金掺杂碲镉汞外延材料生长及拉曼光谱研究

Growth and Raman spectrum of Au-doped Hg_1-xCd_xTe epitaxial crystals

摘要: 采用气相外延技术生长金掺杂的Hg1-xCdxTe 薄膜材料，通过高低温退火工艺有效控制p 型Hg1-xCdxTe 材料的电学参数，利用傅里叶光谱仪、金相显微镜以及拉曼光谱技术对薄膜材料进行表征。通过常规光伏器件的制作工艺，利用金掺杂材料初步研制了短波器件，器件性能较好黑体DP* 可达4.67E+11/(cmHz1/2W-1)。

Abstract: Au -doped Hg1-xCdxTe crystals were grown by vapor phase epitaxial method. The optical properties of Hg1-xCdxTe crystals were investigated by using Fourier transform infrared spectroscopy and Raman spectroscopy. Moreover, the surface of Hg1-xCdxTe epitaxial materials were observed by metallographic microscopy. Based on traditional photovoltaic technique, the shot-wavelength detectors were made by Au-doped Hg1-xCdxTe film materials. Performances of the detectors were favorable. The background-limited detective was 4.67E+11/(cmHz1/2W-1).