Abstract: The avalanche photodiode detector based on InGaAs/InP has a working response band range of 0.9-1.67 μm, which has high detection efficiency and single photonic sensitivity in Geiger mode. By configuring different bias circuits, it can work in gating and free running mode. At present, the gating mode is mainly used, and can be applied to quantum key distribution with known arrival time of photons. In laser ranging, lidar imaging and other applications, when the arrival time of photons is unknown, the device needs to work in free running mode. Through internal integration or on-chip integration of self-quenching devices, the detector itself has the function of self-quenching or self-recovery, does not need external quenching circuit, and can work in free running mode. This greatly expands the application field of InGaAs/InP single-photonic detector, and has the advantage of fabricating single-photonic detector array at the same time. In addition, the cutoff wavelength of the detector can be further extended to 2.4 μm by using InGaAs/GaAsSb II superlattice material as the absorption layer of the avalanche photodiode. In this paper, the Geiger mode APD was introduced, and the principle and performance of the current free running mode and the extended wavelength inp based single photonic detector were described in detail.