2 μm InGaSb/AlGaAsSb量子阱激光器理想因子的研究

Investigation on ideality factor of 2 μm InGaSb/AlGaAsSb quantum well laser

摘要: 展示了一种低阈值（~131 A/cm2）2m InGaSb/AlGaAsSb单量子阱（Single Quantum Well，SQW）激光器，并对该激光器的理想因子n进行了研究。激光器的总体理想因子n由中央pn结的理想因子n和n型GaSb衬底与n型金属之间形成的整流结的理想因子n两部分组成。当温度从20℃升高到80℃时，激光器的总体理想因子n从4.0降低至3.3。该结果与所使用的理论模型以及独立的GaSb材料整流结（pn结、GaSb/金属结等）理想因子n的数值是相吻合的。

Abstract: 2m InGaSb/AlGaAsSb single quantum well(SQW) laser with low threshold current density of~131 A/cm2 and its ideality factor n was presented. The ideality factors n of the central p-n junction and the n-GaSb/metal junction sum up to be the total ideality factor n of the laser. The total ideality factor n decreases from 4.0 to 3.3 when the temperature was increased from 20 to 80℃. The results are in good agreement with the applied theoretical model as well as the ideality factor n of the individual GaSb-based junctions(p-n junction, GaSb/metal junction etc.).