] Onat B M, Slomkowski K, Itzler M. Extended wavelength InGaAs-Based avalanche photodiodes for single photon counting applications[C]//Photonics Conference. IEEE, 2012.
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InP-based free running mode single photon avalanche photodiode

doi: 10.3788/IRLA202049.0103005
  • 1. School of Physics and Astronomy, Yunnan University, Kunming 650091, China;
  • 2. Key Lab of Quantum Information of Yunnan Province, Yunnan University, Kunming 650091, China
  • Received Date: 2019-10-05
  • Rev Recd Date: 2019-11-15
  • Publish Date: 2020-01-28

Abstract: The avalanche photodiode detector based on InGaAs/InP has a working response band range of 0.9-1.67 μm, which has high detection efficiency and single photonic sensitivity in Geiger mode. By configuring different bias circuits, it can work in gating and free running mode. At present, the gating mode is mainly used, and can be applied to quantum key distribution with known arrival time of photons. In laser ranging, lidar imaging and other applications, when the arrival time of photons is unknown, the device needs to work in free running mode. Through internal integration or on-chip integration of self-quenching devices, the detector itself has the function of self-quenching or self-recovery, does not need external quenching circuit, and can work in free running mode. This greatly expands the application field of InGaAs/InP single-photonic detector, and has the advantage of fabricating single-photonic detector array at the same time. In addition, the cutoff wavelength of the detector can be further extended to 2.4 μm by using InGaAs/GaAsSb II superlattice material as the absorption layer of the avalanche photodiode. In this paper, the Geiger mode APD was introduced, and the principle and performance of the current free running mode and the extended wavelength inp based single photonic detector were described in detail.

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