PEALD沉积温度对AlN的结构和表面特性的影响

Effect of deposition temperature on the structural and surface properties of AlN by plasma enhanced atomic layer deposition

摘要: 研究通过等离子增强原子层沉积(PEALD)在不同沉积温度下生长的AlN温度对其特性的影响。前驱体是NH3和TMA,在300℃、350℃和370℃沉积温度下分别沉积了200、500、800、1 000、1 500周期的AlN层,并讨论了AlN薄膜的生长速率、结晶化和表面粗糙度。结果表明,在300~370℃范围内,随着温度的上升薄膜的沉积速率和结晶化增加,而薄膜表面粗糙度减小。

Abstract: The influence of growth temperature on the properties of aluminum nitride(AlN) films are grown by plasma enhanced atomic layer deposition(PEALD) at different deposition temperature. NH3 and trimethylaluminum(TMA) were used as precursors, 200, 500, 800, 1 000, 1 500 cycles AlN layers were deposited at 300℃, 350℃ and 370℃, the growth rate, crystallinity and surface roughness were discussed. Deposition rate and crystallization of the films increased whereas the surface roughness decreased in the growth temperature range of 300-370℃.