Abstract: Antimonide semiconductor lasers have a wide range of applications in the mid-infrared band. Based on the exist problems of GaSb-based material of the etching process, then the improvement was made. The hydrofluoric acid and phosphoric acid was used to make wet etching on GaSb respectively, and tartaric acid was added into the two acid-based solution to compare the effects. The experimental analysis shows that both of the two etching solution have a good etching effect on GaSb material, and the rate of corrosion is stable. The adjustments of the etching solution component can regulate the corrosion rate, and after etching, the morphology is good, and the material surface is smoothy. With the increase of the diluting ratio of the solution, the etch decline rate of hydrofluoric acid which add tartaric acid is fast then slow down, until it almost does not change any more. By adjusting the system components of Phosphate which add tartaric acid can reduce the widely exists undercut effect as well as the undercut phenomenon in the wet etching process.