Abstract: Extreme ultraviolet Lithography (EUVL) has been considered as the strong candidate for next generation commercial projection lithography to print sub -22 nm half-pitch (HP) features in microelectronics field. Performance and technology of resists is one of the key parts of EUVL. In order to improve the research work in China, recent progress of EUV resists reported in near years was reviewed. The history and current status of EUVL were introduced. EUVL' features and targets on resists were presented. EUV resist research portfolio and its classification were summarized. Composition, mechanism and performances for EUVL of representative resists were focused. Performance possibility and problems of the different resists were also analyzed;Routes in the future to improve EUVL performances for them were finally discussed.