LD端面泵浦钾蒸气激光器阈值特性研究

Investigation on threshold characteristics of laser-diode end-pumped potassium vapor laser

  • 摘要: 基于三能级速率方程建立了端面泵浦钾蒸气激光器阈值理论计算模型,研究了半导体泵浦钾蒸气激光器阈值特性。利用模型分析了各种因素对阈值泵浦功率密度的影响,结果表明:蒸气室的温度与长度都是通过影响钾的各能级粒子数分布,进而共同影响阈值泵浦功率密度,并且存在最佳温度、最佳长度;阈值功率密度随泵浦光线宽增大基本呈线性增长;缓冲气体压强通过影响蒸气室对泵浦光的吸收效率,进而影响阈值功率密度;镀膜后高的蒸气室窗口透过率和低于70%的输出耦合率也可减小阈值泵浦功率密度。文中的工作可为实现LD泵浦钾蒸气激光输出以及实验系统的设计和优化提供参考。

     

    Abstract: Based on the three-level rate equation, a simulation model of the end-pumped K vapor laser threshold was established, and the threshold characteristics of diode pumped K vapor laser was analyzed. The influences of operation parameters on the threshold pumped power intensity were investigated, which was based on this model. The result shows that cell's temperature and length both govern the distribution of populations of K, thus combining to impact on the threshold pumped power intensity, and there exists optimal temperature and length. The threshold power intensity linearly increases with pump linewidth. The buffer gas pressure impacts on the threshold intensity by changing the cell's absorption efficiency of the pumped power. High window transmittance and less than 70% output coupling can make threshold keep in a lower level. The study for various parameters of components will provide reference for the design and optimization of the systems, and diode pumped potassium vapor laser output.

     

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