基于宽禁带氮化物的微腔光频梳进展(特邀)

Advances in III-nitride-based microresonator optical frequency combs (Invited)

  • 摘要: 微腔光频梳在光谱测量、微波光子学、光学原子钟和相干光通信等领域具有重要的应用。宽禁带氮化物半导体材料,如氮化铝(AlN)和氮化镓(GaN)等属于非中心对称晶体,具有二阶和三阶光学非线性系数,宽带的透明窗口以及与蓝宝石衬底较高的折射率差,使其成为研究非线性光子器件的理想平台。文中介绍了氮化物微腔的特性,同时对基于氮化物微腔光梳的相关研究进展,包括AlN微腔中的宽谱光频梳产生和光学参量振荡、GaN微腔中的孤子光频梳产生等进行了介绍和展望。

     

    Abstract: Chip-scale optical frequency combs based on microresonators have great potentials in spectroscopy, microwave photonics, optical atomic clocks and coherent optical communications. The non-centrosymmetric wurtzite crystal structure of aluminum nitride (AlN) and gallium nitride (GaN) allows them to exhibit both second- and third-order nonlinear optical coefficients, together with wide transparency window and large refractive index contrast against sapphire substrate, making III-nitrides an attractive platform for nonlinear photonics. The basic properties of AlN and GaN microresonators as well as recent advances in III-nitride-based microresonator frequency combs are presented, including broadband frequency comb generation and optical parametric oscillation in AlN microresonators, and soliton microcomb generation in GaN microresonators.

     

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