许江勇, 周波, 苏安, 蒙成举, 高英俊. 左右手材料光子晶体带隙及表面波局域电场特性[J]. 红外与激光工程, 2020, 49(9): 20200052. DOI: 10.3788/IRLA20200052
引用本文: 许江勇, 周波, 苏安, 蒙成举, 高英俊. 左右手材料光子晶体带隙及表面波局域电场特性[J]. 红外与激光工程, 2020, 49(9): 20200052. DOI: 10.3788/IRLA20200052
Xu Jiangyong, Zhou Bo, Su An, Meng Chengju, Gao Yingjun. Band gap and local electric field characteristics of surface waves in left-handed and right-handed materials of photonic crystal[J]. Infrared and Laser Engineering, 2020, 49(9): 20200052. DOI: 10.3788/IRLA20200052
Citation: Xu Jiangyong, Zhou Bo, Su An, Meng Chengju, Gao Yingjun. Band gap and local electric field characteristics of surface waves in left-handed and right-handed materials of photonic crystal[J]. Infrared and Laser Engineering, 2020, 49(9): 20200052. DOI: 10.3788/IRLA20200052

左右手材料光子晶体带隙及表面波局域电场特性

Band gap and local electric field characteristics of surface waves in left-handed and right-handed materials of photonic crystal

  • 摘要: 为研究与设计新型光波导和光学传感器,通过参数匹配,并利用平面波展开的传输矩阵理论及布洛赫定理,研究左右手材料光子晶体的能带结构、表面波局域电场分布等,结果表明:零平均折射率左右材料光子晶体能带中存在的半封闭状和封闭状禁带结构,且通带中的能级曲线由高频向低频方向振荡衰减并简并。添加表面覆盖层介质后,部分半封闭状及封闭状禁带中出现正向波和反向波分立能级,分立能级随覆盖层厚度增大向波矢减小方向移动,半封闭状禁带中的分立能级在覆盖层厚度达到一定数值时出现分裂现象。禁带中正向表面波局域电场极大值均处于覆盖层与光子晶体表面交界处附近,并随覆盖层厚度增大或远离交界处而衰减,封闭状禁带对应的局域电场极大值对覆盖层厚度的响应灵敏度弱于半封闭状禁带。禁带中的反向表面波局域电场及其极大值均处于光子晶体内部,而且随覆盖层厚度增大而增强,封闭状禁带对反向表面波的局域限制作用、表面波与入射光的耦合作用、局域电场对覆盖层厚度的响应灵敏度等强于半封闭状禁带。

     

    Abstract: The energy band structure and the surface wave local electric field distribution of the left-handed and right-handed photonic crystals materials, were studied based on parameter matching by using the transmission matrix theory of plane wave and Bloch theorem in order to study and design novel optical waveguide and optical sensor. The results show that there are semi closed and closed band gap structures in the energy band of the left-handed and right-handed materials with zero mean refractive index, and the energy level curve in the transmission band attenuates from high frequency to low frequency with oscillation. After the surface coating medium is added, the discrete energy level of forward and reverse waves appear in the partially semi-closed and closed band gap of the photonic crystal, the discrete energy level moves to lower wave vector with the increase of the coating thickness, and the discrete energy level in the semi-closed band gap splits when the coating thickness is at a certain value. In the band gap, the maximum value of the local electric field of the forward surface wave and the highest light intensity are near the junction of the coating and the surface of the photonic crystal, and decay with the coating thickness increasing or away from the junction. The response sensitivity of the maximum value of the local electric field corresponding to the closed band gap to the coating thickness is weaker than that of the semi closed band gap. In the band gap, the local electric field, the maximum value of the local electric field of the reverse surface wave and the highest light intensity are in the the photonic crystal, and increase with the coating thickness. The local restriction of the closed band gap on the reverse surface wave, the coupling effect of the surface wave and the incident light, and the response sensitivity of the local electric field to the coating thickness are stronger than those of the semi-closed band gap.

     

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