Volume 49 Issue 1
Jan.  2020
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Article Navigation >  Infrared and Laser Engineering  > 2020  >  49(1): 0103006-0103006(8)

Li Xue, Shao Xiumei, Li Tao, Cheng Jifeng, Huang Zhangcheng, Huang Songlei, Yang bo, Gu Yi, Ma Yingjie, Gong Haimei, Fang Jiaxiong. Developments of short-wave infrared InGaAs focal plane detectors[J]. Infrared and Laser Engineering, 2020, 49(1): 0103006-0103006(8). doi: 10.3788/IRLA202049.0103006
Citation: Li Xue, Shao Xiumei, Li Tao, Cheng Jifeng, Huang Zhangcheng, Huang Songlei, Yang bo, Gu Yi, Ma Yingjie, Gong Haimei, Fang Jiaxiong. Developments of short-wave infrared InGaAs focal plane detectors[J]. Infrared and Laser Engineering, 2020, 49(1): 0103006-0103006(8). doi: 10.3788/IRLA202049.0103006
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Developments of short-wave infrared InGaAs focal plane detectors

doi: 10.3788/IRLA202049.0103006

  • 1. State Key Laboratories of Transducer Technology, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, Shanghai 200083, China;

  • 2. Key Laboratory of Infrared Imaging Materials and Detectors, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, Shanghai 200083, China

  • Received Date: 2019-10-11
  • Rev Recd Date: 2019-11-21
  • Publish Date: 2020-01-28
  • SWIR InGaAs FPAs are widely applied to space remote sensing, low light level night vision and medical diagnostics due to the high detectivity and uniformity. Highly sensitive NIR InGaAs FPAs with response covering from 0.9 μm to 1.7 μm, the extended SWIR InGaAs FPAs with the cutoff wavelengths from 1.0 μm to 2.5 μm, and other novel SWIR InGaAs FPAs have been studied respectively at Shanghai Institute of Technical Physics of Chinese Academy of Sciences over the past ten years. NIR InGaAs FPAs have developed from some typical linear 256×1, 512×1 FPAs to 2D format 320×256, 640×512, 4 000×128 and 1 280×1 024 FPAs. Typically, the dark current density was about 5 nA/cm2 and the peak detectivity was superior to 5×1012 cm·Hz1/2/W at room temperature. 2D format 1 024×256, 1 024×512 extended wavelength InGaAs FPAs with high frame rate were also developed for the hyperspectral applications at SITP. The dark current density drops to 10 nA/cm2 and peak detectivity was over 5×1012 cm·Hz1/2/W at 200 K. By using novel epitaxial materials and the light trapping structures, the visible-NIR InGaAs FPAs for wavelength band of 0.4-1.7 μm have also been developed. The as-prepared 320×256, 640×512 InGaAs FPAs were obtained with quantum efficiency superior to 40%@0.5 m, 80%@0.8 m and 90%@1.55 m. For polarimetric detecting, InGaAs devices integrated with sub-wavelength metal grating of different angles (0°, 45°, 90°, 135°) have been developed, which exhibit the extinction ratio of greater than 20:1.
  • [1] MacDougal Michael, Hood Andrew, Geske Jon, et al. InGaAs focal plane arrays for low light level SWIR imaging[C]//Proceedings of SPIE, 2011, 8012:801221.
    [2] Battaglia J, Blessinger M, Enriquez M, et al. An uncooled 1280×1024 InGaAs focal plane array for small platform, shortwave infrared imaging[C]//Proceedings of SPIE, 2009, 7298:72983C1-8.
    [3] Rouvié A, Huet O, Hanmard S, et al. SWIR InGaAs focal plane arrays in France[C]//Proceedingsof SPIE, 2013, 8704:870403.
    [4] RouviéA, Coussement J, Huet O, et al. InGaAs focal plane array developments and perspectives[C]//Proceedings of SPIE, 2014, 9249:92490Z.
    [5] Li Xue, Huang Songlei, Chen Yu, et al. Noise characteristics of short wavelength infrared InGaAs linear focal plane arrays[J]. Journal of Applied Physics, 2012, 112(6):1-5.
    [6] Shi M, Tang H J, Shao X M, et al. Interface property of silicon nitride films grown by ICPCVD and PECVD on In0.82Al0.18As[J]. Infrared Physics and Technology, 2015, 71:384-388.
    [7] Huang Xing, Li Xue, Shi Ming, et al. The 1/f noise characteristics of In0.83Ga0.17As photodiodes with SiNx passivation films fabricated by two different techniques[J]. Infrared Physics & Technology, 2014, 67:596-599.
    [8] Gong Haimei, Li Xue, Shao Xiumei, et al. Developments of high performance short-wave infrared InGaAs focal plane detectors[J]. Infrared Technology, 2016, 38(8):629-635.(in Chinese)
    [9] Xue Li, Gong Haimei, Jiaxiong Fang, et al. The development of InGaAs short wavelength infrared focal plane arrayswith high performance[J]. Infrared Physics & Technology, 2017, 80:112-119.
    [10] Massies J, Rochette J, Delescluse P, et al. High-mobility Ga0.47In0.53As thin epitaxial layers grown by MBE, very closely lattice-matched to InP[J]. Electronics Letters, 1982, 18(18):758-760.
    [11] Cheng K Y, Cho A Y, Wagner W R. Tin doping in Ga0.47In0.53As and Al0.48In0.52As grown by molecular-beam epitaxy[J]. Journal of Applied Physics, 1981, 52:6328.
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    [15] Jin X, Pinsukanjana P, Pepper J, et al. Ultra low background InGaAs Epi-layer on InP for PIN applications by production MBE[C]//16th IPRM 2004 International Conference on Indium Phosphide and Related Materials, 2004:48-51.
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Developments of short-wave infrared InGaAs focal plane detectors

doi: 10.3788/IRLA202049.0103006
  • 1. State Key Laboratories of Transducer Technology, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, Shanghai 200083, China;
  • 2. Key Laboratory of Infrared Imaging Materials and Detectors, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, Shanghai 200083, China
  • Received Date: 2019-10-11
  • Rev Recd Date: 2019-11-21
  • Publish Date: 2020-01-28

Abstract: SWIR InGaAs FPAs are widely applied to space remote sensing, low light level night vision and medical diagnostics due to the high detectivity and uniformity. Highly sensitive NIR InGaAs FPAs with response covering from 0.9 μm to 1.7 μm, the extended SWIR InGaAs FPAs with the cutoff wavelengths from 1.0 μm to 2.5 μm, and other novel SWIR InGaAs FPAs have been studied respectively at Shanghai Institute of Technical Physics of Chinese Academy of Sciences over the past ten years. NIR InGaAs FPAs have developed from some typical linear 256×1, 512×1 FPAs to 2D format 320×256, 640×512, 4 000×128 and 1 280×1 024 FPAs. Typically, the dark current density was about 5 nA/cm2 and the peak detectivity was superior to 5×1012 cm·Hz1/2/W at room temperature. 2D format 1 024×256, 1 024×512 extended wavelength InGaAs FPAs with high frame rate were also developed for the hyperspectral applications at SITP. The dark current density drops to 10 nA/cm2 and peak detectivity was over 5×1012 cm·Hz1/2/W at 200 K. By using novel epitaxial materials and the light trapping structures, the visible-NIR InGaAs FPAs for wavelength band of 0.4-1.7 μm have also been developed. The as-prepared 320×256, 640×512 InGaAs FPAs were obtained with quantum efficiency superior to 40%@0.5 m, 80%@0.8 m and 90%@1.55 m. For polarimetric detecting, InGaAs devices integrated with sub-wavelength metal grating of different angles (0°, 45°, 90°, 135°) have been developed, which exhibit the extinction ratio of greater than 20:1.

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