Volume 44 Issue 8
Sep.  2015
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Article Navigation >  Infrared and Laser Engineering  > 2015  >  44(8): 2305-2308

Hu Xiaoying, Liu Weiguo, Duan Cunli, Cai Changlong, Guan Xiao. Spectroscopic characteristics of GaAs/Al0.3Ga0.7As quantum well infrared photodetectors[J]. Infrared and Laser Engineering, 2015, 44(8): 2305-2308.
Citation: Hu Xiaoying, Liu Weiguo, Duan Cunli, Cai Changlong, Guan Xiao. Spectroscopic characteristics of GaAs/Al0.3Ga0.7As quantum well infrared photodetectors[J]. Infrared and Laser Engineering, 2015, 44(8): 2305-2308.
shu

Spectroscopic characteristics of GaAs/Al0.3Ga0.7As quantum well infrared photodetectors

  • 1.

    School of Optoelectronic Engineering,Xi'an Technological University,Xi'an 710032,China

  • Received Date: 2014-12-05
  • Rev Recd Date: 2015-01-10
  • Publish Date: 2015-08-25
  • The method of metal chemical vapor deposition(MOVCD) was used to grow the GaAs/Al0.3Ga0.7As quantum well infrared photodetectors(QWIPs). The two sample-devices had large surface area 300 m300 m. But its pressure welding area of electrode in was 20 m20 m while that of the one out was 80 m80 m. Their spectroscopic characteristics were measured at 77K by use of Fourier Transform Spectrometer. The results show that the peak wavelength of 1# and 2# are 8.43 m and 8.32 m respectively. While the theoretical one is 8.5m according to Schrodinger equation. Thus the error between the experimental value and theoretical one of 1# and 2# are 1% and 2.1% respectively. Simulations demonstrate that metal chemical vapor deposition can satisfy quantum well infrared photodetectors processing needs and the different pressure welding area and position of electrode may has no influence on peak wavelength but has some influence on peak photocurrent.
  • [1]
    [2] Lu Wei, Li Ning, Zhen Honglou, et al. A new group of infrared opto-electronicsquantum well infrared photodetectors[J]. Science in China(Series G: Physics, Mechanics Astronomy, 2009, 39(3): 336-343. (in Chinese)陆卫, 李宁, 甄红楼, 等. 红外光电子学中的新族-量子阱红外探测器[J]. 中国科学(物理学力学天文学), 2009, 39(3): 336-343.
    [3] Hu Xiaoying, Liu Weiguo. Microstucture studies of GaAs/AlxGa1-xAsquantum well infrared photodetector[J]. High Power Laser and Particle Beams, 2013. 25(6): 1405-1408. (in Chinese)胡小英, 刘卫国. GaAs/AlxGa1-xAs量子阱红外探测器微结构研究[J]. 强激光与离子束, 2013, 25(6): 1405-1408.
    [4]
    [5]
    [6] Mehjabeen A Khan, Akeed A Pavel, Naz Islam. Intersubband transition in asymmetric quantum well infrared photodetector[J]. IEEE Transactions on Nana Technology, 2013, 12(4): 521-523.
    [7] Kwong-Kit Choi, Murzy D Jhabvala, David P Forrai, et al. Electromagnetic modeling and design of quantum wellinfrared photodetectors[J]. IEEE Journal of Selected Topics in Quantum Electronics, 2013, 19(5): 3800310.
    [8]
    [9]
    [10] Ribet-Mohamed I, Le Rouzo J, Rommeluere S, et al. Advanced characterization of the radiometric performances of quantum well infrared photodetectors[J]. Infrared Physics Technology, 2005, 47: 119-131.
    [11] Hu Xiaoying, Liu Weiguo, Duan Cunli, et al. Research on dark current of GaAs/Al0.3Ga0.7As quantum well infrared photodetector by HRTEM[J]. Infrared and Laser Engineering, 2014, 43(4): 3057-3060. (in Chinese)胡小英, 刘卫国, 段存丽, 等. GaAs/Al0.3Ga0.7As QWIP暗电流特性HRTEM研究[J]. 红外与激光工程, 2014, 43(4): 3057-3060.
    [12]
    [13] Zhang Chi, Chang Huiting, Zhao Fangyuan, et al. Design principle of Au grating couplers for quantum-well infrared photodetectors[J]. Optics Express, 2013, 38(20): 4037-4039.
    [14]
    [15] Kwong-Kit Choi, Murzy D Jhabvala, et al. Electromagnetic modeling of quantum well infrared photodetectors[J]. IEEE Journal of Quantum Electronics, 2012, 48(3): 384-393.
    [16]
    [17] Li N, Xiong D Y, Yang X F, et al. Dark currents of GaAs/AlGaAs quantum-well infrared photodetectors[J]. Appl Phys A, 2007, 89: 701-705.
    [18]
    [19] Jin Jupeng, Liu Dan, Wang Jianxin, et al. 320256 GaAs/AlGaAs long-wavelength quantum well infrared photodetectorfocal plane array[J]. Infrared and Laser Engineering, 2012, 41(4): 833-837. (in Chinese)金巨鹏, 刘丹, 王建新, 等. 320256 GaAs/AlGaAs长波红外量子阱焦平面探测器[J]. 红外与激光工程, 2012, 41(4): 833-837.
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Spectroscopic characteristics of GaAs/Al0.3Ga0.7As quantum well infrared photodetectors

  • 1. School of Optoelectronic Engineering,Xi'an Technological University,Xi'an 710032,China
  • Received Date: 2014-12-05
  • Rev Recd Date: 2015-01-10
  • Publish Date: 2015-08-25

Abstract: The method of metal chemical vapor deposition(MOVCD) was used to grow the GaAs/Al0.3Ga0.7As quantum well infrared photodetectors(QWIPs). The two sample-devices had large surface area 300 m300 m. But its pressure welding area of electrode in was 20 m20 m while that of the one out was 80 m80 m. Their spectroscopic characteristics were measured at 77K by use of Fourier Transform Spectrometer. The results show that the peak wavelength of 1# and 2# are 8.43 m and 8.32 m respectively. While the theoretical one is 8.5m according to Schrodinger equation. Thus the error between the experimental value and theoretical one of 1# and 2# are 1% and 2.1% respectively. Simulations demonstrate that metal chemical vapor deposition can satisfy quantum well infrared photodetectors processing needs and the different pressure welding area and position of electrode may has no influence on peak wavelength but has some influence on peak photocurrent.

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