Abstract: A double grating external cavity semiconductor laser based on a volume Bragg grating (VBG) and a transversely chirped volume Bragg grating (TCVBG) were reported. The external cavity semiconductor laser consisted of a VBG with the reflectivity of 15% and a TCVBG with the reflectivity of 17%, which function as feedback element and mode selection element to achieve specific wavelength selection and wavelength tuning. The power, spectral and wavelength tuning characteristics of external cavity laser semiconductor using VBG and TCVBG were demonstrated. The experimental results indicate that an output power of 1.96 W is obtained with the slop efficiency of 0.94 W/A, which corresponds to the efficiency of 78% compared to the output power in free-running LD. A dual-wavelength was achieved with the linewidth down to 0.3 nm, and one wavelength of 808.6 nm was stabilized, and by adjusting the position of the chirped volume Bragg grating in the transverse direction, another wavelength was tuned in a 15 nm wavelength tunable range from 800 nm to 815 nm.