激光诱导三结砷化镓太阳电池短路电流增大现象与机理

Mechanism of laser induced short circuit current increasing in triple-junction GaAs solar cell

  • 摘要: 为研究三结太阳电池在强光辐射下的损伤效应规律,采用1 070 nm连续激光作为强辐射光源开展了n-on-1模式三结砷化镓(GaAs)太阳电池激光辐照效应实验。通过分析电池I-V曲线发现,不同于单结太阳电池短路电流随辐照功率增加呈现出的单调降低,三结GaAs太阳电池短路电流在辐照功率密度达到11.1 W/cm2时会出现显著增加。文中对短路电流增大的机理进行了推导分析,得到了短路电流与限流层并联电阻间关系式,并结合子电池量子效率谱分析认为,短路电流的增加是由于激光导致的限流层并联电阻减小使得其限流失效所致。基于机理分析的等效电路模型模拟结果与实验数据吻合较好,从而说明了机理分析的正确性。

     

    Abstract: In order to reveal the degeneration mechanism of triple-junction solar cell under intense light radiation, an n-on-1 mode irradiation experiment utilizing a 1 070 nm CW laser as the intense light source was carried out. By summarizing the I-V curves measured after each irradiation, it was found that the short current in triple-junction solar cell will increase when the laser intensity reach to 11.1 W/cm2, other than monotonically decrease with laser intensity increasing in single-junction solar cell. Combined with the relationship between short-circuit current and shunt resistance of current limiting sub-cell and QE of sub-cell, a theory was put up to explain the mechanism of this phenomenon, which indicates that it is the reduction of the shunt resistant in current limiting sub-cell failures its current limiting ability, and finally leads to short circuit current increasing. This theory was verified by equivalent circuit calculation with a simulation program with integrated circuit emphasis.

     

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