基于半导体激光器的脉冲整形技术

林平; 刘百玉; 缑永胜; 白永林; 王博; 白晓红; 秦君军; 朱炳利; 杨文正; 朱少岚; 高存孝; 欧阳娴

基于半导体激光器的脉冲整形技术

1.
中国科学院西安光学精密机械研究所瞬态光学与光子技术国家重点实验室,陕西西安710119;
2.
中国科学院大学,北京100049

基金项目:

国家自然科学基金（11205238）

详细信息

作者简介:
林平（1987- ），男，硕士生，主要从事激光脉冲整形方面的研究。Email：linping@opt.ac.cn；刘百玉（1964- ），男，研究员，主要从事超快电子学方面的研究。Email：liu-baiyu@163.com

林平（1987- ），男，硕士生，主要从事激光脉冲整形方面的研究。Email：linping@opt.ac.cn；刘百玉（1964- ），男，研究员，主要从事超快电子学方面的研究。Email：liu-baiyu@163.com

中图分类号: TN249

Laser pulse shaping technology based on semiconductor laser

1.
State Key Laboratory of Transient Optics and Photonics,Xi'an Institute of Optics and Precision Mechanics,Chinese Academyof Sciences,Xi'an 710119,China;
2.
University of the Chinese Academy of Sciences,Beijing 100049,China

摘要: 论述一种新的激光脉冲整形方法-利用任意形状的整形电脉冲直接驱动半导体激光器，产生与电脉冲形状一致的激光脉冲，作为高功率激光装置的种子光源。使用GaAs 场效应管作为开关器件，使用超宽带脉冲触发场效应管产生整形电脉冲，引入阻抗渐变微带技术克服了触发脉冲损耗对级联场效应管数量限制，将整形电脉冲脉冲宽度扩展到10 ns。以整形电脉冲直接驱动半导体激光器，可产生脉宽为10 ns，时域调节精度为330 ps 的任意整形激光脉冲。
- 激光脉冲整形 /
- GaAs场效应管 /
- 开关特性 /
- 半导体激光器 /
- 阻抗渐变微带技术
Abstract: Pulse shaping technique is of great significance for high power laser facility. In this paper, a new method used in laser pulse shaping system was proposed. An arbitrary waveform generator was fabricated to generate shaping electrical pulse. GaAs Field Effect Transistor (FET) has good ability of generating voltage-controlled current and on-off characteristic, while the semiconductor laser contains direct modulate characteristic. The unit-pulse was generated based on the on-off characteristic of GaAs FET, and then the arbitrary waveform electrical pulse was generated by stacking a set of unit-pulses. Impedance tapered micro-strip line was designed to maintain the consistency of each unit-pulse. The arbitrary waveform electrical pulse was used as shaping electrical pulse to modulate the semiconductor laser directly to realize the laser pulse shaping. With this method, a laser pulse waveform was generated with duration less than 10 ns, 330 ps time-domain adjustment. The experiment results show that the shaped laser pulse is determined only by shaping electrical pulse.
- laser pulse shaping /
- GaAs FET /
- on-off characteristic /
- semiconductor laser /
- impedance tapered micro-strip

[1]	Li Dong, Liu Baiyu, Liu Jinyuan, et al. Electrical pulse shaping system on the high power laser system [J]. Acta Photonica Sinica, 2005, 34(9):1304. (in Chinese)
[2]
[3]
[4]	Xia Yuxing, Cao Xia, Xie Xinlong, et al. ICF pulse formating system based on integrated optics [J]. Progress in Physics, 1999, 19(1): 105-106. (in Chinese)
[5]	Gou Yongsheng, Liu Baiyu, Zhang Wei, et al. Electrical pulse generation technology for laser pulse shaping [J]. Infrared and Laser Engineering, 2011, 40(6): 2191-2194. (in Chinese)
[6]
[7]
[8]	Burkhart, S C, Voltage-controlled MESFET pulse shape generator[J]. ICF Quarterly Report, 1994, 4(10): 116054.
[9]	Oraizi H, Afsahi M, Transmission line modeling and numerical simulation for the analysis and optimum design of metamaterial multilayer structures [J]. Progress In Electromagnetics Research B, 2009, 14: 263-283.
[10]
[11]
[12]	Lin Z, Chu Q-X. A novel approach to the design of dualband power divider with variable power dividing ratio based on coupled-lines [J]. Progress In Electromagnetics Research, 2010, 103: 271-284.
[13]
[14]	El Mashade, Abdel Aleem. Analysis of ultrashort pulse propagation in nonlinear optical fiber [J]. Progress In Electromagnetics Research B, 2009, 12: 219-241.
[15]	Reinhold Ludwing, Pavel Bretchko. RF Circuit Design: Theory and Applications [M]. Beijing: Publishing House of Electronics Industry, 2002: 5.
[16]
[17]
[18]	Douglas Brooks. Signal Integrity Issues and Printed Circuit Board Design [M]. Beijing: Publishing House of Electronics Industry, 2011: 3.
[19]
[20]	Li Shimin, Huang Weiling. Principle and Design of Laser Device [M]. Beijing: National Defense Industry Press, 2005. (in Chinese)
[21]
[22]	Kumar M, Basu A, Koul S K. Circuit and active antennas for ultra-wide band pulse generation and transmission [J]. Progress in Electromagnetics Research B, 2010, 23: 251-272.
[23]	Liu Hui. Electrical pulse shaping system design in high power laser experiment [D]. Xi'an: Xi'an Institute of Optics and Precision Mechanics, Chinese Academy of Sciences, 2011. (in Chinese)

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基于半导体激光器的脉冲整形技术

Laser pulse shaping technology based on semiconductor laser

计量

基于半导体激光器的脉冲整形技术

1. 中国科学院西安光学精密机械研究所瞬态光学与光子技术国家重点实验室,陕西西安710119;

2. 中国科学院大学,北京100049

English Abstract

Laser pulse shaping technology based on semiconductor laser

1. State Key Laboratory of Transient Optics and Photonics,Xi'an Institute of Optics and Precision Mechanics,Chinese Academyof Sciences,Xi'an 710119,China;

2. University of the Chinese Academy of Sciences,Beijing 100049,China

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留言板

基于半导体激光器的脉冲整形技术

Laser pulse shaping technology based on semiconductor laser

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基于半导体激光器的脉冲整形技术

1. 中国科学院西安光学精密机械研究所瞬态光学与光子技术国家重点实验室,陕西西安710119; 2. 中国科学院大学,北京100049

English Abstract

Laser pulse shaping technology based on semiconductor laser

1. State Key Laboratory of Transient Optics and Photonics,Xi'an Institute of Optics and Precision Mechanics,Chinese Academyof Sciences,Xi'an 710119,China; 2. University of the Chinese Academy of Sciences,Beijing 100049,China

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目录

1. 中国科学院西安光学精密机械研究所瞬态光学与光子技术国家重点实验室,陕西西安710119;

2. 中国科学院大学,北京100049

1. State Key Laboratory of Transient Optics and Photonics,Xi'an Institute of Optics and Precision Mechanics,Chinese Academyof Sciences,Xi'an 710119,China;

2. University of the Chinese Academy of Sciences,Beijing 100049,China