Abstract: To verify the sensitivity of the single event transient effects of SiGe BiCMOS linear devices, a typical operational amplifier THS4304 and a voltage regulator TPS760 were selected to study the single event effects with pulsed laser. In the experiments, a method was proposed to determine the laser threshold energy of single event transient by gradual changing energy. And the sensitive region of single event effects within the device was analyzed by point-by-step scanning method. On this basis, the interaction between the pulse laser energy and the single event transient was analyzed, and the single event effects cross section was obtained, which provided a reference for the selection and application of the SiGe BiCMOS devices in the satellite electronic system and the design of the radiation hardening.