Abstract: The accelerated aging test of 60 W(CW mode) 808 nm indium-packaged conductively cooled single bar high power semiconductor laser with constant current under three different temperatures was analyzed by Weibull and Log-normal distributions models, respectively. The characteristic lifetime and statistical average lifetime of the device under all the tempertures including room temperature were calculated in Weibull distribution analysis, and it is found that for early failure test, the shape parameter is less than 1, and the calculation error of mathematical average lifetime is larger, which is not as good as statistical average lifetime. In Log-normal distribution analysis, the medium lifetime and statistical average lifetime under all the tempertures are calculated. It is found that for early failure test, the logarithmic standard deviation is larger and creates larger error of statistical average lifetime. It means that Log-normal distribution mode is not suitable for lifetime estimation of early failure device. Finally failure analysis of accelerated lifetime devices is carried out.