马军. 长线列长波红外探测器共面度评估模型[J]. 红外与激光工程, 2022, 51(3): 20210276. DOI: 10.3788/IRLA20210276
引用本文: 马军. 长线列长波红外探测器共面度评估模型[J]. 红外与激光工程, 2022, 51(3): 20210276. DOI: 10.3788/IRLA20210276
Ma Jun. Coplanarity evaluation model of long linear LWIR detector[J]. Infrared and Laser Engineering, 2022, 51(3): 20210276. DOI: 10.3788/IRLA20210276
Citation: Ma Jun. Coplanarity evaluation model of long linear LWIR detector[J]. Infrared and Laser Engineering, 2022, 51(3): 20210276. DOI: 10.3788/IRLA20210276

长线列长波红外探测器共面度评估模型

Coplanarity evaluation model of long linear LWIR detector

  • 摘要: 受热应力和边界条件的影响,长线列长波红外探测器工作时会产生变形,这可能会对芯片造成损伤或使光敏面出现不共焦。对热、力耦合条件下探测器的共面度进行评估,这是长线列长波红外焦面组件设计的重要内容之一。对可能引起探测器变形的因素进行了分析,通过有限元仿真确定其中的主要因素。以这些主要因素为变量,基于层合板理论,建立了热、力耦合条件下的长线列长波红外探测器共面度评估模型。对共面度评估模型进行了误差分析,确定了其引进的误差在工程应用上可接受。使用共面度评估模型对焦面组件的结构进行了改进,通过有限元仿真和实物测试的方法对改进的有效性进行了验证。验证结果表明:结构改进后,当探测器工作时,光敏面平面度的变化量由改前的170 μm减少至10 μm,满足小于20 μm的设计要求。

     

    Abstract: Due to the influence of thermal stress and boundary conditions, the long linear long wave infrared(LWIR) detector will deform when it works, which may damage the chip or make the photosensitive surface un-confocal. The coplanarity evaluation of the detector under the condition of thermal-mechanical coupling is one of the important contents of the design of long linear LWIR FPA. The factors that may cause detector deformation were analyzed, and the main factors were identified by finite element model(FEM) simulation. Taking these main factors as variables, the coplanarity evaluation model of long linear LWIR detector which under the condition of thermal-mechanical coupling, was established based on the laminate theory. Error analysis of the coplanarity evaluation model was presented, and the error introduced by the model was acceptable in engineering. The coplanarity evaluation model was used to improve the structure of the focal plane assembly(FPA), and the effectiveness of the improvement was verified by FEM simulation and test. The verification results show that, after the structure is improved, the flatness change of photosensitive surface is reduced from 170 μm to 10 μm, which meets the design requirements of less than 20 μm.

     

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