Abstract: The crosstalk between the pixel units is the key parameter for the imaging quality of CMOS array detector. The mathematical analysis model of the electrical crosstalk was established in order to explore the influence of different light sources on the electrical crosstalk of CMOS. Furthermore, the characteristics of electrical crosstalk under the illumination of monochromatic light and broadband sources were also numerically simulated. The results show that, the electrical crosstalk increases with the increase of the wavelength of monochromatic light, as well as the spectrum bandwidth and the center wavelength of broadband sources. Moreover, the impact of broadband sources on the electrical crosstalk is greater than monochromatic light when their center wavelengths are the same. The electrical crosstalk for the monochromatic light with the radiation power of 600 W and the wavelength of 1 064 nm is about 50.611 mV, and the electrical crosstalk for broadband source with the spectrum bandwidth of 400 nm is about 50.914 mV in the same radiation power and wavelength. Consequently, the electrical crosstalk of broadband source increased by about 0.303 mV compared to the monochromatic light.