Abstract: By the way of 1-on-1, the FT50M FT-CCD working on the evaluation kit is irradiated by the 1 064 nm pulse laser with 8 ns pulse width. The experiment shows that, along with the increase of laser pulse energy density, the damage phenomena of unilateral black line, white spot and bilateral white line from the position irradiated by laser successively appear in the output image of FT-CCD. This process distinguishes obviously from the IT-CCD, which presents successively the white spot and bilateral white line in the similar experiments. Comparing the structures of FT-CCD and IT-CCD, and combing the damage mechanism of IT-CCD, it is thought that the first occurrence of unilateral black line damage phenomenon indicate a FT-CCD damage mode of the poly-silicon electrode being damaged earlier than the Si substrate. This study enriches the knowledge of laser damaging CCD image sensor, and provides a new clue for deep searching the mechanism of laser damage CCD.