外延电阻淬灭型硅光电倍增器的最新研究进展

Recent research progress of silicon photomultiplier with epitaxial quenching resistor

  • 摘要: 北京师范大学新器件实验室(NDL)一直致力于研制结构紧凑、工艺相对简单的外延电阻淬灭型硅光电倍增器(silicon photomultiplier with epitaxial quenching resistor, EQR SiPM)。近期为了满足硅光电倍增器(silicon photomultiplier, SiPM)在核医学成像方面的需要,NDL通过优化器件设计和制作工艺,成功研制出微单元尺寸为15 μm、有效面积为9 mm2的EQR SiPM。相较以往同类型器件,实现了器件暗计数率(dark count rate, DCR)的进一步降低同时保持了较高的光子探测效率(photon detection efficiency, PDE),在环境温度为20 ℃、过偏压为7 V时,DCR的典型值为226 kHz/mm2、峰值PDE为46%。另外,为了进一步提升EQR SiPM的动态范围,NDL还研制出微单元尺寸为6 μm、有效面积为9 mm2、微单元数目为244720的EQR SiPM,在环境温度为20 ℃、过偏压为7 V时,DCR的典型值为240 kHz/mm2、峰值PDE为28%,其较大的动态范围特别适合高能宇宙射线的测量、强子量能器等应用。

     

    Abstract: The Novel Device Laboratory (NDL) of Beijing Normal University has been developing a silicon photomultiplier with an epitaxial quenching resistor (EQR SiPM), which has a compact structure and a relatively simple fabrication process. Recently, to meet the requirements of nuclear medicine imaging, NDL has successfully developed an EQR SiPM with a microcell size of 15 μm and an active area of 9 mm2 by optimizing the device structure and fabrication technology. Compared to previous devices of the same type, the dark count rate (DCR) of the EQR SiPM is further reduced while still maintaining high photon detection efficiency (PDE). At an ambient temperature of 20 ℃ and an operating overvoltage of 7 V, the typical DCR is 226 kHz/mm2, and the peak PDE is 46%. In addition, to further increase the dynamic range of the EQR SiPM, NDL has developed an EQR SiPM with a microcell size of 6 μm, an active area of 9 mm2 and a microcell number of 244720. At an ambient temperature of 20 ℃ and an operating overvoltage of 7 V, the typical DCR is 240 kHz/mm2, and the peak PDE is 28%. It has large dynamic range that is very suitable for the measurement of high-energy cosmic rays and other applications in hadron calorimeters.

     

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