刘晓艳, 王明甲, 郭方敏. 新原理光电探测阵列的微光响应测试研究[J]. 红外与激光工程, 2014, 43(8): 2546-2551.
引用本文: 刘晓艳, 王明甲, 郭方敏. 新原理光电探测阵列的微光响应测试研究[J]. 红外与激光工程, 2014, 43(8): 2546-2551.
Liu Xiaoyan, Wang Mingjia, Guo Fangmin. Test study on weak-light level response for new quantum effect photo-detector array[J]. Infrared and Laser Engineering, 2014, 43(8): 2546-2551.
Citation: Liu Xiaoyan, Wang Mingjia, Guo Fangmin. Test study on weak-light level response for new quantum effect photo-detector array[J]. Infrared and Laser Engineering, 2014, 43(8): 2546-2551.

新原理光电探测阵列的微光响应测试研究

Test study on weak-light level response for new quantum effect photo-detector array

  • 摘要: 针对暗电流低、灵敏度高等优点的新原理量子效应光电探测器,设计和加工了增益可调CTIA读出电路,以获得宽动态范围读出。读出电路芯片与164元量子效应光电探测器集成封装,在室温(300 K)条件下进行读出测试研究。光源采用633 nmHe-Ne激光器,直径50 m光斑聚焦照射。测试结果表明:器件偏压为-0.1 V,激光功率150 pW,积分时间78 s,响应电压55 mV,电压响应率达到3.67 E+08 V/W。根据测试结果,提出了进一步降低暗电流影响的改进测试方案。

     

    Abstract: For new quantum effects photo-detector array which has small dark current and high sensitivity, a gain adjustable readout circuit based on CTIA structure and sampling and holding circuit with correlated double sampling (CDS) technique was designed and fabricated in order to obtain a application of wide dynamic range. The 633 nm laser beam with radiation intensity tunable which is calibrated by a power meter shoots on the photo-detector cell one by one with a 50 m diameter facula. The test results show that the readout response voltage can reach to 55 mV and responsivity 3.67 E+08 V/W when biased voltage up to -3 V and radiation intensity 150 pW at 300 K and integration time 78 s. The test system is improved to reduce dark current further.

     

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