复合激光损伤CMOS图像传感器实验研究

Experimental study on a CMOS image sensor damaged by a composite laser

  • 摘要: 激光是对抗光电侦察的有效方式。为了提高损伤效能,探索了复合激光损伤光电探测器的新思路。分别开展了波长1064 nm和532 nm、脉宽10 ns的激光及其双波长复合激光,以及波长1064 nm、脉宽0.4 ms和10 ns激光及其双脉宽复合激光对CMOS图像传感器的损伤效能实验。结果表明,双波长复合激光对CMOS造成严重损伤时的基频光能量是单独1064 nm激光的77.8%,是单独532 nm激光的62.5%;双脉宽复合激光损伤时,脉宽0.4 ms激光的能量密度降低为单独作用时的1.7%,脉宽10 ns激光的能量密度降低为单独作用时的76.4%。这一发现为多制式复合激光高效光电对抗提供了新的思路和参考。

     

    Abstract: Lasers are an effective way to counter photoelectric reconnaissance. To improve the damage efficiency, a new idea of a composite laser damage photodetector is explored. Damage efficiency experiments of a 1064 nm and 532 nm laser with a 10 ns pulse widths and its dual wavelength composite laser, 1064 nm laser with 0.4 ms and 10 ns pulse width and its dual pulse width composite laser on a CMOS image sensor were carried out respectively. The results show that when the dual-wavelength composite laser causes complete damage to the CMOS, the fundamental frequency light energy is 77.8% of the 1064 nm laser alone and 62.5% of the 532 nm laser alone; when the dual-pulse composite laser damages, the pulse width of the 0.4 ms laser is The energy density is reduced to 1.7% of the single action, and the energy density of the 10 ns pulse width laser is reduced to 76.4% of the single action. This discovery provides a new idea and reference for high efficiency optoelectronic countermeasures of multisystem composite lasers.

     

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