高重频KrF准分子激光器能量特性控制

Energy characteristics control of high-repetition frequency KrF excimer laser

  • 摘要: 能量稳定性和剂量精度是半导体光刻用高重频准分子激光器的重要指标,必须采用高精度的控制算法对其进行控制。针对准分子激光器,首先对准分子激光器的单脉冲能量特性进行了分析,并在分析的基础上建立了准分子激光器的出光能量仿真模型。然后,分别设计了能量稳定性控制算法,基于PID的双闭环剂量精度控制算法和基于决策算法的剂量精度控制算法,并通过在仿真模型上实验对于算法控制效果进行了分析,证明了基于决策算法的剂量精度控制算法的适应性更强。最后,将基于决策的控制算法在一台重频为4 kHz的KrF准分子激光器上进行了验证。该激光器在基于决策的控制算法的控制下,能量稳定性的3σ小于5%,剂量精度小于0.4%,满足半导体光刻的需求。在仿真实验和实际实验中都证明了研究中设计的能量特性控制算法的有效性。

     

    Abstract: Energy stability and dose accuracy are important indicators of high-repetition frequency excimer lasers for semiconductor lithography, which must be controlled by high-precision control algorithms. Firstly, the single-pulse energy characteristics of the excimer laser were analyzed. Based on the analysis, a simulation model of the output energy of the excimer laser was established and had been experimentally proven to be effective. Then, the energy stability control algorithm, the double closed-loop dose accuracy control algorithm based on PID and the dose accuracy control algorithm based on decision algorithm were designed respectively and the control effects of the algorithms were tested separately on the simulation model. The simulation analysis results showed that the dose accuracy control algorithm based on the decision algorithm is more adaptable. The algorithm based on decision was validated on a KrF excimer laser with a repetitive frequency of 4 kHz. Controlled by the algorithm, the 3σ of laser energy stability was less than 5% and the dose accuracy was less than 0.4%, which satisfied the requirements of semiconductor lithography. The effectiveness of the energy characteristic control algorithm in the research had been proved in both simulation and actual experiments.

     

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